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    Hydrogenated amorphous silicon alloys
    1.
    发明授权
    Hydrogenated amorphous silicon alloys 失效
    氢化非晶硅合金

    公开(公告)号：US5888452A

    公开(公告)日：1999-03-30

    申请号：US729434

    申请日：1991-07-12

    申请人： Guang Hai Lin ,  John O'M. Bockris ,  Muzhi He ,  Mridula Kapur

    发明人： Guang Hai Lin ,  John O'M. Bockris ,  Muzhi He ,  Mridula Kapur

    IPC分类号： H01L31/0376 ,  H01L31/20 ,  C22C29/18 ,  C22C16/00

    CPC分类号： H01L31/20 ,  H01L31/0376 ,  Y02E10/50

    摘要： Novel hydrogenated amorphous silicon alloys are disclosed. Hydrogenated amorphous silicon alloys produced by PECVD are disclosed. A method is also disclosed for the preparation of novel hydrogenated amorphous silicon alloys for use as thin films. The method comprises subjecting a mixed gas of gas-phase silicon compounds and other gas-phase alloy element compounds to plasma enhanced chemical vapor deposition in a reaction zone such that the alloy formed is deposited on a substrate.

    摘要翻译： 公开了新型氢化非晶硅合金。 公开了通过PECVD生产的氢化非晶硅合金。 还公开了用于制备用作薄膜的新型氢化非晶硅合金的方法。 该方法包括使气相硅化合物和其它气相合金元素化合物的混合气体在反应区中进行等离子体增强的化学气相沉积，使得形成的合金沉积在基底上。

    Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects
    2.
    发明授权
    Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects 失效
    非斯基硅基光电半导体材料不含Staebler-Wronski效应

    公开(公告)号：US5242505A

    公开(公告)日：1993-09-07

    申请号：US800918

    申请日：1991-12-03

    申请人： Guang H. Lin ,  Mu Z. He ,  Mridula Kapur ,  John O'M. Bockris

    发明人： Guang H. Lin ,  Mu Z. He ,  Mridula Kapur ,  John O'M. Bockris

    IPC分类号： H01L31/032 ,  H01L31/0392 ,  H01L31/075

    CPC分类号： H01L31/0392 ,  H01L31/0324 ,  H01L31/075 ,  Y02E10/548 ,  Y10T428/12528

    摘要： Alloys of amorphous silicon with Group VIa elements are disclosed that form high-quality materials for photovoltaic cells that are resistant to Staebler-Wronski photodegradation. Also disclosed are methods for manufacturing the alloys. The alloys can be formed as films on solid-state substrates by reacting silane gas and at least one alloying gas (H.sub.2 M, wherein M is an element from Group VIa of the periodic table), preferably with hydrogen dilution, by a glow-discharge method such as plasma-enhanced chemical vapor deposition. The alloys can have an optical bandgap energy from about 1.0 eV to about 2.3 eV, as determined by selecting one or more different Group VIa elements for alloying or by changing the concentration(s) of the alloying element(s) in the alloy. The alloys exhibit excellent light-to-dark conductivity ratios, excellent structural quality, and resistance to Staebler-Wronski degradation. They can be used as "i" type or doped for use as "p" or "n" type materials.

    摘要翻译： 公开了具有VIa族元素的非晶硅的合金，其形成了抵抗Staebler-Wronski光降解的用于光伏电池的高质量材料。 还公开了用于制造合金的方法。 合金可以通过硅烷气体和至少一种合金气体（H 2 M，其中M是元素周期表VIa中的元素），优选用氢稀释法，通过辉光放电法 例如等离子体增强化学气相沉积。 通过选择合金化中的一种或多种不同的VIa族元素或通过改变合金中的合金元素的浓度来确定，合金可以具有约1.0eV至约2.3eV的光学带隙能。 该合金表现出优异的光 - 暗电导率，优异的结构质量和耐Stellbler-Wronski降解性能。 它们可以用作“i”型或掺杂用作“p”或“n”型材料。

    Electrolysis of water using hydrogen sulfide
    4.
    发明授权
    Electrolysis of water using hydrogen sulfide 失效
    用硫化氢电解水

    公开(公告)号：US4995952A

    公开(公告)日：1991-02-26

    申请号：US044068

    申请日：1987-04-30

    申请人： Balasubramaniam Dandapani ,  John O'M. Bockris

    发明人： Balasubramaniam Dandapani ,  John O'M. Bockris

    IPC分类号： C25B1/00 ,  C25B1/02

    CPC分类号： C25B1/02 ,  C25B1/00

    摘要： Conditions have been found which make possible the continuous electrolysis of water using hydrogen sulfide. Contrary to the previous claims, it is not necessary to add a solvent for sulfur extraction. The invention avoids the difficulty of the passivation of the anode and the interruption of the current flow.

    摘要翻译： 已经发现使用硫化氢连续电解水的条件。 与前述权利要求相反，不需要添加用于硫提取的溶剂。 本发明避免了阳极钝化和电流中断的困难。

    One-unit photo-activated electrolyzer
    5.
    发明授权
    One-unit photo-activated electrolyzer 失效
    一体式光电池

    公开(公告)号：US4722776A

    公开(公告)日：1988-02-02

    申请号：US589427

    申请日：1984-03-14

    申请人： Oliver J. Murphy ,  John O'M. Bockris

    发明人： Oliver J. Murphy ,  John O'M. Bockris

    IPC分类号： C25B1/00 ,  C25B11/06 ,  C25B9/00 ,  H01M6/36

    CPC分类号： C25B1/003

    摘要： A photo-activated semiconductor device is adapted to be exposed to light energy. Two physically separated electrocatalysts are placed in electrical contact with the photo-activated semiconductor device. An electrolytic solution physically separated from the semiconductor device is placed in electrical contact with both electrocatalysts. A method for supplying electrical energy to an anode and a cathode is an electrochemical reaction zone containing an electrolytic solution which comprises positioning a photo-activated semiconductor device having separate donor and acceptor regions external to an electrolytic solution. The donor region is electrically connected to a cathode and the acceptor region is electrically connected to the anode. A portion of the photo-activated semiconductor device is exposed to a source of radiation which is external to the reaction zone. The products derived from the electrolytic solution are collected for later use.

    摘要翻译： 光敏半导体器件适于暴露于光能。 将两个物理分离的电催化剂放置成与光敏半导体器件电接触。 与半导体器件物理分离的电解溶液与两个电催化剂电接触。 向阳极和阴极提供电能的方法是含有电解液的电化学反应区，该电化学反应区包括将具有在电解液外部具有分开的供体和受体区域的光激活半导体器件定位。 施主区域电连接到阴极，并且受体区域电连接到阳极。 光激活的半导体器件的一部分暴露于在反应区外部的辐射源。 从电解液中得到的产物被收集供以后使用。