公开(公告)号：US20170221888A1

公开(公告)日：2017-08-03

申请号：US15010189

申请日：2016-01-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xusheng WU ,  Qizhi LIU ,  David HARAME ,  Renata Camillo-Castillo

IPC: H01L27/088 ,  H01L21/311 ,  H01L21/324 ,  H01L21/308 ,  H01L21/8234 ,  H01L21/02

CPC classification number: H01L21/324 ,  H01L21/823821 ,  H01L21/823892

Abstract: A method of making a semiconductor structure is provided including providing a plurality of fins on a semiconductor substrate; depositing a layer containing silicon dioxide on the plurality of fins and on a surface of the semiconductor substrate; depositing a photoresist layer on one or more but less than all of the plurality of fins; etching the layer of silicon dioxide off of one or more of the plurality of fins on which the photoresist layer had not been deposited; stripping the photoresist layer; depositing a layer of pure boron on one or more of the plurality of fins on which a photoresist had not been deposited; and depositing a silicon nitride liner step on the plurality of fins. A partial semiconductor device fabricated by said method is also provided.

公开(公告)号：US20170256541A1

公开(公告)日：2017-09-07

申请号：US15599751

申请日：2017-05-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xusheng WU ,  Qizhi LIU ,  David HARAME ,  Renata Camillo-Castillo

IPC: H01L27/088 ,  H01L21/308 ,  H01L21/311 ,  H01L21/324 ,  H01L21/8234 ,  H01L21/02

CPC classification number: H01L21/324 ,  H01L21/823821 ,  H01L21/823892 ,  H01L29/66803

Abstract: A method of making a semiconductor structure is provided including providing a plurality of fins on a semiconductor substrate; depositing a layer containing silicon dioxide on the plurality of fins and on a surface of the semiconductor substrate; depositing a photoresist layer on one or more but less than all of the plurality of fins; etching the layer of silicon dioxide off of one or more of the plurality of fins on which the photoresist layer had not been deposited; stripping the photoresist layer; depositing a layer of pure boron on one or more of the plurality of fins on which a photoresist had not been deposited; and depositing a silicon nitride liner step on the plurality of fins. A partial semiconductor device fabricated by said method is also provided.