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公开(公告)号：US09460934B2
公开(公告)日：2016-10-04
申请号：US13833317
申请日：2013-03-15
Applicant: GLOBALFOUNDRIES INC. , SHIN-ETSU Chemical Company, Ltd.
Inventor： Martin Glodde , Wu-Song Huang , Javier J. Perez , Takeshi Kinsho , Tsutomu Ogihara , Seiichiro Tachibana , Takeru Watanabe
IPC: H01L21/76 , H01L21/311 , H01L21/027 , G03F7/075 , G03F7/09
CPC classification number: H01L21/31111 , G03F7/0752 , G03F7/091 , H01L21/0276
Abstract: An silicon-containing antireflective coating (SiARC) material is applied on a substrate. The SiARC material which includes a base polymer and may include a boron silicate polymer including silsesquioxane. An etch sequence is utilized, which includes a first wet etch employing a basic solution, a second wet etch employing an acidic solution, and a third wet etch employing another basic solution. The first wet etch can be employed to break up the boron silicate polymer, and the second wet etch can remove the base polymer material, and the third wet etch can remove the residual boron silicate polymer and other residual materials. The SiARC material can be removed from a substrate employing the etch sequence, and the substrate can be reused for monitoring purposes.
Abstract translation: 将硅含抗反射涂层（SiARC）材料施加在基底上。 包括基础聚合物的SiARC材料可以包括含硅倍半硅氧烷的硼硅酸盐聚合物。 使用蚀刻序列，其包括使用碱性溶液的第一湿蚀刻，使用酸性溶液的第二湿蚀刻和使用另一种碱性溶液的第三湿蚀刻。 可以使用第一湿蚀刻来分解硼硅酸盐聚合物，并且第二湿蚀刻可以去除基础聚合物材料，并且第三湿蚀刻可以除去残留的硼硅酸盐聚合物和其它残留材料。 可以使用蚀刻顺序从衬底去除SiARC材料，并且可以将衬底重新用于监测目的。
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公开(公告)号：US09348228B2
公开(公告)日：2016-05-24
申请号：US13733182
申请日：2013-01-03
Applicant: GLOBALFOUNDRIES INC.
Inventor： Martin Glodde , Wu-Song Huang , Ratnam Sooriyakumaran
CPC classification number: G03F7/091 , G02B1/11 , G02B1/111 , G03F7/0752 , G03F7/0755
Abstract: A silicon-containing antireflective coating formulation comprising: (i) an aqueous base insoluble organosilicon component having a multiplicity of hydrocarbon groups derivatized with hydroxy groups in the absence of Si—O—C and Si—O—H moieties; (ii) a vinylether component having a multiplicity of vinylether groups; and (iii) a casting solvent. Also disclosed is a method for converting the silicon-containing antireflective coating formulation into a crosslinked silicon-containing antireflective film comprising organosilicon units interconnected by acetal or ketal groups. The method entails (a) coating a substrate with the silicon-containing antireflective coating formulation and (b) heating the coated substrate to a temperature at which crosslinking between the organosilicon silicon component and vinylether component occurs. Further disclosed is a method for patterning an antireflective coating on a substrate using the crosslinked silicon-containing antireflective film in a lithographic patterning process wherein the crosslinked silicon-containing antireflective film is situated between the substrate and a photoresist.
Abstract translation: 一种含硅抗反射涂层制剂，其包含：（i）在不存在Si-O-C和Si-O-H部分的情况下，具有多个用羟基衍生的烃基的不溶于碱的水溶性有机硅组分; （ii）具有多个乙烯基醚基团的乙烯基醚组分; 和（iii）铸塑溶剂。 还公开了一种将含硅抗反射涂料制剂转变为含有缩合缩醛交联的含硅抗反射薄膜的方法，该薄膜包含通过缩醛或缩酮基相互连接的有机硅单元。 该方法包括：（a）用含硅抗反射涂层制剂涂覆基材，和（b）将涂覆的基材加热至发生有机硅硅组分和乙烯基醚组分之间的交联的温度。 进一步公开的是一种在光刻图案化工艺中使用交联的含硅抗反射膜在基片上图案化抗反射涂层的方法，其中交联的含硅抗反射膜位于基底和光致抗蚀剂之间。
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公开(公告)号：US09465290B2
公开(公告)日：2016-10-11
申请号：US14243238
申请日：2014-04-02
Applicant: GLOBALFOUNDRIES INC.
Inventor： Wu-Song Huang , Martin Glodde , Dario L. Goldfarb , Wai-Kin Li , Sen Liu , Libor Vyklicky
CPC classification number: G03F7/0388 , G03F7/038 , G03F7/091 , G03F7/11 , H01L51/447
Abstract: A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
Abstract translation: 一种可固化液体制剂，其包含：（i）一种或多种近红外吸收聚甲炔染料; （ii）一种或多种可交联聚合物; 和（iii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。
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公开(公告)号：US09235119B2
公开(公告)日：2016-01-12
申请号：US14457149
申请日：2014-08-12
Applicant: GLOBALFOUNDRIES INC.
Inventor： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
CPC classification number: G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
Abstract: A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer comprising at least one acid labile group, a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and of generating a second amount of acid upon exposure to a second dose of radiation, and a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose of radiation and of generating a second amount of base upon exposure to the second dose of radiation. The photosensitive acid generator includes (trifluoro-methylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboximide (MDT), N-hydroxy-naphthalimide dodecane sulfonate (DDSN), or a combination thereof. The photosensitive base generator includes a quaternary ammonium salt.
Abstract translation: 一种在衬底上形成光致抗蚀剂组合物的膜并将膜的第一和第二区分别暴露于具有第一和第二图像图案的第一和第二掩模的辐射的方法。 光致抗蚀剂组合物包括包含至少一种酸不稳定基团的聚合物，当暴露于第一剂量的辐射时能够产生第一量的酸并且在暴露于第二剂量的辐射时产生第二量的酸的光敏酸产生剂 以及光敏基底产生器，其能够在暴露于第一剂量的辐射时产生第一量的碱，并且在暴露于第二剂量的辐射时产生第二量的碱。 光敏酸产生剂包括（三氟 - 甲基磺酰氧基） - 双环[2.2.1]庚-5-烯-2,3-二甲酰亚胺（MDT），N-羟基 - 萘二甲酰亚胺十二烷基磺酸盐（DDSN）或它们的组合。 感光基底发生器包括季铵盐。
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