公开(公告)号：US09673039B2

公开(公告)日：2017-06-06

申请号：US14666787

申请日：2015-03-24

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shishir Ray ,  Yiqun Liu ,  Jin Ping Liu ,  Fabio D'Addamio ,  Sandeep Gaan

IPC: H01L21/316 ,  H01L21/02 ,  H01L21/28 ,  C23C16/30 ,  G11C11/22 ,  H01L29/51

CPC classification number: H01L21/02181 ,  C23C16/308 ,  G11C11/22 ,  H01L21/02189 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517

Abstract: Provided is a semiconductor device that includes a semiconductor substrate and a 10 to 40 Å thick high-k dielectric layer that contains one or both of hafnium dioxide (HfO2) and zirconium dioxide (ZrO2). The high-k dielectric layer is disposed on the semiconductor substrate, and it contains at least some tetragonal phase HfO2 and/or tetragonal phase ZrO2. Also provided are methods for making the semiconductor device, and electronic devices that employ the semiconductor device.