公开(公告)号：US09484297B2

公开(公告)日：2016-11-01

申请号：US14656770

申请日：2015-03-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ki Young Lee ,  Moosung M. Chae ,  Woo Sik Kim

IPC: H01L27/08 ,  H01L23/522 ,  H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L49/02

CPC classification number: H01L23/5227 ,  H01L21/02126 ,  H01L21/02362 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/53295 ,  H01L28/10

Abstract: Integrated circuits with single core inductors and methods for producing them are provided. Embodiments include forming a trench in a dielectric layer; forming a first metal-oxide hard mask by disposing a metal hard mask and an oxide hard mask over the dielectric layer and in strips in the trench; forming metal line trenches through the first metal-oxide hard mask and into the first dielectric layer on opposite sides of the inductor trench and first vias; filling the first metal line trenches, first vias, and trench; forming another dielectric layer and a second metal-oxide hard mask over the filled trench; forming a second trench through the second metal-oxide hard mask and into the second dielectric layer and second metal line trenches and second vias; and filling the second metal line trenches, second vias, and second trench.

Abstract translation: 提供具有单芯电感器的集成电路及其制造方法。 实施例包括在电介质层中形成沟槽; 通过在所述电介质层上设置金属硬掩模和氧化物硬掩模，并且在所述沟槽中以条状形成第一金属氧化物硬掩模; 通过所述第一金属氧化物硬掩模形成金属线沟槽并进入所述电感器沟槽和第一通孔的相对侧上的第一介电层; 填充第一金属线沟槽，第一通孔和沟槽; 在填充的沟槽上形成另一介电层和第二金属氧化物硬掩模; 通过第二金属氧化物硬掩模形成第二沟槽并形成第二介电层和第二金属线沟槽和第二通孔; 以及填充第二金属线沟槽，第二通孔和第二沟槽。