公开(公告)号：US09875939B1

公开(公告)日：2018-01-23

申请号：US15373129

申请日：2016-12-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yue Ke ,  Alexander Reznicek ,  Benjamin Moser ,  Dominic J. Schepis ,  Melissa A. Smith ,  Henry K. Utomo ,  Reinaldo Vega ,  Sameer Jain

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/306 ,  H01L21/324 ,  H01L21/266 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L21/823431 ,  H01L21/02532 ,  H01L21/266 ,  H01L21/30604 ,  H01L21/324 ,  H01L29/165 ,  H01L29/66795

Abstract: Methods of fabricating integrated circuit devices for forming uniform and well controlled fin recesses are disclosed. One method includes, for instance: obtaining an intermediate semiconductor structure having a substrate, at least one fin disposed on the substrate, at least one gate structure positioned over the at least one fin, and at least one oxide layer disposed on the substrate and about the at least one fin and the at least one gate structure; implanting germanium (Ge) in a first region of the at least one fin; and removing the first region of the at least one fin implanted with Ge.