公开(公告)号：US4710795A

公开(公告)日：1987-12-01

申请号：US705089

申请日：1985-02-25

申请人： Georg Nippert ,  Berthold Hahn ,  Jens Gobrecht

发明人： Georg Nippert ,  Berthold Hahn ,  Jens Gobrecht

IPC分类号： H01L23/498 ,  H01L23/538 ,  H01L25/07 ,  H01L25/18 ,  H02M7/04 ,  H01L21/447 ,  H01L23/10 ,  H01L23/14 ,  H01L23/40

CPC分类号： H01L24/49 ,  H01L23/49844 ,  H01L23/5385 ,  H01L24/48 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/48465 ,  H01L2224/48491 ,  H01L2224/49051 ,  H01L2224/49107 ,  H01L2224/83136 ,  H01L2224/83815 ,  H01L2224/85181 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01076 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/15787

摘要： A semiconductor power module includes at least two mutually parallel ceramic substrates each having two sides, metallizations disposed on at least one side of each of the substrates, at least one controlled semiconductor power component disposed between each two respective substrates and contacted by the metallizations above and below the component, the substrate above the component having at least one hole formed therein above the component for accommodting control connections to the component.

摘要翻译： 半导体功率模块包括至少两个相互平行的陶瓷衬底，每个陶瓷衬底具有两个侧面，金属化层设置在每个衬底的至少一侧上，至少一个被控制的半导体功率部件设置在每个两个相应的衬底之间并且被上述金属化部分接触， 在部件下方，在部件上方具有至少一个孔的部件上方的基板，用于容纳到部件的控制连接。