公开(公告)号：US4311729A

公开(公告)日：1982-01-19

申请号：US116963

申请日：1980-01-30

申请人： Gen Itakura ,  Hideki Kuramitsu ,  Yamato Takada ,  Takayuki Kuroda ,  Yoshio Irie

发明人： Gen Itakura ,  Hideki Kuramitsu ,  Yamato Takada ,  Takayuki Kuroda ,  Yoshio Irie

IPC分类号： H01C7/10 ,  H01B3/00 ,  H01C7/00 ,  H01C7/102 ,  H01C17/06 ,  H01C17/30 ,  H01G4/008 ,  H01G4/01 ,  H01G4/12 ,  H01C17/18 ,  C23C3/02

CPC分类号： H01C7/102 ,  H01C17/06 ,  H01C17/30 ,  H01C7/006

摘要： Method for manufacturing a ceramic electronic component such as a voltage-dependent non-linear resistor element and a semiconductive ceramic capacitor is disclosed, in which a precisely uniform metal coating is formed on a surface of a ceramic and the metal coating is then heat treated to convert the metal of the metal coating to a metal compound to form a metal compound coating on the surface of the ceramic and/or diffuse a portion of or all of the metal coating into the ceramic, for attaining completely different electric properties than those of untreated ceramic. The present method is particularly useful in the application to a semiconductive ceramic capacitor.

摘要翻译： 公开了一种用于制造诸如电压相关的非线性电阻元件和半导体陶瓷电容器的陶瓷电子部件的方法，其中在陶瓷的表面上形成精确均匀的金属涂层，然后将金属涂层进行热处理 将金属涂层的金属转化为金属化合物以在陶瓷的表面上形成涂覆的金属化合物和/或将一部分或全部金属涂层扩散到陶瓷中，以获得与未处理的金属涂层完全不同的电性能 陶瓷。 本方法在半导体陶瓷电容器的应用中特别有用。

公开(公告)号：US4558020A

公开(公告)日：1985-12-10

申请号：US474680

申请日：1983-03-07

申请人： Gen Itakura ,  Hideki Kuramitsu ,  Takashi Iguchi ,  Takayuki Kuroda ,  Kaneomi Nagase

发明人： Gen Itakura ,  Hideki Kuramitsu ,  Takashi Iguchi ,  Takayuki Kuroda ,  Kaneomi Nagase

IPC分类号： C04B35/46 ,  C04B35/468 ,  H01B3/12 ,  H01G4/12

CPC分类号： H01G4/1227 ,  C04B35/4682

摘要： This invention relates to ceramic high dielectric composition with BaTiO.sub.3 as major component; and by containing 1-5 weight part of CaTiO.sub.3, 2-3 weight parts of Nb.sub.2 O.sub.5 to 100 weight parts of the BaTiO.sub.3, a composition having dielectric constant of 3000 or above, less voltage dependency, a large bending strength and good high frequency characteristic is provided; and it has a good characteristic when used as thin film type dielectric body like multilayered ceramic capacitor.

摘要翻译： PCT No.PCT / JP82 / 00252 Sec。 371日期1983年3月7日 102（e）1983年3月7日PCT PCT。1982年7月2日PCT公布。 出版物WO83 / 00145 日本1983年1月20日。本发明涉及以BaTiO3为主要成分的陶瓷高电介质组合物。 通过含有1-5重量份的CaTiO 3，2-3重量份的Nb 2 O 5〜100重量份的BaTiO 3，介电常数为3000以上的组成，电压依赖性低，弯曲强度大，高频特性好的特征 提供; 用作多层陶瓷电容器等薄膜型电介质时具有良好的特性。

公开(公告)号：US4461844A

公开(公告)日：1984-07-24

申请号：US483610

申请日：1983-04-11

申请人： Gen Itakura ,  Takayuki Kuroda

发明人： Gen Itakura ,  Takayuki Kuroda

IPC分类号： C04B35/46 ,  C04B35/468 ,  H01B3/12 ,  H01G4/12 ,  C04B35/50

CPC分类号： H01G4/1227 ,  C04B35/4682

摘要： A ceramic composition of a high dielectric constant is provided, which consists of 100 mol parts of barium metatitanate (BaTiO.sub.3), (2/3)(7.+-.1) mol parts of cerium dioxide, and 7.+-.1 mol parts of titanium dioxide (TiO.sub.2), and to which 0.05 to 0.2 mol part of MnO.sub.2 is added. The ceramic composition has a ceramic microstructure in which a grain size is as small as 2 to 3 .mu.m and a pore size is small to be not more than 3 .mu.m. The ceramic composition has a high dielectric constant of about 10,000, a high breakdown voltage, and little dependency on voltage. The ceramic composition is very suitable as a thin dielectric film for a laminated ceramic chip capacitor.

摘要翻译： 提供了高介电常数的陶瓷组合物，其由100摩尔偏钛酸钡（BaTiO 3），（2/3）（7 +/- 1）摩尔份二氧化铈和7 +/- 1摩尔份组成 的二氧化钛（TiO 2），并添加0.05〜0.2摩尔的MnO 2。 陶瓷组合物具有晶粒尺寸小至2μm至3μm的陶瓷微结构，孔径小至3μm以下。 陶瓷组合物具有约10,000的高介电常数，高的击穿电压，并且对电压几乎没有依赖性。 陶瓷组合物非常适合用作层压陶瓷片式电容器的薄电介质膜。

公开(公告)号：US4616289A

公开(公告)日：1986-10-07

申请号：US746011

申请日：1985-06-19

申请人： Gen Itakura ,  Tadayoshi Ushijima ,  Kenji Kusakabe ,  Takayuki Kuroda

发明人： Gen Itakura ,  Tadayoshi Ushijima ,  Kenji Kusakabe ,  Takayuki Kuroda

IPC分类号： C04B35/468 ,  H01G4/12 ,  C04B35/46

CPC分类号： C04B35/4682 ,  H01G4/1227

摘要： This invention relates to ceramic high dielectric composition with BaTiO.sub.3 as host component; and by containing 1-5 weight part of CaTiO.sub.3 and 2-3 weight parts of Ta.sub.2 O.sub.5 to 100 weight parts of the BaTiO.sub.3, a composition having dielectric constant of 3000 or above, a small voltage dependency, a large bending strength and good high frequency characteristic is provided; and it has a good characteristic when used as thin film type dielectric body like laminated ceramic capacitor.

摘要翻译： PCT No.PCT / JP82 / 00472 Sec。 371日期1983年8月17日 102（e）日期1983年8月17日PCT申请日1982年12月20日PCT公布。 出版物WO83 / 02270 日期：1983年7月7日。本发明涉及具有BaTiO 3作为主体成分的陶瓷高电介质组合物。 并且通过将100重量份的CaTiO 3和2-3重量份的Ta 2 O 5加入到100重量份的BaTiO 3中，具有3000或更高的介电常数的组合物，电压依赖性小，弯曲强度大以及良好的高频特性 被提供; 当用作薄膜型电介质体如层状陶瓷电容器时具有良好的特性。

公开(公告)号：US4143207A

公开(公告)日：1979-03-06

申请号：US759807

申请日：1977-01-17

申请人： Gen Itakura ,  Takashi Iguchi

发明人： Gen Itakura ,  Takashi Iguchi

IPC分类号： C04B35/47 ,  H01B1/08 ,  H01G4/12 ,  C04B35/46 ,  C04B35/50 ,  H01L21/38

CPC分类号： H01B1/08 ,  C04B35/47 ,  H01G4/1281 ,  Y10S428/913

摘要： A composition consisting of 5 to 95 mol% of bismuth oxide (Bi.sub.2 O.sub.3) and 95 to 5 mol% of copper oxide (Cu.sub.2 O), or a composition consisting of 50 to 95 mol% of copper oxide (Cu.sub.2 O) and 50 to 5 mol% of manganese dioxide (MnO.sub.2), or a composition consisting of 5 to 95 mol% of bismuth oxide (Bi.sub.2 O.sub.3) and 95 to 5 mol% of manganese dioxide (MnO.sub.2), is thermally diffused in the grain boundaries of semiconductor ceramics composed mainly of strontium titanate (SrTiO.sub.3) to form highly insulating layers in the grain boundaries to thereby provide semiconductive ceramics wherein the rate of change of dielectric constant with temperature as well as the dielectric loss (tan .delta.) are smaller than in the conventional barium titanate type semiconductor products. Further, the insulation resistance is higher than in the conventional product.

公开(公告)号：US6118647A

公开(公告)日：2000-09-12

申请号：US242129

申请日：1999-02-09

申请人： Hideyuki Okinaka ,  Gen Itakura ,  Yasuhiro Hioki

发明人： Hideyuki Okinaka ,  Gen Itakura ,  Yasuhiro Hioki

IPC分类号： H05K1/09 ,  H01G4/005 ,  H01G4/12 ,  H01G4/232 ,  H01G4/30 ,  H01L41/22 ,  H01G2/20 ,  H01G4/008

CPC分类号： H01G4/005 ,  H01G4/232 ,  H01G4/30 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49169

摘要： An electronic component applied to a multilayer ceramic and the like, and a manufacturing method thereof. It is aimed to eliminate a step of grinding multilayer-sintered-body that is used for coupling an inner electrode with an outer electrode, and improve electrical contact between the outer electrode and the inner electrode that is thinned in size. Vapor of material different from the inner electrode (12) is collected selectively only on an appearing end of inner electrode (12) embeded in the component during the firing, whereby conductive section (13) is formed. The conductive section is swelled to the side face of sintered body, which realizes electric contact between inner electrode (12) and outer electrode (14) readily.

摘要翻译： PCT No.PCT / JP98 / 02881 Sec。 371日期1999年2月9日 102（e）1999年2月9日PCT提交1998年6月26日PCT公布。 公开号WO99 /​​ 00808 日期1999年1月7日应用于多层陶瓷等的电子部件及其制造方法。 旨在消除用于将内部电极与外部电极耦合的多层烧结体的研磨步骤，并且改善外部电极和尺寸变薄的内部电极之间的电接触。 不同于内电极（12）的材料的蒸气被选择性地收集在烧制期间嵌入在部件中的内电极（12）的出现端上，从而形成导电部分（13）。 导电部分膨胀到烧结体的侧面，这容易实现内部电极（12）和外部电极（14）之间的电接触。

公开(公告)号：US06689311B2

公开(公告)日：2004-02-10

申请号：US09986744

申请日：2001-11-09

申请人： Kiyoyuki Morita ,  Hideyuki Okinaka ,  Gen Itakura

发明人： Kiyoyuki Morita ,  Hideyuki Okinaka ,  Gen Itakura

IPC分类号： B22F310

CPC分类号： H01G9/0029 ,  B22F3/1025 ,  B22F2998/00 ,  B22F2999/00 ,  C04B35/4682 ,  C04B35/632 ,  C04B35/63408 ,  C04B35/6342 ,  C04B35/63424 ,  C04B35/638 ,  C04B38/0645 ,  C04B2235/6581 ,  B22F7/02 ,  B22F2202/03 ,  B22F2202/01

摘要： A method for selectively and rapidly extracting/removing a plasticizer from a compact such as a green laminate that is produced at a certain point in the process of manufacturing a multilayer ceramic capacitor. Carbon dioxide is introduced into a pressure chamber in which the green laminate has been placed, and the temperature and the pressure of the pressure chamber are set to 40° C. and 10 MPa, respectively, so that the pressure chamber is filled with a supercritical carbon dioxide. The plasticizer is extracted/removed from the green laminate by using the supercritical carbon dioxide. Then, a de-binder step and a baking step are performed in an ordinary manner. By performing the de-plasticizer process of selectively extracting/removing the plasticizer before the de-binder step, it is possible to suppress the formation of a graphite-like substance even if the temperature is increased rapidly in the subsequent de-binder step and the baking step. Therefore, the manufacturing yield or the performance of the product from will not be reduced.

摘要翻译： 一种用于在制造多层陶瓷电容器的过程中在某一点产生的诸如生坯层压体的压块中选择性并快速地提取/除去增塑剂的方法。 将二氧化碳引入到其中已经放置了生坯层压体的压力室中，并且压力室的温度和压力分别设定为40℃和10MPa，使得压力室充满超临界 二氧化碳。 通过使用超临界二氧化碳从生坯层压体中提取/除去增塑剂。 然后，以常规方式进行去粘合剂步骤和烘烤步骤。 通过在去粘合剂步骤之前进行选择性提取/除去增塑剂的去增塑剂方法，即使在随后的脱粘合剂步骤中温度快速增加，也可以抑制石墨状物质的形成，并且 烘烤步骤 因此，制造产量或产品性能不会降低。

公开(公告)号：US4475091A

公开(公告)日：1984-10-02

申请号：US265707

申请日：1981-05-21

申请人： Gen Itakura ,  Yoshihiro Matsuo

发明人： Gen Itakura ,  Yoshihiro Matsuo

IPC分类号： H01G4/12 ,  C04B35/475 ,  H01C7/10 ,  H01C7/108 ,  H01G4/40 ,  H03H1/02 ,  H03H7/24

CPC分类号： H01C7/108 ,  C04B35/475

摘要： This invention relates to a composite function element which includes a high resistance thin film layer containing the constitutional elements of a perovskite type oxide and specified impurity elements at the grain boundary of a sintered body, said sintered body comprises an agglomerate of n type semiconductor particles and to a process for producing said composite function element. The composite function element has a composite function such that it acts as a varistor passing high voltages at a high voltage and as a capacitor passing the currents of abnormal frequency zone at a low voltage, so that the functions of two elements, a varistor and a capacitor, can be fulfilled simultaneously with only one element. Therefore, its extensive application in uses such as, for example, prevention of erroneous operation of microcomputer-controlled instruments can be expected.

摘要翻译： 本发明涉及一种复合功能元件，其包括含有钙钛矿型氧化物的结构元素和在烧结体的晶界处的特定杂质元素的高电阻薄膜层，所述烧结体包括n型半导体颗粒的附聚物和 涉及一种生产所述复合功能元件的方法。 复合功能元件具有复合功能，使其作为在高电压下通过高电压的压敏电阻和作为通过低电压的异常频率区域的电流的电容器，使得两个元件的功能，即压敏电阻和 电容器只能与一个元件同时完成。 因此，可以预期其在诸如例如防止微机控制的仪器的错误操作的用途中的广泛应用。

公开(公告)号：US4362637A

公开(公告)日：1982-12-07

申请号：US249885

申请日：1981-04-01

申请人： Yoshihiro Matsuo ,  Gen Itakura ,  Shoichi Ikebe ,  Tatsuya Wada

发明人： Yoshihiro Matsuo ,  Gen Itakura ,  Shoichi Ikebe ,  Tatsuya Wada

IPC分类号： C04B35/46 ,  C04B35/465 ,  C04B35/47 ,  H01B3/12 ,  H01G4/12

CPC分类号： C04B35/47 ,  C04B35/465 ,  H01B3/12 ,  H01G4/1281

摘要： Grain boundary layer dielectric ceramic compositions comprising semiconductive ceramic grains having a composition of 50.23 to 49.47 mol % of SrO and CaO, 49.72 to 50.23 mol % of TiO.sub.2, 0.05 to 0.3 mol % of Nb.sub.2 O.sub.5, substantially each of said grains being surrounded by grain boundary layer dielectric materials which are formed by grain boundary diffusion of a mixture having a composition of 93.5 to 8.5 mol % of Bi.sub.2 O.sub.3, 4.5 to 45 mol % of Cu.sub.2 O, 0.5 to 4 mol % of MnO.sub.2, 1 to 8.5 mol % of B.sub.2 O.sub.3, 0.5 to 17 mol % of La.sub.2 O.sub.3, and below 17 mol % of TiO.sub.2.These ceramic compositions provide capacitors having a temperature coefficient of capacitance less than .+-.15%, an apparent dielectric constant higher than 35,000, a dielectric loss less than 0.01 and a breakdown voltage higher than 500 V/mm; or capacitors having a temperature coefficient of capacitance less than .+-.10%, an apparent dielectric constant higher than 20,000, a dielectric loss less than 0.01 and a breakdown voltage higher than 700 V/mm; or capacitors having a temperature coefficient of capacitance less than .+-.5%, an apparent dielectric constant higher than 5,000, a dielectric loss less than 0.01 and a breakdown voltage higher than 700 V/mm.

摘要翻译： 包含组成为SrO和CaO的组成为50.23〜49.47摩尔％的二氧化铈，49.72〜50.23摩尔％的TiO 2，0.05〜0.3摩尔％的Nb 2 O 5的半导体陶瓷颗粒的晶界层介电陶瓷组合物，基本上每个所述晶粒被晶界包围 由Bi2O3为93.5〜8.5mol％，Cu2O为4.5〜45mol％，MnO2为0.5〜4mol％，B2O3为1〜8.5mol％，B2O3为0.5的混合物的晶界扩散形成的层间介电材料 至17mol％的La 2 O 3，以及低于17mol％的TiO 2。 这些陶瓷组合物提供具有小于+/- 15％的电容温度系数，高于35,000的表观介电常数，小于0.01的介电损耗和高于500V / mm的击穿电压的电容器; 或具有小于+/- 10％的电容温度系数的电容器，高于20,000的表观介电常数，小于0.01的介电损耗和高于700V / mm的击穿电压; 或具有小于+/- 5％的电容温度系数的电容器，高于5,000的表观介电常数，小于0.01的介质损耗和高于700V / mm的击穿电压。