公开(公告)号：US20190237363A1

公开(公告)日：2019-08-01

申请号：US15882291

申请日：2018-01-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jinsheng GAO ,  Daniel JAEGER ,  Chih-Chiang CHANG ,  Michael AQUILINO ,  Patrick CARPENTER ,  Junsic HONG ,  Mitchell RUTKOWSKI ,  Haigou HUANG ,  Huy CAO

IPC: H01L21/768 ,  H01L21/28 ,  H01L29/66 ,  H01L21/311

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure.

公开(公告)号：US20200013672A1

公开(公告)日：2020-01-09

申请号：US16573209

申请日：2019-09-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jinsheng GAO ,  Daniel JAEGER ,  Chih-Chiang CHANG ,  Michael AQUILINO ,  Patrick CARPENTER ,  Junsic HONG ,  Mitchell RUTKOWSKI ,  Haigou HUANG ,  Huy CAO

IPC: H01L21/768 ,  H01L21/28 ,  H01L29/66 ,  H01L21/311

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure.