公开(公告)号：US12278269B2

公开(公告)日：2025-04-15

申请号：US17852966

申请日：2022-06-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Uppili S. Raghunathan ,  Vibhor Jain ,  Qizhi Liu ,  Yves T. Ngu ,  Ajay Raman ,  Rajendran Krishnasamy ,  Alvin J. Joseph

IPC: H01L29/10 ,  H01L29/08

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with a stepped emitter and methods of manufacture. The structure includes: a collector; a base over the collector; and an emitter over the base, the emitter comprising at least one stepped feature over the base.

公开(公告)号：US20250120144A1

公开(公告)日：2025-04-10

申请号：US18481632

申请日：2023-10-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Uppili S. Raghunathan ,  Alexander M. Derrickson ,  Sarah A. McTaggart ,  Judson Robert Holt ,  Vibhor Jain

IPC: H01L29/10 ,  H01L29/08 ,  H01L29/66

Abstract: The disclosure provides bipolar transistor structures with a cavity below an extrinsic base, and methods to form the same. A structure of the disclosure provides a bipolar transistor structure including an extrinsic base protruding from an intrinsic base of a bipolar transistor. The extrinsic base extends over a cavity. An insulator is horizontally adjacent the cavity and below a portion of the extrinsic base. A collector extension region of the bipolar transistor structure extends laterally below the insulator and the cavity.