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    Non-crystalline materials having complete photonic, electronic or phononic bandgaps
    3.
    发明授权
    Non-crystalline materials having complete photonic, electronic or phononic bandgaps 有权
    具有完全光子，电子或声子带隙的非结晶材料

    公开(公告)号：US09461203B2

    公开(公告)日：2016-10-04

    申请号：US14953652

    申请日：2015-11-30

    申请人： The Trustees of Princeton University

    发明人： Paul J. Steinhardt ,  Salvatore Torquato ,  Marian Florescu

    IPC分类号： H01B1/00 ,  H01B1/12 ,  H01L33/16 ,  H01L33/00 ,  C09B67/00 ,  H01C13/00 ,  G02B6/00

    CPC分类号： G02B1/005 ,  B82Y20/00 ,  G01K17/00 ,  G01L1/24 ,  G01N21/17 ,  G02B5/3025 ,  G02B6/1225 ,  G02B6/125 ,  G02B27/0012 ,  H01L33/0058 ,  H01L33/0095 ,  H01L33/16 ,  Y10T29/49993

    摘要： The invention provides an article of manufacture, and methods of designing and making the article. The article permits or prohibits waves of energy, especially photonic/electromagnetic energy, to propagate through it, depending on the energy band gaps built into it. The structure of the article may be reduced to a pattern of points having a hyperuniform distribution. The point-pattern may exhibit a crystalline symmetry, a quasicrystalline symmetry or may be aperiodic. In some embodiments, the point pattern exhibits no long-range order. Preferably, the point-pattern is isotropic. In all embodiments, the article has a complete, TE- and TM-optimized band-gap. The extraordinary transmission phenomena found in the disordered hyperuniform photonic structures of the invention find use in optical micro-circuitry (all-optical, electronic or thermal switching of the transmission), near-field optical probing, thermophotovoltaics, and energy-efficient incandescent sources.

    摘要翻译： 本发明提供了一种制造物品，以及设计和制造该物品的方法。 该文章允许或禁止能量波，特别是光子/电磁能通过它传播，这取决于内置的能量带隙。 制品的结构可以减少到具有超均匀分布的点的图案。 点图案可以呈现出结晶对称性，准晶体对称性或者可以是非周期性的。 在一些实施例中，点图案不显示长距离顺序。 优选地，点图案是各向同性的。 在所有实施例中，制品具有完整的TE和TM优化的带隙。 在本发明的无序超均匀光子结构中发现的异常传输现象发现在光学微电路（传输的全光学，电子或热交换），近场光学探测，热光伏和能量效率的白炽光源中。

    NON-CRYSTALLINE MATERIALS HAVING COMPLETE PHOTONIC, ELECTRONIC, OR PHONONIC BAND GAPS
    5.
    发明申请
    NON-CRYSTALLINE MATERIALS HAVING COMPLETE PHOTONIC, ELECTRONIC, OR PHONONIC BAND GAPS 有权
    具有完整光子，电子或PHONONIC BAND GAPS的非晶体材料

    公开(公告)号：US20120138864A1

    公开(公告)日：2012-06-07

    申请号：US13379740

    申请日：2010-06-22

    申请人： Paul J. Steinhardt ,  Salvatore Torquato ,  Marian Florescu

    发明人： Paul J. Steinhardt ,  Salvatore Torquato ,  Marian Florescu

    IPC分类号： C09K3/00 ,  B23P17/00

    CPC分类号： G02B1/005 ,  B82Y20/00 ,  G01K17/00 ,  G01L1/24 ,  G01N21/17 ,  G02B5/3025 ,  G02B6/1225 ,  G02B6/125 ,  G02B27/0012 ,  H01L33/0058 ,  H01L33/0095 ,  H01L33/16 ,  Y10T29/49993

    摘要： The invention provides an article of manufacture, and methods of designing and making the article. The article permits or prohibits waves of energy, especially photonic/electromagnetic energy, to propagate through it, depending on the energy band gaps built into it. The structure of the article may be reduced to a pattern of points having a hyperuniform distribution. The point-pattern may exhibit a crystalline symmetry, a quasicrystalline symmetry or may be aperiodic. In some embodiments, the point pattern exhibits no long-range order. Preferably, the point-pattern is isotropic. In all embodiments, the article has a complete, TE- and TM-optimized band-gap. The extraordinary transmission phenomena found in the disordered hyperuniform photonic structures of the invention find use in optical micro-circuitry (all-optical, electronic or thermal switching of the transmission), near-field optical probing, thermophotovoltaics, and energy-efficient incandescent sources.

    摘要翻译： 本发明提供了一种制造物品，以及设计和制造该物品的方法。 该文章允许或禁止能量波，特别是光子/电磁能通过它传播，这取决于内置的能量带隙。 制品的结构可以减少到具有超均匀分布的点的图案。 点图案可以呈现出结晶对称性，准晶体对称性或者可以是非周期性的。 在一些实施例中，点图案不显示长距离顺序。 优选地，点图案是各向同性的。 在所有实施例中，制品具有完整的TE和TM优化的带隙。 在本发明的无序超均匀光子结构中发现的异常传输现象发现在光学微电路（传输的全光学，电子或热交换），近场光学探测，热光伏和能量效率的白炽光源中。

    Methods for manufacturing thin film transistor
    9.
    发明授权
    Methods for manufacturing thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号：US08703560B2

    公开(公告)日：2014-04-22

    申请号：US13924741

    申请日：2013-06-24

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Hidekazu Miyairi ,  Shinya Sasagawa ,  Akihiro Ishizuka

    IPC分类号： H01L21/84

    CPC分类号： H01L29/6675 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696 ,  H01L33/0058 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias.

    摘要翻译： 本发明提供了一种制造具有少量漏电流的高可靠性半导体器件的方法。 在制造薄膜晶体管的方法中，使用抗蚀剂掩模进行蚀刻以在薄膜晶体管中形成背沟道部分，去除抗蚀剂掩模，蚀刻一部分后沟道以除去蚀刻残留物等 留在后通道部分，由此可以减少由残渣等引起的泄漏电流。 背沟道部分的蚀刻步骤可以通过使用非偏压的干蚀刻来进行。

    Method For Manufacturing A Light Emitting Diode
    10.
    发明申请
    Method For Manufacturing A Light Emitting Diode 审中-公开
    制造发光二极管的方法

    公开(公告)号：US20130260500A1

    公开(公告)日：2013-10-03

    申请号：US13992759

    申请日：2011-11-02

    申请人： Mustafa Anutgan ,  Bayram Katircioglu ,  Tamila Anutgan ,  Ismail Atilgan

    发明人： Mustafa Anutgan ,  Bayram Katircioglu ,  Tamila Anutgan ,  Ismail Atilgan

    IPC分类号： H01L33/00

    CPC分类号： H01L33/005 ,  H01L27/32 ,  H01L33/0012 ,  H01L33/0058 ,  H01L33/0095

    摘要： This invention is about a method to be used in the fabrication of an electroluminescent diode and a diode fabricated with this method. The temperatures needed for the crystalline LEDs produced presently under specified temperatures in a furnace, will be provided within the semiconductor by the Joule effect. As an alternative to the commercial LEDs, whose costs are suitable only when they are produced in the order of centimeters, our process renders the fabrication of LEDs over very large surfaces of the order of meters, with the temperature raised by applying electric current without any requirements of high temperature furnace treatments. The effects of the chemical processes experienced during the Joule heating are permanent and the diode is able to luminesce.

    摘要翻译： 本发明涉及用于制造电致发光二极管的方法和使用该方法制造的二极管。 目前在炉中规定温度下生产的晶体LED所需的温度将通过焦耳效应在半导体内提供。 作为商业LED的替代品，其成本仅在它们以厘米数量级生产时成本合适，我们的工艺使得LED在超过数量级的非常大的表面上的制造，通过施加电流而升高温度，而没有任何 高温炉处理要求。 在焦耳加热过程中经历的化学过程的影响是永久性的，二极管能够发光。