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    FINFET DEVICES HAVING A BODY CONTACT AND METHODS OF FORMING THE SAME
    1.
    发明申请
    FINFET DEVICES HAVING A BODY CONTACT AND METHODS OF FORMING THE SAME 有权
    具有身体接触的FINFET器件及其形成方法

    公开(公告)号：US20140264633A1

    公开(公告)日：2014-09-18

    申请号：US14176767

    申请日：2014-02-10

    Applicant: GLOBALFOUNDRIES, Inc.

    Inventor： Yanxiang Liu ,  Michael Hargrove ,  Christian Gruensfelder

    IPC: H01L29/78 ,  H01L29/66

    CPC classification number: H01L29/785 ,  H01L29/66795 ,  H01L29/7851

    Abstract: Fin field-effect transistor devices and methods of forming the fin field-effect transistor devices are provided herein. In an embodiment, a fin field-effect transistor device includes a semiconductor substrate that has a fin. A gate electrode structure overlies the fin. Source and drain halo and/or extension regions and epitaxially-grown source regions and drain regions are formed in the fin and are disposed adjacent to the gate electrode structure. A body contact is disposed on a contact surface of the fin, and the body contact is spaced separately from the halo and/or extension regions and the epitaxially-grown source regions and drain regions.

    Abstract translation: 翅片场效应晶体管器件和形成鳍式场效应晶体管器件的方法在本文中提供。 在一个实施例中，鳍状场效应晶体管器件包括具有鳍片的半导体衬底。 栅极电极结构覆盖翅片。 源极和漏极卤素和/或延伸区域和外延生长的源极区域和漏极区域形成在鳍状物中并且邻近栅电极结构设置。 体接触件设置在翅片的接触表面上，并且体接触件与卤素和/或延伸区域和外延生长的源极区域和漏极区域分开地间隔开。

    FINFET devices having a body contact and methods of forming the same
    4.
    发明授权
    FINFET devices having a body contact and methods of forming the same 有权
    具有身体接触的FINFET装置及其形成方法

    公开(公告)号：US09142674B2

    公开(公告)日：2015-09-22

    申请号：US14176767

    申请日：2014-02-10

    Applicant: GLOBALFOUNDRIES, Inc.

    Inventor： Yanxiang Liu ,  Michael Hargrove ,  Christian Gruensfelder

    IPC: H01L29/78 ,  H01L29/66

    CPC classification number: H01L29/785 ,  H01L29/66795 ,  H01L29/7851

    Abstract: Fin field-effect transistor devices and methods of forming the fin field-effect transistor devices are provided herein. In an embodiment, a fin field-effect transistor device includes a semiconductor substrate that has a fin. A gate electrode structure overlies the fin. Source and drain halo and/or extension regions and epitaxially-grown source regions and drain regions are formed in the fin and are disposed adjacent to the gate electrode structure. A body contact is disposed on a contact surface of the fin, and the body contact is spaced separately from the halo and/or extension regions and the epitaxially-grown source regions and drain regions.

    Abstract translation: 翅片场效应晶体管器件和形成鳍式场效应晶体管器件的方法在本文中提供。 在一个实施例中，鳍状场效应晶体管器件包括具有鳍片的半导体衬底。 栅极电极结构覆盖翅片。 源极和漏极卤素和/或延伸区域和外延生长的源极区域和漏极区域形成在鳍状物中并且邻近栅电极结构设置。 体接触件设置在翅片的接触表面上，并且体接触件与卤素和/或延伸区域和外延生长的源极区域和漏极区域分开地间隔开。

    Integrated circuits having FinFET semiconductor devices and methods of fabricating the same to resist sub-fin current leakage
    5.
    发明授权
    Integrated circuits having FinFET semiconductor devices and methods of fabricating the same to resist sub-fin current leakage 有权
    具有FinFET半导体器件的集成电路及其制造方法以抵抗子鳍电流泄漏

    公开(公告)号：US09472554B2

    公开(公告)日：2016-10-18

    申请号：US13955693

    申请日：2013-07-31

    Applicant: GLOBALFOUNDRIES, Inc.

    Inventor： Michael Hargrove ,  Yanxiang Liu ,  Christian Gruensfelder

    IPC: H01L21/8234 ,  H01L27/092 ,  H01L21/8238

    CPC classification number: H01L27/0924 ,  H01L21/823821

    Abstract: Integrated circuits that have a FinFET and methods of fabricating the integrated circuits are provided herein. In an embodiment, a method of fabricating an integrated circuit having a FinFET includes providing a substrate comprising fins. The fins include semiconductor material. A first metal oxide layer is formed over sidewall surfaces of the fins. The first metal oxide layer includes a first metal oxide. The first metal oxide layer is recessed to a depth below a top surface of the fins to form a recessed first metal oxide layer. The top surface and sidewall surfaces of the fins at a top portion of the fins are free from the first metal oxide layer. A gate electrode structure is formed over the top surface and sidewall surfaces of the fins at the top portion of the fins. The recessed first metal oxide layer is recessed beneath the gate electrode structure.

    Abstract translation: 本文提供了具有FinFET的集成电路和制造集成电路的方法。 在一个实施例中，制造具有FinFET的集成电路的方法包括提供包括鳍片的衬底。 翅片包括半导体材料。 在翅片的侧壁表面上形成第一金属氧化物层。 第一金属氧化物层包括第一金属氧化物。 第一金属氧化物层凹入到翅片的顶表面下方的深度以形成凹陷的第一金属氧化物层。 翅片顶部的翅片的顶表面和侧壁表面不含第一金属氧化物层。 在翅片顶部的翅片的顶表面和侧壁表面上形成栅电极结构。 凹陷的第一金属氧化物层凹陷在栅电极结构下方。

    EPITAXIALLY FORMING A SET OF FINS IN A SEMICONDUCTOR DEVICE
    6.
    发明申请
    EPITAXIALLY FORMING A SET OF FINS IN A SEMICONDUCTOR DEVICE 有权
    在半导体器件中外延形成一组FINS

    公开(公告)号：US20150221770A1

    公开(公告)日：2015-08-06

    申请号：US14686228

    申请日：2015-04-14

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Johannes M. van Meer ,  Michael J. Hargrove ,  Christian Gruensfelder ,  Yanxiang Liu ,  Srikanth B. Samavedam

    IPC: H01L29/78 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

    CPC classification number: H01L29/7856 ,  H01L21/02636 ,  H01L21/823807 ,  H01L21/823821 ,  H01L29/1608 ,  H01L29/66795 ,  H01L29/7855

    Abstract: Approaches for enabling epitaxial growth of silicon fins in a device (e.g., a fin field effect transistor device (FinFET)) are provided. Specifically, approaches are provided for forming a set of silicon fins for a FinFET device, the FinFET device comprising: a set of gate structures formed over a substrate, each of the set of gate structures including a capping layer and a set of spacers; an oxide fill formed over the set of gate structures; a set of openings formed in the device by removing the capping layer and the set of spacers from one or more of the set of gate structures; a silicon material epitaxially grown within the set of openings in the device and then planarized; and wherein the oxide fill is etched to expose the silicon material and form the set of fins.

    Abstract translation: 提供了用于在器件（例如，鳍式场效应晶体管器件（FinFET））中实现硅鳍外延生长的方法。 具体地，提供了用于形成用于FinFET器件的一组硅散热片的方法，所述FinFET器件包括：在衬底上形成的一组栅极结构，所述一组栅极结构中的每一个包括覆盖层和一组间隔物; 在该组栅极结构上形成的氧化物填充物; 通过从所述一组或多组所述栅极结构中去除所述覆盖层和所述一组间隔物而在所述器件中形成的一组开口; 外延生长在器件中的开口组内然后平坦化的硅材料; 并且其中蚀刻氧化物填充物以暴露硅材料并形成该组散热片。

    Epitaxially forming a set of fins in a semiconductor device
    7.
    发明授权
    Epitaxially forming a set of fins in a semiconductor device 有权
    在半导体器件中外延形成一组翅片

    公开(公告)号：US09034737B2

    公开(公告)日：2015-05-19

    申请号：US13956475

    申请日：2013-08-01

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Johannes M. van Meer ,  Michael J. Hargrove ,  Christian Gruensfelder ,  Yanxiang Liu ,  Srikanth B. Samavedam

    IPC: H01L21/20 ,  H01L21/36 ,  H01L21/8238 ,  H01L29/66

    CPC classification number: H01L29/7856 ,  H01L21/02636 ,  H01L21/823807 ,  H01L21/823821 ,  H01L29/1608 ,  H01L29/66795 ,  H01L29/7855

    Abstract: Approaches for enabling epitaxial growth of silicon fins in a device (e.g., a fin field effect transistor device (FinFET)) are provided. Specifically, approaches are provided for forming a set of silicon fins for a FinFET device, the FinFET device comprising: a set of gate structures formed over a substrate, each of the set of gate structures including a capping layer and a set of spacers; an oxide fill formed over the set of gate structures; a set of openings formed in the device by removing the capping layer and the set of spacers from one or more of the set of gate structures; a silicon material epitaxially grown within the set of openings in the device and then planarized; and wherein the oxide fill is etched to expose the silicon material and form the set of fins.

    Abstract translation: 提供了用于在器件（例如，鳍式场效应晶体管器件（FinFET））中实现硅鳍外延生长的方法。 具体地，提供了用于形成用于FinFET器件的一组硅散热片的方法，所述FinFET器件包括：在衬底上形成的一组栅极结构，所述一组栅极结构中的每一个包括覆盖层和一组间隔物; 在该组栅极结构上形成的氧化物填充物; 通过从所述一组或多组所述栅极结构中去除所述覆盖层和所述一组间隔物而在所述器件中形成的一组开口; 外延生长在器件中的开口组内然后平坦化的硅材料; 并且其中蚀刻氧化物填充物以暴露硅材料并形成该组散热片。

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