公开(公告)号：US10777734B2

公开(公告)日：2020-09-15

申请号：US16225005

申请日：2018-12-19

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Bin Liu ,  Eng Huat Toh ,  Samarth Agarwal ,  Ruchil Kumar Jain ,  Kiok Boone Elgin Quek

IPC: G11C11/00 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/12

Abstract: In a non-limiting embodiment, a magnetic memory device includes a memory component having a plurality of magnetic storage elements for storing memory data, and one or more sensor components configured to detect a magnetic field external to the memory component. The sensor component outputs a signal to one or more components of the magnetic memory device based on the detected magnetic field. The memory component is configured to be terminated when the signal is above a predetermined threshold value. In some embodiments, a magnetic field is generated in a direction opposite to the direction of the detected external magnetic field when the signal is above the predetermined threshold value.

公开(公告)号：US11211550B2

公开(公告)日：2021-12-28

申请号：US16939105

申请日：2020-07-27

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Bin Liu ,  Eng Huat Toh ,  Samarth Agarwal ,  Ruchil Kumar Jain ,  Kiok Boone Elgin Quek

IPC: G11C11/00 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/12

Abstract: In a non-limiting embodiment, a magnetic memory device includes a memory component having a plurality of magnetic storage elements for storing memory data, and one or more sensor components configured to detect a magnetic field external to the memory component. The sensor component outputs a signal to one or more components of the magnetic memory device based on the detected magnetic field. The memory component is configured to be terminated when the signal is above a predetermined threshold value. In some embodiments, a magnetic field is generated in a direction opposite to the direction of the detected external magnetic field when the signal is above the predetermined threshold value.

公开(公告)号：US10825984B1

公开(公告)日：2020-11-03

申请号：US16546844

申请日：2019-08-21

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Ping Zheng ,  Eng Huat Toh ,  Samarth Agarwal ,  Lanxiang Wang ,  Shyue Seng Tan ,  Ruchil Kumar Jain

IPC: H01L41/12 ,  G01R33/09 ,  H01L27/22 ,  H01L41/20 ,  H01L41/06 ,  H01L27/20 ,  H01L41/47 ,  G01R15/20

Abstract: Structures for a sensor and methods of forming such structures. A sensing element includes a free magnetic layer, a pinned magnetic layer, and a non-magnetic conductive spacer layer between the free magnetic layer and the pinned magnetic layer. A dummy element is positioned outside of an outer boundary of the sensing element. The dummy element is detached from the sensing element.