公开(公告)号：US20160247811A1

公开(公告)日：2016-08-25

申请号：US15146201

申请日：2016-05-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Igor Lusetsky ,  Ralf van Bentum

IPC: H01L27/115 ,  H01L21/28 ,  H01L29/423

CPC classification number: H01L27/11546 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11573 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/4234 ,  H01L29/42344 ,  H01L29/66545 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

Abstract: A semiconductor structure includes a split gate nonvolatile memory cell and a high voltage transistor. The nonvolatile memory cell includes an active region, a nonvolatile memory stack provided above the active region, a control gate electrode provided above the memory stack, a select gate electrode at least partially provided above the active region adjacent to the memory stack and a select gate insulation layer. The high voltage transistor includes an active region, a gate electrode and a gate insulation layer provided between the active region and the gate electrode. The select gate insulation layer of the nonvolatile memory device and the gate insulation layer of the high voltage transistor are at least partially formed of a same high-k dielectric material. The select gate electrode of the nonvolatile memory device and the gate electrode of the high voltage transistor are at least partially formed of a same metal.

公开(公告)号：US09368605B2

公开(公告)日：2016-06-14

申请号：US14011976

申请日：2013-08-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Igor Lusetsky ,  Ralf van Bentum

IPC: H01L29/788 ,  H01L27/115 ,  H01L29/66 ,  H01L29/423 ,  H01L29/792 ,  H01L21/28

CPC classification number: H01L27/11546 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11573 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/4234 ,  H01L29/42344 ,  H01L29/66545 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

Abstract: A semiconductor structure includes a split gate nonvolatile memory cell and a high voltage transistor. The nonvolatile memory cell includes an active region, a nonvolatile memory stack provided above the active region, a control gate electrode provided above the memory stack, a select gate electrode at least partially provided above the active region adjacent to the memory stack and a select gate insulation layer. The high voltage transistor includes an active region, a gate electrode and a gate insulation layer provided between the active region and the gate electrode. The select gate insulation layer of the nonvolatile memory device and the gate insulation layer of the high voltage transistor are at least partially formed of a same high-k dielectric material. The select gate electrode of the nonvolatile memory device and the gate electrode of the high voltage transistor are at least partially formed of a same metal.

Abstract translation: 半导体结构包括分离栅极非易失性存储单元和高压晶体管。 所述非易失性存储单元包括有源区，设置在所述有源区上方的非易失性存储堆，设置在所述存储堆上方的控制栅电极，至少部分地设置在与所述存储堆叠相邻的有源区上方的选择栅电极和选择栅极 绝缘层。 高压晶体管包括有源区，栅电极和设置在有源区和栅电极之间的栅极绝缘层。 非易失性存储器件的选择栅极绝缘层和高压晶体管的栅极绝缘层至少部分地由相同的高k电介质材料形成。 非易失性存储器件的选择栅电极和高电压晶体管的栅电极至少部分地由相同的金属形成。

公开(公告)号：US20150060983A1

公开(公告)日：2015-03-05

申请号：US14011976

申请日：2013-08-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Igor Lusetsky ,  Ralf van Bentum

IPC: H01L29/788 ,  H01L29/66

CPC classification number: H01L27/11546 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11573 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/4234 ,  H01L29/42344 ,  H01L29/66545 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

Abstract: A semiconductor structure includes a split gate nonvolatile memory cell and a high voltage transistor. The nonvolatile memory cell includes an active region, a nonvolatile memory stack provided above the active region, a control gate electrode provided above the memory stack, a select gate electrode at least partially provided above the active region adjacent to the memory stack and a select gate insulation layer. The high voltage transistor includes an active region, a gate electrode and a gate insulation layer provided between the active region and the gate electrode. The select gate insulation layer of the nonvolatile memory device and the gate insulation layer of the high voltage transistor are at least partially formed of a same high-k dielectric material. The select gate electrode of the nonvolatile memory device and the gate electrode of the high voltage transistor are at least partially formed of a same metal.

Abstract translation: 半导体结构包括分离栅极非易失性存储单元和高压晶体管。 所述非易失性存储单元包括有源区，设置在所述有源区上方的非易失性存储堆，设置在所述存储堆上方的控制栅电极，至少部分地设置在与所述存储堆叠相邻的有源区上方的选择栅电极和选择栅极 绝缘层。 高压晶体管包括有源区，栅电极和设置在有源区和栅电极之间的栅极绝缘层。 非易失性存储器件的选择栅极绝缘层和高压晶体管的栅极绝缘层至少部分地由相同的高k电介质材料形成。 非易失性存储器件的选择栅电极和高电压晶体管的栅电极至少部分地由相同的金属形成。