公开(公告)号：US20190057899A1

公开(公告)日：2019-02-21

申请号：US15678229

申请日：2017-08-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Haigou HUANG ,  Daniel JAEGER ,  Xusheng WU ,  Jinsheng GAO

IPC: H01L21/768 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L21/02

CPC classification number: H01L21/76832 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/76831 ,  H01L21/76895 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: A composite etch stop layer includes an oxide layer formed over a sacrificial gate structure and a nitride layer formed over the oxide layer. The oxide layer is disposed over only lower portions of the sacrificial gate structure while the nitride layer envelops the oxide layer and is disposed directly over a top surface of the sacrificial gate structure. Sensitivity of the nitride layer to oxidation, such as during the formation of an interlayer dielectric over the composite etch stop layer, is decreased by eliminating the oxide layer from upper portions of the sacrificial gate layer.

公开(公告)号：US20200013672A1

公开(公告)日：2020-01-09

申请号：US16573209

申请日：2019-09-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jinsheng GAO ,  Daniel JAEGER ,  Chih-Chiang CHANG ,  Michael AQUILINO ,  Patrick CARPENTER ,  Junsic HONG ,  Mitchell RUTKOWSKI ,  Haigou HUANG ,  Huy CAO

IPC: H01L21/768 ,  H01L21/28 ,  H01L29/66 ,  H01L21/311

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure.

公开(公告)号：US20190237363A1

公开(公告)日：2019-08-01

申请号：US15882291

申请日：2018-01-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jinsheng GAO ,  Daniel JAEGER ,  Chih-Chiang CHANG ,  Michael AQUILINO ,  Patrick CARPENTER ,  Junsic HONG ,  Mitchell RUTKOWSKI ,  Haigou HUANG ,  Huy CAO

IPC: H01L21/768 ,  H01L21/28 ,  H01L29/66 ,  H01L21/311

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure.

公开(公告)号：US20190228976A1

公开(公告)日：2019-07-25

申请号：US15876407

申请日：2018-01-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Haigou HUANG ,  Jinsheng GAO ,  Hong YU ,  Jinping LIU ,  Huang LIU

IPC: H01L21/28 ,  H01L21/8234 ,  H01L21/311 ,  H01L27/088

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to capping structures and methods of manufacture. The structure includes: a plurality of gate structures in a first location with a first density; a plurality of gate structures in a second location with a second density different than the first density; and a T-shaped capping structure protecting the plurality of gate structures in the first location and in the second location.