公开(公告)号：US09812351B1

公开(公告)日：2017-11-07

申请号：US15379645

申请日：2016-12-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Nicholas Vincent Licausi ,  Guillaume Bouche ,  Lars Wolfgang Liebmann

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76816 ,  H01L23/528 ,  H01L23/5286

Abstract: A method includes patterning a 1st mandrel cell into a 1st mandrel layer disposed above a dielectric layer of a semiconductor structure. The 1st mandrel cell has 1st mandrels, 1st mandrel spaces and a mandrel cell pitch. A 2nd mandrel cell is patterned into a 2nd mandrel layer disposed above the 1st mandrel layer. The 2nd mandrel cell has 2nd mandrels, 2nd mandrel spaces, and the mandrel cell pitch. The 1st and 2nd mandrel cells are utilized to form metal line cells into the dielectric layer. The metal line cells have metal lines, spaces between the metal lines and a line cell pitch. The line cell pitch is equal to the mandrel cell pitch when the metal lines of the metal line cells are an even number. The line cell pitch is equal to half the mandrel cell pitch when the metal lines of the metal line cells are an odd number.

公开(公告)号：US10446653B2

公开(公告)日：2019-10-15

申请号：US15351893

申请日：2016-11-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Min Gyu Sung ,  Chanro Park ,  Lars Wolfgang Liebmann ,  Hoon Kim

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/772 ,  H01L29/49 ,  H01L29/78 ,  H01L21/768

Abstract: A semiconductor structure includes a semiconductor substrate, a semiconductor fin on the semiconductor substrate, a transistor integrated with the semiconductor fin at a top portion thereof, the transistor including an active region including a source, a drain and a channel region therebetween. The semiconductor structure further includes a gate structure over the channel region, the gate structure including a gate electrode, an air-gap spacer pair on opposite sidewalls of the gate electrode, and a gate contact for the gate electrode. A method of fabricating such a semiconductor device is also provided.