公开(公告)号：US09530684B2

公开(公告)日：2016-12-27

申请号：US15172366

申请日：2016-06-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Emre Alptekin ,  Viraj Yashawant Sardesai ,  Cung Do Tran ,  Reinaldo Ariel Vega

IPC: H01L31/0312 ,  H01L21/762 ,  H01L29/78 ,  H01L21/02 ,  H01L21/311 ,  H01L23/373

CPC classification number: H01L21/76224 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/02378 ,  H01L21/02527 ,  H01L21/02612 ,  H01L21/02664 ,  H01L21/31116 ,  H01L21/823431 ,  H01L21/823481 ,  H01L23/3738 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/16 ,  H01L29/785

Abstract: Embodiments of the present invention provide structures and methods for heat suppression in finFET devices. Fins are formed in a semiconductor substrate. A graphene layer is formed on a lower portion of the sidewalls of the fins. A shallow trench isolation region is disposed on the structure and covers the graphene layer, while an upper portion of the fins protrudes from the shallow trench isolation region. The graphene layer may also be deposited on a top surface of the base semiconductor substrate. The graphene serves to conduct heat away from the fins more effectively than other dielectric materials.

Abstract translation: 本发明的实施例提供了finFET器件中的热抑制的结构和方法。 翅片形成在半导体衬底中。 石墨烯层形成在翅片的侧壁的下部。 浅沟槽隔离区域设置在结构上并且覆盖石墨烯层，而翅片的上部从浅沟槽隔离区域突出。 石墨烯层也可以沉积在基底半导体衬底的顶表面上。 与其它介电材料相比，石墨烯用于将散热物从翅片导出。

公开(公告)号：US09368493B2

公开(公告)日：2016-06-14

申请号：US14325668

申请日：2014-07-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Emre Alptekin ,  Viraj Yashawant Sardesai ,  Cung Do Tran ,  Reinaldo Ariel Vega

IPC: H01L21/00 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/16 ,  H01L29/06 ,  H01L21/02 ,  H01L21/762 ,  H01L21/3065

CPC classification number: H01L21/76224 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/02378 ,  H01L21/02527 ,  H01L21/02612 ,  H01L21/02664 ,  H01L21/31116 ,  H01L21/823431 ,  H01L21/823481 ,  H01L23/3738 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/16 ,  H01L29/785

Abstract: Embodiments of the present invention provide structures and methods for heat suppression in finFET devices. Fins are formed in a semiconductor substrate. A graphene layer is formed on a lower portion of the sidewalls of the fins. A shallow trench isolation region is disposed on the structure and covers the graphene layer, while an upper portion of the fins protrudes from the shallow trench isolation region. The graphene layer may also be deposited on a top surface of the base semiconductor substrate. The graphene serves to conduct heat away from the fins more effectively than other dielectric materials.

Abstract translation: 本发明的实施例提供了finFET器件中的热抑制的结构和方法。 翅片形成在半导体衬底中。 石墨烯层形成在翅片的侧壁的下部。 浅沟槽隔离区域设置在结构上并且覆盖石墨烯层，而翅片的上部从浅沟槽隔离区域突出。 石墨烯层也可以沉积在基底半导体衬底的顶表面上。 与其它介电材料相比，石墨烯用于将散热物从翅片导出。