公开(公告)号：US10373942B2

公开(公告)日：2019-08-06

申请号：US15829459

申请日：2017-12-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ram Asra ,  Mohit Bajaj ,  Edward Nowak ,  Kota V. R. M. Murali

IPC: H01L29/66 ,  H01L27/02 ,  H01L29/78 ,  H01L27/11 ,  H01L29/06 ,  H01L27/092 ,  H01L27/12 ,  H01L21/8238 ,  H01L29/423

Abstract: A method of forming a SRAM semiconductor device with reduced area layout and a resulting device are provided. Embodiments include forming a first field effect transistor (FET) over a substrate; forming an insulating material over the first FET; forming a second FET over the insulating material; and patterning the first FET, insulating material and second FET to form fins over the substrate.

公开(公告)号：US09552852B2

公开(公告)日：2017-01-24

申请号：US14534205

申请日：2014-11-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brent A. Anderson ,  Kota V. R. M. Murali ,  Edward J. Nowak

IPC: H01L45/00 ,  H01L27/105 ,  G11C7/10 ,  H01L21/768 ,  H03K5/13 ,  H01L27/24 ,  G11C7/02

CPC classification number: G11C7/106 ,  G11C7/02 ,  H01L21/76895 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H03K5/13

Abstract: Some embodiments of the present invention may include one, or more, of the following features, characteristics or advantages: (i) latch device including multiple Ecrit material regions all electrically connected to a common terminal (sometimes structured and shaped in the form of a storage plate conductor); (ii) bi-stable three-terminal latch device using two Ecrit property regions; (iii) three-terminal, two-Ecrit-region latch device where, for each Ecrit region, (Vdd−Vss) divided by (region thickness, dn) is greater than the region's Ecrit value; or (iv) use of multiple Ecrit material region latch devices to provide data storage instrumentality in a static memory device.

Abstract translation: 本发明的一些实施例可以包括以下特征，特征或优点中的一个或多个：（i）闩锁装置，包括多个Ecrit材料区域，所述Ecrit材料区域全部电连接到公共端子（有时结构化并以存储器的形式形成 板导体）; （ii）使用两个Ecrit属性区域的双稳态三端锁存装置; （iii）三端，双E区域锁存装置，其中对于每个Ecrit区域（Vdd-Vss）除以（区域厚度dn）大于该区域的Ecrit值; 或（iv）使用多个Ecrit材料区域锁存器件来在静态存储器件中提供数据存储器具。