公开(公告)号：US20230395715A1

公开(公告)日：2023-12-07

申请号：US17830678

申请日：2022-06-02

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Haiting WANG ,  Hong YU ,  Zhenyu HU

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L29/7838 ,  H01L29/0847 ,  H01L29/785 ,  H01L29/66795

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a multi-channel replacement metal gate device and methods of manufacture. The structure includes: a fully depleted semiconductor on insulator substrate; a plurality of fin structures over the fully depleted semiconductor on insulator substrate; and a metal gate structure spanning over the plurality of fin structures and the fully depleted semiconductor on insulator substrate.

公开(公告)号：US20230299181A1

公开(公告)日：2023-09-21

申请号：US18324489

申请日：2023-05-26

Applicant: GlobalFoundries U.S. Inc.

Inventor： Haiting WANG ,  Hong YU ,  Zhenyu HU

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L29/45 ,  H01L21/285 ,  H01L29/417

CPC classification number: H01L29/6681 ,  H01L29/7851 ,  H01L29/0653 ,  H01L21/76224 ,  H01L29/45 ,  H01L21/28518 ,  H01L29/41791

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to single fin structures and methods of manufacture. The structure includes: an active single fin structure; a plurality of dummy fin structures on opposing sides of the active single fin structure; source and drain regions formed on the active single fin structure and the dummy fin structures; recessed shallow trench isolation (STI) regions between the dummy fin structures and the active single fin structure and below a surface of the dummy fin structures; and contacts formed on the source and drain regions of the active single fin structure with a spacing of at least two dummy fin structures on opposing sides of the contacts.

公开(公告)号：US20210151581A1

公开(公告)日：2021-05-20

申请号：US16688267

申请日：2019-11-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Haiting WANG ,  Hong YU ,  Zhenyu HU

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/45 ,  H01L21/285 ,  H01L21/762

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to single fin structures and methods of manufacture. The structure includes: an active single fin structure; a plurality of dummy fin structures on opposing sides of the active single fin structure; source and drain regions formed on the active single fin structure and the dummy fin structures; recessed shallow trench isolation (STI) regions between the dummy fin structures and the active single fin structure and below a surface of the dummy fin structures; and contacts formed on the source and drain regions of the active single fin structure with a spacing of at least two dummy fin structures on opposing sides of the contacts.