公开(公告)号：US10510675B2

公开(公告)日：2019-12-17

申请号：US15888366

申请日：2018-02-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Somnath Ghosh ,  Eswar Ramanathan ,  Qanit Takmeel ,  Ming He ,  Jeric Sarad ,  Ashwini Chandrashekar ,  Colin Bombardier ,  Anbu Selvam KM Mahalingam ,  Keith P. Donegan ,  Prakash Periasamy

IPC: H01L21/00 ,  H01L23/544 ,  G01N21/552 ,  G01B11/27 ,  H01L21/68

Abstract: Embodiments of the disclosure provide a substrate structure for an integrated circuit (IC) structure, including: a first dielectric layer positioned above a semiconductor substrate; a first plurality of trenches extending at least partially into the first dielectric layer from an upper surface of the first dielectric layer; and a first metal formed within the first plurality of trenches, wherein a spatial arrangement of the first plurality of trenches causes coupling of surface plasmons in the first metal to at least one wavelength of an incident light.

公开(公告)号：US20190244911A1

公开(公告)日：2019-08-08

申请号：US15888366

申请日：2018-02-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Somnath Ghosh ,  Eswar Ramanathan ,  Qanit Takmeel ,  Ming He ,  Jeric Sarad ,  Ashwini Chandrashekar ,  Colin Bombardier ,  Anbu Selvam KM Mahalingam ,  Keith P. Donegan ,  Prakash Periasamy

IPC: H01L23/544 ,  H01L21/68 ,  G01B11/27 ,  G01N21/552

Abstract: Embodiments of the disclosure provide a substrate structure for an integrated circuit (IC) structure, including: a first dielectric layer positioned above a semiconductor substrate; a first plurality of trenches extending at least partially into the first dielectric layer from an upper surface of the first dielectric layer; and a first metal formed within the first plurality of trenches, wherein a spatial arrangement of the first plurality of trenches causes coupling of surface plasmons in the first metal to at least one wavelength of an incident light.

公开(公告)号：US10199270B2

公开(公告)日：2019-02-05

申请号：US15605327

申请日：2017-05-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Colin Bombardier ,  Ming He ,  Vikrant Chauhan ,  Anbu Selvam KM Mahalingam ,  Keith Donegan

IPC: H01L21/768 ,  H01L21/66 ,  H01L23/522 ,  H01L23/528

Abstract: Interconnect structures and methods of fabricating an interconnect structure. First and second non-mandrel interconnects are formed in an interlayer dielectric layer. The first non-mandrel interconnect and the second non-mandrel interconnect have respective side surfaces that extend in a first direction. The connector interconnect extends in a second direction transverse to the first direction from the side surface of the first non-mandrel interconnect to the side surface of the second non-mandrel interconnect.

公开(公告)号：US20180342421A1

公开(公告)日：2018-11-29

申请号：US15605327

申请日：2017-05-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Colin Bombardier ,  Ming He ,  Vikrant Chauhan ,  Anbu Selvam KM Mahalingam ,  Keith Donegan

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L21/66

CPC classification number: H01L21/76897 ,  H01L21/76816 ,  H01L22/32 ,  H01L23/5226 ,  H01L23/528

Abstract: Interconnect structures and methods of fabricating an interconnect structure. First and second non-mandrel interconnects are formed in an interlayer dielectric layer. The first non-mandrel interconnect and the second non-mandrel interconnect have respective side surfaces that extend in a first direction. The connector interconnect extends in a second direction transverse to the first direction from the side surface of the first non-mandrel interconnect to the side surface of the second non-mandrel interconnect.