公开(公告)号：US12159926B2

公开(公告)日：2024-12-03

申请号：US18373598

申请日：2023-09-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Haiting Wang ,  Alexander Derrickson ,  Jagar Singh ,  Vibhor Jain ,  Andreas Knorr ,  Alexander Martin ,  Judson R. Holt ,  Zhenyu Hu

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L29/737

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.

公开(公告)号：US11810969B2

公开(公告)日：2023-11-07

申请号：US17509384

申请日：2021-10-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Haiting Wang ,  Alexander Derrickson ,  Jagar Singh ,  Vibhor Jain ,  Andreas Knorr ,  Alexander Martin ,  Judson R. Holt ,  Zhenyu Hu

IPC: H01L29/735 ,  H01L29/66 ,  H01L29/737 ,  H01L29/08 ,  H01L29/417

CPC classification number: H01L29/735 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/6625 ,  H01L29/737

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.

公开(公告)号：US11837460B2

公开(公告)日：2023-12-05

申请号：US17550835

申请日：2021-12-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jagar Singh ,  Alexander M. Derrickson ,  Alexander Martin

IPC: H01L29/735 ,  H01L29/423 ,  H01L29/08 ,  H01L29/10 ,  H01L29/45

CPC classification number: H01L29/735 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/42304 ,  H01L29/456

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base region composed of semiconductor material; an emitter region on a first side of the extrinsic base region; a collector region on a second side of the extrinsic base region; and an extrinsic base contact wrapping around the semiconductor material of the extrinsic base region.

公开(公告)号：US20240021713A1

公开(公告)日：2024-01-18

申请号：US18373598

申请日：2023-09-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Haiting Wang ,  Alexander Derrickson ,  Jagar Singh ,  Vibhor Jain ,  Andreas Knorr ,  Alexander Martin ,  Judson R. Holt ,  Zhenyu Hu

IPC: H01L29/735 ,  H01L29/66 ,  H01L29/737 ,  H01L29/08 ,  H01L29/417

CPC classification number: H01L29/735 ,  H01L29/6625 ,  H01L29/737 ,  H01L29/0808 ,  H01L29/41708 ,  H01L29/0821

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.

公开(公告)号：US20230075949A1

公开(公告)日：2023-03-09

申请号：US17550835

申请日：2021-12-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jagar Singh ,  Alexander M. Derrickson ,  Alexander Martin

IPC: H01L29/735 ,  H01L29/423 ,  H01L29/45 ,  H01L29/10 ,  H01L29/08

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base region composed of semiconductor material; an emitter region on a first side of the extrinsic base region; a collector region on a second side of the extrinsic base region; and an extrinsic base contact wrapping around the semiconductor material of the extrinsic base region.

公开(公告)号：US20230061219A1

公开(公告)日：2023-03-02

申请号：US17509384

申请日：2021-10-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Haiting Wang ,  Alexander Derrickson ,  Jagar Singh ,  Vibhor Jain ,  Andreas Knorr ,  Alexander Martin ,  Judson R. Holt ,  Zhenyu Hu

IPC: H01L29/735 ,  H01L29/66 ,  H01L29/08 ,  H01L29/417 ,  H01L29/737

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.

公开(公告)号：US11652142B2

公开(公告)日：2023-05-16

申请号：US17482374

申请日：2021-09-22

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mankyu Yang ,  Richard Taylor, III ,  Alexander Derrickson ,  Alexander Martin ,  Jagar Singh ,  Judson Robert Holt ,  Haiting Wang

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/735 ,  H01L29/10

CPC classification number: H01L29/0804 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/6625 ,  H01L29/735

Abstract: A structure for a lateral bipolar junction transistor is provided. The structure comprising an emitter including a first concentration of a first dopant. A collector including a second concentration of the first dopant, the first concentration of the first dopant may be different from the second concentration of the first dopant. An intrinsic base may be laterally arranged between the emitter and the collector, and an extrinsic base region may be above the intrinsic base. An emitter extension may be arranged adjacent to the emitter, whereby the emitter extension laterally extends under a portion of the extrinsic base region. A halo region may be arranged adjacent to the emitter extension, whereby the halo region laterally extends under another portion of the extrinsic base region.

公开(公告)号：US20210226044A1

公开(公告)日：2021-07-22

申请号：US16745833

申请日：2020-01-17

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Alexander Derrickson ,  Edmund K. Banghart ,  Alexander Martin ,  Ryan Sporer ,  Jagar Singh ,  Katherina Babich ,  George R. Mulfinger

IPC: H01L29/737 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L29/66 ,  H01L21/02 ,  H01L21/324

Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A first portion of a first semiconductor layer defines an emitter, a first portion of a second semiconductor layer defines a collector, and a base includes respective second portions of the first and second semiconductor layers that are laterally positioned between the first portion of the first semiconductor layer and the first portion of the second semiconductor layer. The first portion of the first semiconductor layer has a first thickness, and the first portion of the second semiconductor layer has a second thickness that is greater than the first thickness. The first portion and the second portion of the first semiconductor layer adjoin at a first junction having the first thickness. The first portion and the second portion of the second semiconductor layer adjoin at a second junction having the second thickness.

公开(公告)号：US11610839B2

公开(公告)日：2023-03-21

申请号：US16666808

申请日：2019-10-29

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Tung-Hsing Lee ,  Teng-Yin Lin ,  Frank W. Mont ,  Edward J. Gordon ,  Asmaa Elkadi ,  Alexander Martin ,  Won Suk Lee ,  Anvitha Shampur

IPC: H01L23/522 ,  H01L49/02 ,  H01F27/28 ,  H01F27/24 ,  H01F41/04

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to dummy fill structures and methods of manufacture. The structure includes: a passive device formed in interlevel dielectric material; and a plurality of metal dummy fill structures composed of at least one main branch and two extending legs from at least one side of the main branch, the at least two extending legs being positioned and structured to suppress eddy currents of the passive device.

公开(公告)号：US11276770B2

公开(公告)日：2022-03-15

申请号：US16674432

申请日：2019-11-05

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mankyu Yang ,  Jagar Singh ,  Alexander Martin ,  John J. Ellis-Monaghan

IPC: H01L29/735 ,  H01L29/737 ,  H01L29/06 ,  H01L29/417 ,  H01L29/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to gate controlled transistors and methods of manufacture. The structure includes: an emitter region; a collector region; base regions on opposing sides of the emitter region and the collector region; and a gate structure composed of a body region and leg regions, the body region being located between the base regions on opposing sides of the emitter region and the collector region, and the leg regions isolating the base regions from both the emitter region and the collector region.