公开(公告)号：US20180175179A1

公开(公告)日：2018-06-21

申请号：US15897820

申请日：2018-02-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Biswanath SENAPATI ,  Jagar SINGH

IPC: H01L29/735 ,  H01L29/423 ,  H01L29/417 ,  H01L29/10 ,  H01L29/08 ,  G01R31/26 ,  H01L29/06 ,  H01L27/06 ,  H01L27/02 ,  H01L21/66 ,  G01R31/28

CPC classification number: H01L29/735 ,  G01R31/2621 ,  G01R31/2884 ,  H01L22/34 ,  H01L27/0259 ,  H01L27/0623 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/1095 ,  H01L29/41708 ,  H01L29/42304

Abstract: A symmetrical lateral bipolar junction transistor (SLBJT) is provided. The SLBJT includes a p-type semiconductor substrate, a n-type well, an emitter of a SLBJT situated in the n-type well, a base of the SLBJT situated in the n-type well and spaced from the emitter by a distance on one side of the base, a collector of the SLBJT situated in the n-type well and spaced from the base by the distance on an opposite side of the base, and an electrical connection to the substrate outside the n-type well. The SLBJT is used to characterize a transistor in a circuit by electrically coupling the SLBJT to a gate of the test transistor, applying a voltage to the gate, and characterizing aspect(s) of the test transistor under the applied voltage. The SLBJT protects the gate against damage to the gate dielectric.

公开(公告)号：US20160071962A1

公开(公告)日：2016-03-10

申请号：US14476976

申请日：2014-09-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Biswanath SENAPATI ,  Jagar SINGH

IPC: H01L29/735 ,  H01L29/10 ,  H01L29/06 ,  H01L21/66 ,  H01L27/02 ,  G01R31/26 ,  G01R31/28 ,  H01L29/08 ,  H01L27/06

CPC classification number: H01L29/735 ,  G01R31/2621 ,  G01R31/2884 ,  H01L22/34 ,  H01L27/0259 ,  H01L27/0623 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/1095 ,  H01L29/41708 ,  H01L29/42304

Abstract: A symmetrical lateral bipolar junction transistor (SLBJT) is provided. The SLBJT includes a p-type semiconductor substrate, a n-type well, an emitter of a SLBJT situated in the n-type well, a base of the SLBJT situated in the n-type well and spaced from the emitter by a distance on one side of the base, a collector of the SLBJT situated in the n-type well and spaced from the base by the distance on an opposite side of the base, and an electrical connection to the substrate outside the n-type well. The SLBJT is used to characterize a transistor in a circuit by electrically coupling the SLBJT to a gate of the test transistor, applying a voltage to the gate, and characterizing aspect(s) of the test transistor under the applied voltage. The SLBJT protects the gate against damage to the gate dielectric.

Abstract translation: 提供对称的横向双极结型晶体管（SLBJT）。 SLBJT包括p型半导体衬底，n型阱，位于n型阱中的SLBJT的发射极，SLBJT的基极位于n型阱中并与发射极间隔一定距离 底座的一侧，SLBJT的收集器位于n型井中，并与基座相隔一定距离，并且与n型井外的基板电连接。 SLBJT用于通过将SLBJT电耦合到测试晶体管的栅极，向栅极施加电压，并在施加的电压下表征测试晶体管的方面来表征电路中的晶体管。 SLBJT可防止栅极损坏栅极电介质。