公开(公告)号：US20150144960A1

公开(公告)日：2015-05-28

申请号：US14091622

申请日：2013-11-27

Applicant: General Electric Company

Inventor： Richard Joseph Saia ,  Stephen Daley Arthur ,  Zachary Matthew Stum ,  Roger Raymond Kovalec ,  Gregory Keith Dudoff

IPC: H01L29/49 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L29/4933 ,  H01L21/0273 ,  H01L21/049 ,  H01L21/32139 ,  H01L29/1608 ,  H01L29/42376 ,  H01L29/66068 ,  H01L29/7802

Abstract: The subject matter disclosed herein relates to metal-oxide-semiconductor (MOS) devices, such as silicon carbide (SiC) power devices (e.g., MOSFETs, IGBTs, etc.) In an embodiment, a semiconductor device includes a gate oxide layer disposed on top of a semiconductor layer. The semiconductor device also includes a gate electrode having a tapered sidewall. Further, the gate electrode includes a polysilicon layer disposed on top of the gate oxide layer and a metal silicide layer disposed on top of the polysilicon layer.

Abstract translation: 本文公开的主题涉及诸如碳化硅（SiC）功率器件（例如，MOSFET，IGBT等）的金属氧化物半导体（MOS）器件。在一个实施例中，半导体器件包括设置在 半导体层顶部。 半导体器件还包括具有锥形侧壁的栅电极。 此外，栅极包括设置在栅极氧化物层的顶部上的多晶硅层和设置在多晶硅层顶部的金属硅化物层。

公开(公告)号：US10903330B2

公开(公告)日：2021-01-26

申请号：US14091622

申请日：2013-11-27

Applicant: General Electric Company

Inventor： Richard Joseph Saia ,  Stephen Daley Arthur ,  Zachary Matthew Stum ,  Roger Raymond Kovalec ,  Gregory Keith Dudoff

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/16 ,  H01L21/04 ,  H01L21/3213 ,  H01L21/027

Abstract: The subject matter disclosed herein relates to metal-oxide-semiconductor (MOS) devices, such as silicon carbide (SiC) power devices (e.g., MOSFETs, IGBTs, etc.) In an embodiment, a semiconductor device includes a gate oxide layer disposed on top of a semiconductor layer. The semiconductor device also includes a gate electrode having a tapered sidewall. Further, the gate electrode includes a polysilicon layer disposed on top of the gate oxide layer and a metal silicide layer disposed on top of the polysilicon layer.