公开(公告)号：US20110006307A1

公开(公告)日：2011-01-13

申请号：US12828447

申请日：2010-07-01

申请人： Guan-Ting CHEN ,  Chia-Ming LEE

发明人： Guan-Ting CHEN ,  Chia-Ming LEE

IPC分类号： H01L29/872 ,  H01L29/205 ,  H01L21/329 ,  H01L29/20

CPC分类号： H01L29/872 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/66212

摘要： A group III-nitride semiconductor Schottky diode comprises a conducting substrate having a first surface, a stack of multiple layers including a buffer layer and a semiconductor layer sequentially formed on the first surface, wherein the semiconductor layer comprises a group III nitride compound, a first electrode on the semiconductor layer, and a second electrode formed in contact with the first surface at a position adjacent to the stack of multiple layers. In other embodiments, the application also describes a method of fabricating the group III-nitride semiconductor Schottky diode.

摘要翻译： III族氮化物半导体肖特基二极管包括具有第一表面的导电衬底，包括缓冲层的多层叠层和顺序地形成在第一表面上的半导体层，其中半导体层包括III族氮化物化合物，第一 电极，以及在与多层叠层相邻的位置形成为与第一表面接触的第二电极。 在其它实施例中，本申请还描述了制造III族氮化物半导体肖特基二极管的方法。

公开(公告)号：US20100140653A1

公开(公告)日：2010-06-10

申请号：US12709105

申请日：2010-02-19

申请人： Hung-Cheng LIN ,  Chia-Ming LEE ,  Jen-Inn CHYI

发明人： Hung-Cheng LIN ,  Chia-Ming LEE ,  Jen-Inn CHYI

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.

摘要翻译： 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以在雕刻区域上形成化学反应层; 选择性地蚀刻雕刻区域以形成多个凹陷区域并形成多个凸区域; 在衬底的元件区域和雕刻区域上外延生长半导体层结构; 通过光刻工艺将元件区域上的半导体层结构制成LED元件。

公开(公告)号：US20090159871A1

公开(公告)日：2009-06-25

申请号：US11963517

申请日：2007-12-21

申请人： Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

发明人： Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

摘要： The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

公开(公告)号：US20090298213A1

公开(公告)日：2009-12-03

申请号：US12538427

申请日：2009-08-10

申请人： Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

发明人： Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

摘要： The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.