Exposure photolithography methods
    1.
    发明授权
    Exposure photolithography methods 有权
    曝光光刻法

    公开(公告)号:US09235119B2

    公开(公告)日:2016-01-12

    申请号:US14457149

    申请日:2014-08-12

    Abstract: A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer comprising at least one acid labile group, a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and of generating a second amount of acid upon exposure to a second dose of radiation, and a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose of radiation and of generating a second amount of base upon exposure to the second dose of radiation. The photosensitive acid generator includes (trifluoro-methylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboximide (MDT), N-hydroxy-naphthalimide dodecane sulfonate (DDSN), or a combination thereof. The photosensitive base generator includes a quaternary ammonium salt.

    Abstract translation: 一种在衬底上形成光致抗蚀剂组合物的膜并将膜的第一和第二区分别暴露于具有第一和第二图像图案的第一和第二掩模的辐射的方法。 光致抗蚀剂组合物包括包含至少一种酸不稳定基团的聚合物,当暴露于第一剂量的辐射时能够产生第一量的酸并且在暴露于第二剂量的辐射时产生第二量的酸的光敏酸产生剂 以及光敏基底产生器,其能够在暴露于第一剂量的辐射时产生第一量的碱,并且在暴露于第二剂量的辐射时产生第二量的碱。 光敏酸产生剂包括(三氟 - 甲基磺酰氧基) - 双环[2.2.1]庚-5-烯-2,3-二甲酰亚胺(MDT),N-羟基 - 萘二甲酰亚胺十二烷基磺酸盐(DDSN)或它们的组合。 感光基底发生器包括季铵盐。

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