公开(公告)号：US20210184059A1

公开(公告)日：2021-06-17

申请号：US16716419

申请日：2019-12-16

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： LANXIANG WANG ,  ENG HUAT TOH ,  SHYUE SENG TAN ,  KIOK BOONE ELGIN QUEK

IPC: H01L31/02 ,  H01L31/107 ,  H01L45/00 ,  H01L31/18

Abstract: A sensor is provided, which includes a semiconductor substrate, a photodiode region, and a multi-layered resistive element. The photodiode region is arranged in the semiconductor substrate. The multi-layered resistive element is arranged over the semiconductor substrate and is coupled with the photodiode region.

公开(公告)号：US20220293614A1

公开(公告)日：2022-09-15

申请号：US17198145

申请日：2021-03-10

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： XINSHU CAI ,  SHYUE SENG TAN ,  KIOK BOONE ELGIN QUEK

IPC: H01L27/11521 ,  H01L29/423 ,  G11C16/04 ,  H01L29/788 ,  H01L29/66

Abstract: A nonvolatile memory device is provided. The nonvolatile memory device comprises a floating gate arranged below a control gate, and between an erase gate and a word line. A first side portion of the floating gate and a second side portion of the floating gate may extend laterally beyond the control gate in substantially equal amounts. The erase gate may overhang the first side portion of the floating gate. A first control gate spacer may be arranged between the control gate and the word line. The first control gate spacer may at least partially cover a top surface of the second side portion of the floating gate.

公开(公告)号：US20200013908A1

公开(公告)日：2020-01-09

申请号：US16027363

申请日：2018-07-04

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： WANBING YI ,  JUAN BOON TAN ,  KIOK BOONE ELGIN QUEK ,  KHEE YONG LIM ,  CHIM SENG SEET ,  RAJESH NAIR

IPC: H01L31/0216 ,  H01L23/00

Abstract: A semiconductor device having a substrate with at least one photo-detecting region and at least one bond pad is provided. A first passivation layer is deposited over the substrate and over step portions at the edges of the bond pad and a trench having sidewalls and a bottom surface is formed in the substrate. A light shielding layer is deposited over the first passivation layer and covering the trench sidewalls. The light shielding layer has end portions at the photo-detecting region, at step portions at the edges of the bond pad and at the bottom surface of the trench. A second passivation layer is deposited over the light shielding layer. A third passivation layer is deposited over the end portions of the light shielding layer at the photo-detecting region and at the step portions at edges of the bond pad.

公开(公告)号：US20220059554A1

公开(公告)日：2022-02-24

申请号：US16999067

申请日：2020-08-21

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： XINSHU CAI ,  SHYUE SENG TAN ,  JUAN BOON TAN ,  KIOK BOONE ELGIN QUEK ,  ENG HUAT TOH

IPC: H01L27/11521 ,  H01L49/02 ,  H01L29/06 ,  H01L29/788 ,  H01L29/66

Abstract: A nonvolatile memory device is provided. The nonvolatile memory device comprises an active region surrounded by an isolation structure. A floating gate may be arranged over the active region, the floating gate having a first end and a second end over the isolation structure. A first doped region may be provided in the active region adjacent to a first side of the floating gate and a second doped region may be provided in the active region adjacent to a second side of the floating gate. A first capacitor may be provided over the floating gate, whereby a first electrode of the first capacitor is electrically coupled to the floating gate. A second capacitor may be provided, whereby a first electrode of the second capacitor is over the isolation structure and adjacent to the floating gate.

公开(公告)号：US20210193713A1

公开(公告)日：2021-06-24

申请号：US16721837

申请日：2019-12-19

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： KHEE YONG LIM ,  CHIA CHING YEO ,  KIOK BOONE ELGIN QUEK

IPC: H01L27/146 ,  H04N5/374 ,  H01L29/423

Abstract: An image sensor pixel comprises a semiconductor substrate and a gate having a dielectric layer with a first section and a second section over the semiconductor substrate. The first section of the dielectric layer is thinner than the second section. A photodiode is disposed substantially beneath the gate. A gate well region is disposed beneath the gate and overlying the photodiode. A first doped semiconductor region separates the gate well region from a second doped semiconductor region. The second doped semiconductor region is in the semiconductor substrate and is adjacent to the gate.

公开(公告)号：US20210066324A1

公开(公告)日：2021-03-04

申请号：US16553189

申请日：2019-08-28

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： XINSHU CAI ,  SHYUE SENG TAN ,  KIOK BOONE ELGIN QUEK ,  ENG HUAT TOH

IPC: H01L27/11524 ,  H01L27/11519

Abstract: A flash memory device is provided. The device comprises a substrate and a source region in the substrate. A first gate stack is positioned above the substrate and adjacent to the source region. A dual function gate structure having an upper portion and a lower portion is positioned above the source region. The upper portion of the dual function gate structure overlaps the first gate stack and the lower portion is adjacent to the first gate stack. A second gate is positioned above the substrate on an opposite side of the first gate stack from the dual function gate. A drain region is in the substrate adjacent to the second gate.

公开(公告)号：US20230343886A1

公开(公告)日：2023-10-26

申请号：US17659850

申请日：2022-04-20

Applicant: GlobalFoundries Singapore Pte. Ltd.

Inventor： PING ZHENG ,  ENG HUAT TOH ,  CANCAN WU ,  KIOK BOONE ELGIN QUEK

IPC: H01L31/107

CPC classification number: H01L31/1075

Abstract: The present disclosure generally relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to photodiodes such as avalanche photodiodes (APDs) and single photon avalanche diodes (SPADs).

公开(公告)号：US20210328083A1

公开(公告)日：2021-10-21

申请号：US16852551

申请日：2020-04-20

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： SANDIPTA ROY ,  KHEE YONG LIM ,  KIOK BOONE ELGIN QUEK

IPC: H01L31/0224 ,  H01L31/0216

Abstract: The present disclosure generally relates to structures and semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to optoelectronic devices having an electrode that is capable of filtering electromagnetic waves. The present disclosure provides a structure having a substrate, an optical detector upon the substrate, and an electrode upon an upper surface of the optical detector. The electrode defines at least one aperture configured to filter electromagnetic waves traversing the aperture. The optical detector is structured to detect the electromagnetic waves filtered by the aperture.

公开(公告)号：US20210257377A1

公开(公告)日：2021-08-19

申请号：US16790696

申请日：2020-02-13

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： YONGSHUN SUN ,  ENG HUAT TOH ,  SHYUE SENG TAN ,  KIOK BOONE ELGIN QUEK

IPC: H01L27/11568 ,  H01L29/423 ,  H01L29/08 ,  H01L29/06 ,  H01L29/66 ,  H01L21/28

Abstract: A memory device is provided, which includes a substrate, a first memory cell, and a second memory cell. The first memory cell is arranged over the substrate and the second memory cell is arranged adjacent to the first memory cell. The first and second memory cells include a shared doped region arranged between the first and second memory cells.