公开(公告)号：US20070047599A1

公开(公告)日：2007-03-01

申请号：US11203785

申请日：2005-08-15

申请人： Gerard Wysocki ,  Frank Tittel ,  Robert Curl

发明人： Gerard Wysocki ,  Frank Tittel ,  Robert Curl

IPC分类号： H01S3/10 ,  H01S3/08

CPC分类号： H01S5/141 ,  B82Y20/00 ,  G01N21/3504 ,  G01N21/39 ,  H01S3/139 ,  H01S5/0222 ,  H01S5/02415 ,  H01S5/0617 ,  H01S5/06817 ,  H01S5/1039 ,  H01S5/3401

摘要： A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

摘要翻译： 在中红外工作的可广泛调谐的无模式跳变半导体激光器包括具有有效QCL腔长度的QCL激光器芯片，相对于所述芯片限定光栅角度和外部腔体长度的衍射光栅，以及用于 控制QCL腔长度，外腔长度和光栅角度。 2.如权利要求1所述的激光器，其特征在于，即使在没有抗反射涂层的情况下，也可以在频率范围内调节所述芯片。 衍射光栅相对于所述芯片可控制地枢转和平移，并且可以通过改变对芯片的注入电流来调节有效的QCL腔体长度。 激光可用于高分辨率光谱应用和多种痕量气体检测。 通过控制有效的QCL腔长度，外腔长度和光栅角度来避免跳频，以便复制虚拟枢轴点。

公开(公告)号：US06567153B1

公开(公告)日：2003-05-20

申请号：US09692685

申请日：2000-10-19

申请人： Michael C. Smayling ,  Frank Tittel ,  William L. Wilson, Jr.

发明人： Michael C. Smayling ,  Frank Tittel ,  William L. Wilson, Jr.

IPC分类号： G03B2742

CPC分类号： G03F7/70283 ,  G03F7/70325 ,  G03F7/70333

摘要： A multiple image photolithography system includes a radiation source (18) projecting electromagnetic radiation along a path. A reticle cartridge (26) is located in the path of the projected radiation. The cartridge (26) includes a photomask (34,36) located in the path of the projected radiation and a Fabry-Perot interferometer (54) located in the path of the projected radiation. A radiation-sensitive material (30) is located in the path of the projected radiation such that the projected radiation encounters the reticle cartridge (26) before the projected radiation encounters the radiation-sensitive material (30).

摘要翻译： 多图像光刻系统包括沿着路径投射电磁辐射的辐射源（18）。 标线盒（26）位于投影辐射的路径中。 盒（26）包括位于投影辐射的路径中的光掩模（34,36）和位于投影辐射路径中的法布里 - 珀罗干涉仪（54）。 辐射敏感材料（30）位于投影辐射的路径中，使得投射的辐射在投影辐射遇到辐射敏感材料（30）之前遇到光罩盒（26）。

公开(公告)号：US06741333B2

公开(公告)日：2004-05-25

申请号：US10406030

申请日：2003-04-02

申请人： Michael C. Smayling ,  Frank Tittel ,  William L. Wilson, Jr.

发明人： Michael C. Smayling ,  Frank Tittel ,  William L. Wilson, Jr.

IPC分类号： G03B2762

CPC分类号： G03F7/70283 ,  G03F7/70325 ,  G03F7/70333

摘要： A multiple image photolithography system includes a radiation source (18) projecting electromagnetic radiation along a path. A reticle cartridge (26) is located in the path of the projected radiation. The cartridge (26) includes a photomask (34,36) located in the path of the projected radiation and a Fabry-Perot interferometer (54) located in the path of the projected radiation. A radiation-sensitive material (30) is located in the path of the projected radiation such that the projected radiation encounters the reticle cartridge (26) before the projected radiation encounters the radiation-sensitive material (30).

摘要翻译： 多图像光刻系统包括沿着路径投射电磁辐射的辐射源（18）。 标线盒（26）位于投影辐射的路径中。 盒（26）包括位于投影辐射的路径中的光掩模（34,36）和位于投影辐射路径中的法布里 - 珀罗干涉仪（54）。 辐射敏感材料（30）位于投影辐射的路径中，使得投射的辐射在投影辐射遇到辐射敏感材料（30）之前遇到光罩盒（26）。