公开(公告)号：US11869941B2

公开(公告)日：2024-01-09

申请号：US17679166

申请日：2022-02-24

Applicant: GlobalFoundries U.S. Inc.

Inventor： Sarah A. McTaggart ,  Rajendran Krishnasamy ,  Qizhi Liu

IPC: H01L21/265 ,  H01L29/732 ,  H01L29/737 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L29/0817 ,  H01L21/26586 ,  H01L29/66272 ,  H01L29/732 ,  H01L29/7371

Abstract: Disclosed are a structure including a transistor and a method of forming the structure. The transistor includes an emitter region with first and second emitter portions. The first emitter portion extends through a dielectric layer. The second emitter portion is on the first emitter portion and the top of the dielectric layer. An additional dielectric layer covers the top of the second emitter portion. The second emitter portion and the dielectric and additional dielectric layers are wider than the first emitter portion. At least a section of the second emitter portion is narrower than the dielectric and additional dielectric layers, thereby creating cavities positioned vertically between edge portions of the dielectric and additional dielectric layers and positioned laterally adjacent to the second emitter portion. The cavities are filled with dielectric material or dielectric material blocks the side openings to the cavities creating pockets of air, of gas or under vacuum.

公开(公告)号：US20230352570A1

公开(公告)日：2023-11-02

申请号：US17733118

申请日：2022-04-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. Levy ,  Sarah A. McTaggart ,  Laura J. Silverstein ,  Qizhi Liu ,  Jason E. Stephens

IPC: H01L29/732 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/45

CPC classification number: H01L29/732 ,  H01L29/66272 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/456

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar junction transistor and methods of manufacture. The structure includes: a collector region; a base region adjacent to the collector region; an emitter region adjacent to the base region; contacts having a first material connecting to the collector region and the base region; and at least one contact having a second material connecting to the emitter region.

公开(公告)号：US20230268394A1

公开(公告)日：2023-08-24

申请号：US17679166

申请日：2022-02-24

Applicant: GlobalFoundries U.S. Inc.

Inventor： Sarah A. McTaggart ,  Rajendran Krishnasamy ,  Qizhi Liu

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/732 ,  H01L29/737 ,  H01L21/265

CPC classification number: H01L29/0817 ,  H01L29/66272 ,  H01L29/732 ,  H01L29/7371 ,  H01L21/26586

Abstract: Disclosed are a structure including a transistor and a method of forming the structure. The transistor includes an emitter region with first and second emitter portions. The first emitter portion extends through a dielectric layer. The second emitter portion is on the first emitter portion and the top of the dielectric layer. An additional dielectric layer covers the top of the second emitter portion. The second emitter portion and the dielectric and additional dielectric layers are wider than the first emitter portion. At least a section of the second emitter portion is narrower than the dielectric and additional dielectric layers, thereby creating cavities positioned vertically between edge portions of the dielectric and additional dielectric layers and positioned laterally adjacent to the second emitter portion. The cavities are filled with dielectric material or dielectric material blocks the side openings to the cavities creating pockets of air, of gas or under vacuum.

公开(公告)号：US20240178290A1

公开(公告)日：2024-05-30

申请号：US18059186

申请日：2022-11-28

Applicant: GlobalFoundries U.S. Inc.

Inventor： Megan Lydon-Nuhfer ,  Steven M. Shank ,  Aaron L. Vallett ,  Michel Abou-Khalil ,  Sarah A. McTaggart ,  Rajendran Krishnasamy

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/42376 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/4916 ,  H01L29/6653

Abstract: An integrated circuit (IC) structure includes a V-shaped cavity in a semiconductor substrate. A source region and a drain region are on opposing sides of the V-shaped cavity. A gate structure includes a gate dielectric layer, spacers, and a gate electrode on the gate dielectric layer between the spacers. The gate structure is fully within the V-shaped cavity. The IC structure provides a switch that finds advantageous application as part of a low noise amplifier. The IC structure provides a smaller gate width, decreased capacitance, increased gain and increased radio frequency (RF) performance compared to planar devices or devices without the gate structure fully within V-shaped cavity.