Abstract:
The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.
Abstract:
A heat sink and an electronic apparatus using the same are disclosed. The heat sink comprises a fin structure and a fastening assembly; the fastening assembly comprises an adjustable positioning member, an elastic member, and a hooking member, the elastic member being disposed between the hooking member and the fin structure such that the adjustable positioning member combines the hooking member, the elastic member, and the fin structure; wherein the hooking member may secure the heat sink onto an electronic component, and the adjustable positioning member may be used to adjust the tightness between the heat sink and the electronic component.
Abstract:
A display module is provided. The display module comprises a display panel, a printed circuit board, and a flexible packaging unit. The display panel has a plurality of first signal pads and at least one first dummy pad. The printed circuit board has a plurality of second signal pads and at least one second dummy pad. In addition, the flexible packaging unit comprises a flexible carrier and a chip, wherein the flexible carrier has a plurality of signal lines and at least one electrostatic discharge protective line. The electrostatic discharge protective line is connected between the first dummy pad and the second dummy pad. Furthermore, the electrostatic discharge protective line has an electricity conducting pad, which is exposed on the surface of the flexible carrier. The chip is disposed on the flexible carrier and connected to the display panel and the printed circuit board through the signal lines.
Abstract:
The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.
Abstract:
In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.
Abstract translation:在形成结晶GaN基材料的方法中,在第一温度下在基板上形成第一成核层,随后在与第一温度不同的第二温度下形成第二成核层。 第一和第二成核层由Al x In y Ga(1-x-y)N组成。 随后,在第二成核层上生长一层结晶的GaN基化合物外延生长。
Abstract:
A light-emitting device comprises a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.
Abstract:
A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure.
Abstract:
A multi-layered printed circuit board (PCB) for connection with an external connector. The external connector has a signal pin and an outer conductor. The printed circuit board includes a first conductive reference plane, a signal trace, a second conductive reference plane, a characteristic impedance member, and a third conductive reference plane. The characteristic impedance member is provided for connecting the signal trace and the signal pin. The third conductive reference plane is provided for electrical connection with the outer conductor. There are vertical separations inserted between the first conductive reference plane, the second conductive reference plane, and the third conductive reference plane within the printed circuit.
Abstract:
According to a preferred embodiment of the present invention, there is provided a novel and optimal semiconductor light emitting device comprising a substrate, an n layer disposed co-extensively on the substrate, an n++ layer disposed non-extensively and flush on one side of the n layer. Furthermore, a p+ layer is disposed co-extensively on the n++ layer of the LED according to the invention, with a p layer further disposed co-extensively on the p+ layer. A p cladding layer is disposed co-extensively on the p layer. A multiple quantum well (MQW) layer is disposed co-extensively on the p cladding layer, and an n cladding layer is further disposed co-extensively on the MQW layer. A second n layer is disposed co-extensively on the n cladding layer. An n+ layer is disposed co-extensively on the second n layer of the LED according to the invention. After partially etching the device, an n electrode is formed opposite n++ layer non-extensively on the surface of n layer, and a second n electrode is formed non-extensively (without etching) upon the n+ layer.
Abstract:
The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.