公开(公告)号：US08568955B2

公开(公告)日：2013-10-29

申请号：US12747652

申请日：2008-12-10

申请人： Yasushi Akiyama ,  Go Noya ,  Katsutoshi Kuramoto ,  Yusuke Takano

发明人： Yasushi Akiyama ,  Go Noya ,  Katsutoshi Kuramoto ,  Yusuke Takano

IPC分类号： G11B7/24 ,  C04B24/22

CPC分类号： G03F7/091 ,  G03F7/0046

摘要： Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorine-containing compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R1, R2, R3, and R4 represents a hydroxyl group or an alkanol group, and the others independently represent a hydrogen or an alkyl group having 1 to 10 carbon atoms; and X− represents a hydroxyl group, a halide ion or a sulfate ion], and optionally a water-soluble polymer, an acid, a surfactant and an aqueous solvent. The composition for forming a top antireflective film can exhibit the same levels of functions as those of conventional top antireflective film-forming compositions when applied in a smaller amount.

摘要翻译： 公开了一种用于形成顶部抗反射膜的组合物，其包含至少一种含氟化合物和由式（1）表示的季铵化合物[其中R 1，R 2，R 3和R 4中的至少一个表示羟基 或链烷醇基，其余独立地表示氢或碳原子数1〜10的烷基。 和X-表示羟基，卤离子或硫酸根离子]，以及任选的水溶性聚合物，酸，表面活性剂和水性溶剂。 用于形成顶部抗反射膜的组合物可以表现出与常规顶部抗反射成膜组合物相同程度的功能，当以较小的量使用时。

公开(公告)号：US20100286318A1

公开(公告)日：2010-11-11

申请号：US12747652

申请日：2008-12-10

申请人： Yasushi Akiyama ,  Go Noya ,  Katsutoshi Kuramoto ,  Yusuke Takano

发明人： Yasushi Akiyama ,  Go Noya ,  Katsutoshi Kuramoto ,  Yusuke Takano

IPC分类号： C08K5/19

CPC分类号： G03F7/091 ,  G03F7/0046

摘要： Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorine-containing compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R1, R2, R3, and R4 represents a hydroxyl group or an alkanol group, and the others independently represent a hydrogen or an alkyl group having 1 to 10 carbon atoms; and X− represents a hydroxyl group, a halide ion or a sulfate ion], and optionally a water-soluble polymer, an acid, a surfactant and an aqueous solvent. The composition for forming a top antireflective film can exhibit the same levels of functions as those of conventional top antireflective film-forming compositions when applied in a smaller amount.

摘要翻译： 公开了一种用于形成顶部抗反射膜的组合物，其包含至少一种含氟化合物和由式（1）表示的季铵化合物[其中R 1，R 2，R 3和R 4中的至少一个表示羟基 或链烷醇基，其余独立地表示氢或碳原子数1〜10的烷基。 和X-表示羟基，卤离子或硫酸根离子]，以及任选的水溶性聚合物，酸，表面活性剂和水性溶剂。 用于形成顶部抗反射膜的组合物可以表现出与常规顶部抗反射成膜组合物相同程度的功能，当以较小的量使用时。

公开(公告)号：US20100279235A1

公开(公告)日：2010-11-04

申请号：US12810028

申请日：2008-12-12

申请人： Go Noya ,  Yasushi Akiyama ,  Yusuke Takano

发明人： Go Noya ,  Yasushi Akiyama ,  Yusuke Takano

IPC分类号： G03F7/20 ,  C09D133/08

CPC分类号： G03F7/091 ,  C08F220/06 ,  C08F2220/1891 ,  G03F7/11

摘要： The present invention provides a composition for forming a top anti-reflection coating having a low refractive index, realizing a gradual swing curve and giving a small swing ratio. This composition comprises a solvent and an anthracene skeleton-containing polymer having a hydrophilic group. The composition forms an anti-reflection coating on a photoresist film, and can be used in a photolithographic process for forming a pattern by use of light having a wavelength of 160 to 260 nm.

摘要翻译： 本发明提供了一种用于形成具有低折射率的顶部抗反射涂层的组合物，实现了逐渐的摆动曲线并且产生了小的摆动比。 该组合物包含具有亲水基团的溶剂和含有蒽骨架的聚合物。 该组合物在光致抗蚀剂膜上形成抗反射涂层，并且可以用于通过使用波长为160至260nm的光形成图案的光刻工艺中。

公开(公告)号：US08501394B2

公开(公告)日：2013-08-06

申请号：US12864529

申请日：2009-01-27

申请人： Yusuke Takano ,  Jin Li ,  Tomonori Ishikawa ,  Go Noya

发明人： Yusuke Takano ,  Jin Li ,  Tomonori Ishikawa ,  Go Noya

IPC分类号： G03F7/26

CPC分类号： H01L21/0337 ,  C09D183/14 ,  C09D183/16 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0338 ,  H01L21/31144 ,  Y10T428/24479

摘要： There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity.The method comprises the steps of forming a first convex pattern, on a film to be treated, forming a spacer formed of a silazane-containing resin composition on the side wall of the convexes constituting the first convex pattern, and forming a superfine pattern using as a mask the spacer or a resin layer disposed around the spacer. The spacer is formed by curing an evenly coated resin composition only in its part around the first convex pattern. According to this method for pattern formation, unlike the conventional method, a superfine pattern can be formed.

摘要翻译： 提供了一种形成超细图案的方法，其可以简单地产生具有高质量生产率的超细图案。 该方法包括以下步骤：在待处理的膜上形成第一凸起图案，在构成第一凸起图案的凸起的侧壁上形成由含硅氮烷的树脂组合物形成的间隔物，并使用如下方式形成超细图案 掩模隔离物或设置在间隔物周围的树脂层。 间隔物通过仅在其第一凸起图案周围的部分固化均匀涂覆的树脂组合物而形成。 根据这种图案形成方法，与传统方法不同，可以形成超细纹图案。

公开(公告)号：US20100308015A1

公开(公告)日：2010-12-09

申请号：US12864529

申请日：2009-01-27

申请人： Yusuke Takano ,  Jin Li ,  Tomonori Ishikawa ,  Go Noya

发明人： Yusuke Takano ,  Jin Li ,  Tomonori Ishikawa ,  Go Noya

IPC分类号： C23F1/00 ,  B32B3/30 ,  B05D3/10

CPC分类号： H01L21/0337 ,  C09D183/14 ,  C09D183/16 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0338 ,  H01L21/31144 ,  Y10T428/24479

摘要： There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity.The method comprises the steps of forming a first convex pattern, on a film to be treated, forming a spacer formed of a silazane-containing resin composition on the side wall of the convexes constituting the first convex pattern, and forming a superfine pattern using as a mask the spacer or a resin layer disposed around the spacer. The spacer is formed by curing an evenly coated resin composition only in its part around the first convex pattern. According to this method for pattern formation, unlike the conventional method, a superfine pattern can be formed.

摘要翻译： 提供了一种形成超细图案的方法，其可以简单地产生具有高质量生产率的超细图案。 该方法包括以下步骤：在待处理的膜上形成第一凸起图案，在构成第一凸起图案的凸起的侧壁上形成由含硅氮烷的树脂组合物形成的间隔物，并使用如下方式形成超细图案 掩模隔离物或设置在间隔物周围的树脂层。 间隔物通过仅在其第一凸起图案周围的部分固化均匀涂覆的树脂组合物而形成。 根据这种图案形成方法，与传统方法不同，可以形成超细纹图案。

公开(公告)号：US20070238048A1

公开(公告)日：2007-10-11

申请号：US11630411

申请日：2005-06-29

申请人： Jirou Matsuo ,  Kiyofumi Takano ,  Yusuke Takano ,  Yasushi Akiyama

发明人： Jirou Matsuo ,  Kiyofumi Takano ,  Yusuke Takano ,  Yasushi Akiyama

IPC分类号： G03F7/11 ,  H01L21/027

CPC分类号： G03F7/091 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/11 ,  Y10S438/952

摘要： The object of the present invention is to provide an anti-reflective coating composition having excellent coating properties while maintaining performance as an anti-reflective film. An anti-reflective coating composition comprising at least the following components (A), (B), (C), (D), and (E) and a production method for a pattern using the anti-reflective coating composition, (A) perfluoroalkyl•alkylenesulfonic acid represented by the following formula (1): CnF2n+1(CH2CH2)mSO3H (1) (wherein, n represents an integer from 1 to 20, and m represents an integer from 0 to 20); (B) organic amine; (C) water-soluble polymer; (D) perfluoroalkylethyl group containing compound represented by the following formula (2): CkF2k+1CH2CH2—X—Y (2) (wherein, k represents an integer from 1 to 20, x represents a single bond or a divalent linking group, y represents an anionic group or a nonionic group, and this compound has a structure different from that of the component (A)); and (E) water.

摘要翻译： 本发明的目的是提供一种具有优异涂层性能的抗反射涂料组合物，同时保持作为抗反射膜的性能。 至少包含以下组分（A），（B），（C），（D）和（E）的抗反射涂料组合物和使用该抗反射涂料组合物的图案的制备方法，（A） 由下式（1）表示的全氟烷基亚烷基磺酸：C n2 N 2n + 1（CH 2 CH 2 CH 2） （1）（其中，n表示1〜20的整数，m表示0〜20的整数）;（3） （B）有机胺; （C）水溶性聚合物; （D）由下式（2）表示的含全氟烷基乙基的化合物：C k 2 F 2k + 1 CH 2 CH 2 -XY（2）（其中，k表示1至20的整数，x表示单键或二价连接基团，y表示阴离子基团或非离子基团，并且该化合物的结构不同于 （A））; 和（E）水。

公开(公告)号：US07799513B2

公开(公告)日：2010-09-21

申请号：US10518105

申请日：2003-06-10

申请人： Yasushi Akiyama ,  Yusuke Takano ,  Kiyohisa Takahashi ,  Sung-Eun Hong ,  Tetsuo Okayasu

发明人： Yasushi Akiyama ,  Yusuke Takano ,  Kiyohisa Takahashi ,  Sung-Eun Hong ,  Tetsuo Okayasu

IPC分类号： G03F7/00

CPC分类号： G03F7/11 ,  G03F7/168

摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.

摘要翻译： （1）C4〜C15全氟烷基羧酸，C4〜C10全氟烷基磺酸和全氟己二酸的铵盐，四烷基铵盐或C1〜C4烷醇胺盐的预防显影缺陷用组合物，或（2）氟化烷基季铵 无机酸的盐，其中所述表面活性剂以相对于酸与碱的比例为1:1-1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。 在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。 然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。 通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在 直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

公开(公告)号：US20100324330A1

公开(公告)日：2010-12-23

申请号：US12853640

申请日：2010-08-10

申请人： Yasushi Akiyama ,  Yusuke Takano ,  Kiyohisa Takahashi ,  Sung-Eun Hong ,  Tetsuo Okayasu

发明人： Yasushi Akiyama ,  Yusuke Takano ,  Kiyohisa Takahashi ,  Sung-Eun Hong ,  Tetsuo Okayasu

IPC分类号： C07C309/02 ,  C07C53/21 ,  C07C55/14

CPC分类号： G03F7/11 ,  G03F7/168

摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.

摘要翻译： （1）C4〜C15全氟烷基羧酸，C4〜C10全氟烷基磺酸和全氟己二酸的铵盐，四烷基铵盐或C1〜C4链烷醇胺盐，或（2）氟化烷基季铵 无机酸的盐，其中所述表面活性剂以相对于酸与碱的比例为1:1-1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。 在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。 然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。 通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在 直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

公开(公告)号：US07365115B2

公开(公告)日：2008-04-29

申请号：US10519242

申请日：2003-06-26

申请人： Yasushi Akiyama ,  Yusuke Takano

发明人： Yasushi Akiyama ,  Yusuke Takano

IPC分类号： G03F7/11 ,  G03F7/00 ,  H01L21/027 ,  C09D129/10 ,  C09D127/12 ,  C09D133/16

CPC分类号： G03F7/091 ,  G03F7/0046 ,  H01L21/0276 ,  Y10S430/111

摘要： An anti-reflective coating film is formed by applying on a chemically amplified photoresist film an anti-reflective coating composition comprising an alkali-soluble fluorine-containing polymer, an acid, an amine and a solvent capable of dissolving these components and having a pH of 7 or less. The formed anti-reflective coating film can serve to prevent multiple reflections within the photoresist film, increase the amount of reduction in thickness of the photoresist film upon development with a developer after exposure, and form a pattern having a rectangular cross-sectional pattern and not having T-top or round top.

摘要翻译： 通过在化学放大的光致抗蚀剂膜上施加抗反射涂层组合物形成抗反射涂膜，所述抗反射涂层组合物包含碱溶性含氟聚合物，酸，胺和能够溶解这些组分的溶剂，并且具有 7以下。 所形成的抗反射涂膜可以用于防止光致抗蚀剂膜内的多次反射，在曝光后用显影剂显影时增加光致抗蚀剂膜的厚度减小量，并形成具有矩形横截面图案的图案 有T顶或圆顶。

公开(公告)号：US20050221236A1

公开(公告)日：2005-10-06

申请号：US10518105

申请日：2003-06-10

申请人： Yasushi Akiyama ,  Yusuke Takano ,  Kiyohisa Takahashi ,  Sung-Eun Hong ,  Tetsuo Okayasu

发明人： Yasushi Akiyama ,  Yusuke Takano ,  Kiyohisa Takahashi ,  Sung-Eun Hong ,  Tetsuo Okayasu

IPC分类号： G03F7/11 ,  G03F7/16 ,  G03F7/38 ,  H01L21/027 ,  G03F7/40

CPC分类号： G03F7/11 ,  G03F7/168

摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.

摘要翻译： 用于防止含有（1）C 4的铵盐，四烷基铵盐或C 1〜C 4烷醇胺盐的显影缺陷的组合物 的全氟烷基羧酸，C 4〜C 10全氟烷基磺酸和全氟己二酸，或（2）氟代烷基季铵盐 无机酸，其中所述表面活性剂以相对于酸与碱的比例为1:1:1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。 在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。 然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。 通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在 直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。