公开(公告)号：US20240145382A1

公开(公告)日：2024-05-02

申请号：US18051037

申请日：2022-10-31

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ravi P. Srivastava ,  Jagar Singh

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/00 ,  H01L23/48 ,  H01L49/02

CPC classification number: H01L23/5227 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/08 ,  H01L24/80 ,  H01L28/10 ,  H01L2224/08146 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Disclosed is a structure and a method of forming the structure. The structure includes first and second semiconductor substrates with adjacent surfaces (e.g., bonded surfaces), a first spiral-shape metallic feature in the first semiconductor substrate, and a second spiral-shaped metallic feature in the second semiconductor substrate. The second spiral-shaped metallic feature is aligned above and electrically connected to the first spiral-shaped metallic feature. In some embodiments, the second spiral-shaped metallic feature is stacked on and immediately adjacent to the first spiral-shaped metallic feature at the bonded surfaces, thereby forming a relatively large inductor with high Qdc in a relatively small area. In other embodiments, the first and second spiral-shaped metallic features are discrete inductors located on opposite sides of the semiconductor substrates from the bonded surfaces but electrically connected in parallel (e.g., using stacked TSVs), effectively forming a relatively large inductor with a high Qdc in a relatively small area.