公开(公告)号：US20140021472A1

公开(公告)日：2014-01-23

申请号：US14110065

申请日：2012-04-05

申请人： Giso Hahn ,  Bernd Raabe ,  Stefan Braun

发明人： Giso Hahn ,  Bernd Raabe ,  Stefan Braun

IPC分类号： H01L33/48 ,  H01L33/00

CPC分类号： H01L33/48 ,  C09D11/033 ,  C09D11/037 ,  C09D11/52 ,  C09K13/02 ,  C09K13/04 ,  H01B1/22 ,  H01L31/022425 ,  H01L33/0058 ,  Y02E10/50

摘要： A printable medium is proposed, such as can be used, for example, during the production of metal contacts for silicon solar cells which are covered with a passivation layer on a surface of a silicon substrate. A corresponding production method and a correspondingly produced solar cell are also disclosed. The printable medium contains at least one medium that etches the passivation layer and metal particles such as nickel particles, for example. By locally applying the printable medium to the passivation layer and subsequent heating, the passivation layer can be opened locally with the aid of the etching medium. As a result, the nickel particles can form a mechanical and electrical contact with the substrate surface, preferably with the formation of a nickel silicide layer. The printable medium and the production method made possible therewith are cost-effective owing to the use of nickel particles, for example, and allow both good electrical contact and avoidance of undesirable high-temperature steps.

摘要翻译： 提出了一种可印刷介质，例如可以用于在硅衬底的表面上被钝化层覆盖的硅太阳能电池的制造中。 还公开了相应的生产方法和相应生产的太阳能电池。 可印刷介质包含至少一种蚀刻钝化层的介质和例如镍颗粒的金属颗粒。 通过将可印刷介质局部施加到钝化层和随后的加热，钝化层可以借助于蚀刻介质局部地打开。 结果，镍颗粒可以与衬底表面形成机械和电接触，优选地形成硅化镍层。 由于使用例如镍粒子，因此能够实现的可印刷介质和制造方法是成本有效的，并且允许良好的电接触和避免不期望的高温步骤。

公开(公告)号：US20100218826A1

公开(公告)日：2010-09-02

申请号：US12670774

申请日：2008-07-23

申请人： Giso Hahn ,  Helge Haverkamp ,  Bernd Raabe ,  Amir Dastgheib-Shirazi ,  Felix Book

发明人： Giso Hahn ,  Helge Haverkamp ,  Bernd Raabe ,  Amir Dastgheib-Shirazi ,  Felix Book

IPC分类号： H01L31/00 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： A method is presented for producing a silicon solar cell with a back-etched emitter preferably with a selective emitter and a corresponding solar cell. According to one aspect, the method comprises the following method steps: producing a two-dimensionally extending emitter at an emitter surface of a solar cell substrate; applying an etching barrier onto first partial zones of the emitter surface; etching the emitter surface in second partial zones of the emitter surface not covered by the etching barrier; removing the etching barrier; and producing metal contacts at the first partial zones. During the method, especially during the etching of the emitter surface in the second partial zones, a porous silicon layer is advantageously produced, which is then oxidised. This oxidised porous silicon layer can subsequently be etched away together with any phosphorus glass that may be present. The method makes use of conventional screen-printing and etching technologies and is thus compatible with current industrial production plants.

摘要翻译： 提出了一种用于制造具有背蚀刻发射体的硅太阳能电池的方法，优选地具有选择性发射极和相应的太阳能电池。 根据一个方面，该方法包括以下方法步骤：在太阳能电池基板的发射极表面处产生二维延伸的发射极; 在所述发射器表面的第一部分区域上施加蚀刻阻挡层; 在未被蚀刻阻挡层覆盖的发射器表面的第二部分区域中蚀刻发射体表面; 去除蚀刻屏障; 并在第一部分区域产生金属接触。 在该方法期间，特别是在蚀刻第二部分区域中的发射极表面期间，有利地产生多孔硅层，然后将其氧化。 随后可以将氧化的多孔硅层与可能存在的任何磷玻璃一起蚀刻掉。 该方法利用传统的丝网印刷和蚀刻技术，因此与目前的工业生产工厂相兼容。

公开(公告)号：US08586396B2

公开(公告)日：2013-11-19

申请号：US12670774

申请日：2008-07-23

申请人： Giso Hahn ,  Helge Haverkamp ,  Bernd Raabe ,  Amir Dastgheib-Shirazi ,  Felix Book

发明人： Giso Hahn ,  Helge Haverkamp ,  Bernd Raabe ,  Amir Dastgheib-Shirazi ,  Felix Book

IPC分类号： H01L21/00

CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： A method is presented for producing a silicon solar cell with a back-etched emitter preferably with a selective emitter and a corresponding solar cell. According to one aspect, the method comprises the following method steps: producing a two-dimensionally extending emitter at an emitter surface of a solar cell substrate; applying an etching barrier onto first partial zones of the emitter surface; etching the emitter surface in second partial zones of the emitter surface not covered by the etching barrier; removing the etching barrier; and producing metal contacts at the first partial zones. During the method, especially during the etching of the emitter surface in the second partial zones, a porous silicon layer is advantageously produced, which is then oxidized. This oxidized porous silicon layer can subsequently be etched away together with any phosphorus glass that may be present. The method makes use of conventional screen-printing and etching technologies and is thus compatible with current industrial production plants.

摘要翻译： 提出了一种用于制造具有背蚀刻发射体的硅太阳能电池的方法，优选地具有选择性发射极和相应的太阳能电池。 根据一个方面，该方法包括以下方法步骤：在太阳能电池基板的发射极表面处产生二维延伸的发射极; 在所述发射器表面的第一部分区域上施加蚀刻阻挡层; 在未被蚀刻阻挡层覆盖的发射器表面的第二部分区域中蚀刻发射体表面; 去除蚀刻屏障; 并在第一部分区域产生金属接触。 在该方法期间，特别是在蚀刻第二部分区域中的发射极表面期间，有利地产生多孔硅层，然后氧化。 随后可以将氧化的多孔硅层与可能存在的任何磷玻璃一起蚀刻掉。 该方法利用传统的丝网印刷和蚀刻技术，因此与目前的工业生产工厂相兼容。

公开(公告)号：US20100212738A1

公开(公告)日：2010-08-26

申请号：US12517502

申请日：2007-11-28

申请人： Erik Enebakk ,  Kristian Peter ,  Bernd Raabe ,  Ragnar Tronstad

发明人： Erik Enebakk ,  Kristian Peter ,  Bernd Raabe ,  Ragnar Tronstad

IPC分类号： H01L31/0368 ,  H01L29/04 ,  H01L21/322

CPC分类号： H01L21/3221 ,  H01L31/18 ,  H01L31/186 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to multicrystalline p-type silicon wafers with high lifetime. The silicon wafers contain 0.2-2.8 ppma boron and 0.06-2.8 ppma phosphorous and/or arsenic and have been subjected to phosphorous diffusion and phosphorous gettering at a temperature of above 925° C. The invention further relates to a method for production of such multicrystalline silicon wafers and to solar cells comprising such silicon wafers.

摘要翻译： 本发明涉及具有高寿命的多晶p型硅晶片。 硅晶片含有0.2-2.8ppma的硼和0.06-2.8ppma的磷和/或砷，并且已经在高于925℃的温度下进行磷扩散和磷吸收。本发明还涉及一种生产这种多晶体 硅晶片和包括这种硅晶片的太阳能电池。

公开(公告)号：US08735203B2

公开(公告)日：2014-05-27

申请号：US12517502

申请日：2007-11-28

申请人： Eric Enebakk ,  Kristian Peter ,  Bernd Raabe ,  Ragnar Tronstad

发明人： Eric Enebakk ,  Kristian Peter ,  Bernd Raabe ,  Ragnar Tronstad

IPC分类号： H01L21/225

CPC分类号： H01L21/3221 ,  H01L31/18 ,  H01L31/186 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to multicrystalline p-type silicon wafers with high lifetime. The silicon wafers contain 0.2-2.8 ppma boron and 0.06-2.8 ppma phosphorous and/or arsenic and have been subjected to phosphorous diffusion and phosphorous gettering at a temperature of above 925° C. The invention further relates to a method for production of such multicrystalline silicon wafers and to solar cells comprising such silicon wafers.

摘要翻译： 本发明涉及具有高寿命的多晶p型硅晶片。 硅晶片含有0.2-2.8ppma的硼和0.06-2.8ppma的磷和/或砷，并且已经在高于925℃的温度下进行磷扩散和磷吸收。本发明还涉及一种生产这种多晶体 硅晶片和包括这种硅晶片的太阳能电池。

公开(公告)号：US20070166569A1

公开(公告)日：2007-07-19

申请号：US10559482

申请日：2004-06-02

申请人： Hans Von Kaphengst ,  Wemer Mai ,  Bernd Raabe ,  Marco Ebbinghaus

发明人： Hans Von Kaphengst ,  Wemer Mai ,  Bernd Raabe ,  Marco Ebbinghaus

IPC分类号： B32B9/00 ,  B32B19/00

CPC分类号： C25D13/22 ,  H02M1/083 ,  H02M7/217

摘要： The invention relates to an electrophoretic dipping system comprising at least one bowl (1) which can be filled with a liquid and an object which is to be coated and which can be dipped therein. At least one power supply unit (5A, 5B, 5C) produces DC voltage with definite residual ripple from AC voltage. The one pole thereof can be connected to at least one electrode of a first polarity (3A, 3B, 3C), said electrode being arranged in the dipping bowl (1) and the other pole thereof can be connected to the object which is to be coated. The power supply unit (5A, 5B, 5C) comprises one uncontrolled diode rectifler bridge (19) and an IGBT switch (22) which comprises a controllable oscillator (24) and a power transistor (23). The controllable oscillator (24) generates pulses having a repetition frequency ranging from between 5 and 30 kHz with variable pulse widths. The power transistor (23) is controlled by said pulses. The voltage pulses produced therefrom can be smoothed out with the aid of relatively small smoothing elements until a highly reduced residual ripple which benefits the quality, especially the smoothness and the roughness of the applied protective coating is obtained. Said power supply unit (5A, 5B, 5C) also has a highly improved cos Φ compared to currently known thyristor bridge switches used for the same purpose.

摘要翻译： 本发明涉及一种电泳浸渍系统，其包括至少一个可以填充液体的碗（1）和待涂覆的物体并且可以浸入其中。 至少一个电源单元（5A，5B，5C）产生具有交流电压的明确残余纹波的直流电压。 其一极可以连接到第一极性（3A，3B，3C）的至少一个电极，所述电极布置在浸杯（1）中，并且另一个极可以连接到物体 被涂覆。 电源单元（5A，5B，5C）包括一个不受控制的二极管整流桥（19）和一个包括可控振荡器（24）和功率晶体管（23）的IGBT开关（22）。 可控振荡器（24）产生具有可变脉冲宽度在5和30kHz之间的重复频率的脉冲。 功率晶体管（23）由所述脉冲控制。 借助于相对较小的平滑元件，可以使从其产生的电压脉冲平滑，直到获得有利于质量，特别是所施加的保护涂层的平滑度和粗糙度的高度减小的残余纹波。 与目前已知的用于相同目的的晶闸管桥式开关相比，所述电源单元（5A，5B，5C）还具有高度改进的cos Phi。