Abstract:
A group III-nitride semiconductor Schottky diode comprises a conducting substrate having a first surface, a stack of multiple layers including a buffer layer and a semiconductor layer sequentially formed on the first surface, wherein the semiconductor layer comprises a group III nitride compound, a first electrode on the semiconductor layer, and a second electrode formed in contact with the first surface at a position adjacent to the stack of multiple layers. In other embodiments, the application also describes a method of fabricating the group III-nitride semiconductor Schottky diode.
Abstract:
An electrochemical test strip, an electrochemical test system, and a measurement method using the same are provided. The electrochemical test strip includes an insulating substrate, an electrode system formed on the insulating substrate, and an insulating layer formed on the electrode system. The electrode system includes a set of measurement electrodes, a set of identifying electrodes, and a resistive path having a predetermined resistance value. The set of identifying electrodes is made of metal material, and the resistive path is made of non-metal material. The set of measurement electrodes includes a reference electrode and a working electrode insulated from each other, and the set of identifying electrodes includes a first identifying electrode and a second identifying electrode connected with each other through the resistive path. The insulating layer covers a part of the electrode system, wherein a part of the electrode system not covered by the insulating layer forms a reaction region with a supply port. When a sample is injected into the supply port of the reaction region, the injected sample reaches the set of measurement electrodes and the set of identifying electrodes in sequence.