Abstract:
A method of making a diode laser assembly includes providing a substrate. An epitaxial structure is formed on the substrate. Different areas of the epitaxial structure have different optical properties. A laser, a modulator and a coupler are formed in the epitaxial structure.
Abstract:
A laser assembly includes an epitaxial structure formed on a substrate. A separately controllable tunable laser resonator and external optical amplifier are formed in the epitaxial structure. At least a portion of the laser and amplifier share a common waveguide, which may have non-uniform optical or geometrical properties along the waveguide centerline or across a normal to the centerline.
Abstract:
A method of generating an optical signal provides a diode laser assembly including an epitaxial structure formed on a substrate. A laser and an amplifier are formed in the epitaxial structure. At least a portion of the laser and amplifier share a common waveguide. A tunable laser output is produced from the laser. The laser output is coupled into the amplifier along the common waveguide. An optical signal is generated from the amplifier.
Abstract:
A laser assembly includes an epitaxial structure formed on a substrate. A laser resonator, a modulator and a coupler are formed in the epitaxial structure. The coupler is positioned to receive and adjust an output received from the modulator.
Abstract:
A method of converting an optical wavelength includes providing a wavelength converter assembly with a photodetector and a laser with a common epitaxial structure. The expitaxial structure has areas of differing bandgap. An optical input having a first wavelength at the wavelength converter assembly is absorbed. A first electrical signal is generated from the photodetector in response to the optical input. The first electrical signal is conditioned to produce a conditioned first electrical signal. A second electrical signal is generated from the conditioned first electrical signal. A laser output is generated from a gain medium of the laser at a second wavelength in response to the second electrical signal.
Abstract:
The present invention relates to the tailoring the reflectivity spectrum of a sampled-grating distributed Bragg reflector (SGDBR) by applying digital sampling theory to choose the way each reflector is sampled. The resulting mirror covers a larger wavelength span and has peaks with a larger, more uniform, coupling constant (κ) than the mirrors produced using conventional approaches. The improved mirror also retains the benefits of the sample grating approach. Additionally, most of the embodiments are relatively simple to manufacture.
Abstract:
A method of making a diode laser assembly provides a substrate. An epitaxial structure is formed on the substrate. Different areas of the epitaxial structure have different optical properties. A laser, a modulator and a coupler are formed in the epitaxial structure.
Abstract:
A tunable laser source with integrated optical modulator. The tunable laser source is a widely tunable semiconductor laser that is comprised of an active region on top of a thick, low bandgap, waveguide layer, wherein both the waveguide layer and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator is integrated into the semiconductor laser, wherein the electro-absorption modulator shares the waveguide layer with the semiconductor laser.
Abstract:
A monolithically-integrated semiconductor optical transmitter that can index tune to any transmission wavelength in a given range, wherein the range is larger than that achievable by the maximum refractive index tuning allowed by the semiconductor material itself (i.e. Δλ/λ>Δn/n). In practice, this tuning range is >15 nm. The transmitter includes a Mach-Zehnder (MZ) modulator monolithically integrated with a widely tunable laser and a semiconductor optical amplifier (SOA). By using an interferometric modulation, the transmitter can dynamically control the chirp in the resulting modulated signal over the wide tuning range of the laser.
Abstract:
A wavelength monitor is provided based on the transmission response of an optical filter. The monitor provides feedback to the laser enabling it to lock to any given wavelength within its tuning range. The invention is also a process for integrating the wavelength monitor directly on chip with a variety of tunable semiconductor lasers. The invention also comprises a method for controlling the wavelength of a tunable laser by using a wavelength monitor to measure the output light and provide feedback to a control system. The laser and wavelength monitor are integrated together on a single indium phosphide chip. The wavelength monitor comprises a filter with a wavelength dependent transmission function and a pair of detectors. One detector is illuminated with light that has passed through the filter and the other provides a reference to measure the input intensity. Taking the ratio of the filtered light level to the unfiltered light provides a wavelength dependent wavelength. The filter is designed such that the transmission function is monotonic and varies from a minimum at one extent of the laser's tuning range to a maximum at the other extent.