公开(公告)号：US20150187702A1

公开(公告)日：2015-07-02

申请号：US14645598

申请日：2015-03-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Mahbub RASHED ,  Yuansheng MA ,  Irene LIN ,  Jason STEPHENS ,  Yunfei DENG ,  Lei YUAN ,  Jongwook KYE ,  Rod AUGUR ,  Shibly AHMED ,  Subramani KENGERI ,  Suresh VENKATESAN

IPC: H01L23/538 ,  H01L27/092 ,  H01L27/02 ,  H01L29/78

CPC classification number: H01L23/5386 ,  H01L21/76895 ,  H01L21/823871 ,  H01L23/5384 ,  H01L27/0207 ,  H01L27/0924 ,  H01L29/7851 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions.

Abstract translation: 公开了一种使用扩散接触结构提供MOL构造的方法。 实施例包括：在衬底中提供第一扩散区域; 经由第一光刻工艺提供第一扩散接触结构; 经由第二光刻工艺提供第二扩散接触结构; 以及将所述第一扩散接触结构耦合到所述第一扩散区和所述第二扩散接触结构。 实施例包括：在衬底中提供第二扩散区域; 在所述第一和第二扩散区之间提供扩散间隙区域; 在所述扩散间隙区域上提供所述扩散接触结构; 以及经由扩散接触结构耦合第一和第二扩散区域。

公开(公告)号：US20150311122A1

公开(公告)日：2015-10-29

申请号：US14263399

申请日：2014-04-28

Applicant: Globalfoundries Inc.

Inventor： Mahbub RASHED ,  Yunfei DENG ,  Juhan KIM ,  Jongwook KYE ,  Suresh VENKATESAN ,  Subramani KENGERI

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/66

CPC classification number: H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L27/0886

Abstract: Methods for forming abutting FinFET cells with a single dummy gate and continuous fins, and the resulting devices, are disclosed. Embodiments may include forming one or more continuous fins on a substrate, forming gates perpendicular to and over the one or more continuous fins to form a first FinFET cell and a second FinFET cell, and forming source and drain contact lines parallel to and between the gates, wherein a source contact line of the first FinFET cell is adjacent to a drain contact line of the second FinFET cell, and the source contact line and the drain contact line are on opposite sides of a gate.

Abstract translation: 公开了用于形成具有单个虚拟栅极和连续散热片的邻接FinFET单元的方法以及所得到的器件。 实施例可以包括在基板上形成一个或多个连续的翅片，形成垂直于一个或多个连续翅片上方和上方的栅极以形成第一FinFET单元和第二FinFET单元，以及形成平行于栅极和栅极之间的源极和漏极接触线 ，其中所述第一FinFET单元的源极接触线与所述第二FinFET单元的漏极接触线相邻，并且所述源极接触线和所述漏极接触线位于栅极的相对侧上。

公开(公告)号：US20130130161A1

公开(公告)日：2013-05-23

申请号：US13725191

申请日：2012-12-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yunfei DENG ,  Jongwook KYE

IPC: G03F1/00

CPC classification number: G03F1/00 ,  G03B27/42 ,  G03F7/2024 ,  H01L21/0273

Abstract: Methods are provided for fabricating a semiconductor device. One method comprises providing a first pattern having a first polygon, the first polygon having a first tonality and having a first side and a second side, the first side adjacent to a second polygon having a second tonality, and the second side adjacent to a third polygon having the second tonality, and forming a second pattern by reversing the tonality of the first pattern. The method further comprises forming a third pattern from the second pattern by converting the second polygon from the first tonality to the second tonality forming a fourth pattern from the second pattern by converting the third polygon from the first tonality to the second tonality forming a fifth pattern by reversing the tonality of the third pattern, and forming a sixth pattern by reversing the tonality of the fourth pattern.

Abstract translation: 提供了制造半导体器件的方法。 一种方法包括提供具有第一多边形的第一图案，所述第一多边形具有第一音调并且具有第一侧和第二侧，所述第一侧邻近于具有第二音调的第二多边形，并且所述第二侧相邻于第三多边形 具有第二色调的多边形，并且通过反转第一图案的色调来形成第二图案。 该方法还包括通过从第二图案将第二多边形从第一图案转换成第二色调而将第二多边形从第一色调转换成第二色调以从第二图案转换成第二色调，从第二图案形成第三图案， 通过颠倒第三图案的音调，并通过反转第四图案的音调形成第六图案。