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    METHOD AND DEVICE FOR REPLACING OBJECTIVE PARTS
    4.
    发明申请
    METHOD AND DEVICE FOR REPLACING OBJECTIVE PARTS 审中-公开
    用于替换目标部件的方法和装置

    公开(公告)号：US20090260654A1

    公开(公告)日：2009-10-22

    申请号：US12430633

    申请日：2009-04-27

    申请人： Bernhard Geuppert ,  Guido Limbach ,  Harald Woelfle ,  Peter Deufel

    发明人： Bernhard Geuppert ,  Guido Limbach ,  Harald Woelfle ,  Peter Deufel

    IPC分类号： G02B7/14 ,  B08B3/12 ,  B08B7/00 ,  B08B1/00

    CPC分类号： G03F7/70925 ,  B08B3/12 ,  B08B7/0035 ,  B23P6/00 ,  G03F7/70808 ,  G03F7/70825 ,  G03F7/70833 ,  G03F7/70916 ,  G03F7/70975 ,  Y10T29/49723

    摘要： A method and a device for replacing objective parts, especially of a projection or illumination objective for microlithography in which an objective having an objective interior and objective parts provided therein is provided. At least one objective part is replaceably accommodated in the objective. Immediately prior to installation in the objective, the replaceable objective part is cleaned outside the objective interior in at least one cleaning room sealed off from the ambient atmosphere. Immediately after cleaning, the replaceable objective is installed in the objective without contact with the normal ambient atmosphere.

    摘要翻译： 一种用于替换目标部件的方法和装置，特别是用于微光刻的投影或照明物镜，其中设置有设置在其中的物镜内部和物镜部分的物镜。 目标中至少有一个客观部分是可替换的。 在安装目标之前，在与环境大气密封的至少一个清洁室内，可更换的物镜部分被清洁在目标内部的外部。 清洁后立即将可更换的物镜安装在物镜中，而不会与正常的环境气氛接触。

    METHOD FOR CLEANING AN EUV LITHOGRAPHY DEVICE, METHOD FOR MEASURING THE RESIDUAL GAS ATMOSPHERE AND THE CONTAMINATION AND EUV LITHOGRAPHY DEVICE
    5.
    发明申请
    METHOD FOR CLEANING AN EUV LITHOGRAPHY DEVICE, METHOD FOR MEASURING THE RESIDUAL GAS ATMOSPHERE AND THE CONTAMINATION AND EUV LITHOGRAPHY DEVICE 有权
    用于清洁EUV光刻设备的方法，用于测量残余气体大气和污染物和EUV光刻设备的方法

    公开(公告)号：US20100034349A1

    公开(公告)日：2010-02-11

    申请号：US12555620

    申请日：2009-09-08

    申请人： Dieter KRAUS ,  Dirk Heinrich Ehm ,  Thomas Stein ,  Harald Woelfle ,  Stefan-Wolfgang Schmidt

    发明人： Dieter KRAUS ,  Dirk Heinrich Ehm ,  Thomas Stein ,  Harald Woelfle ,  Stefan-Wolfgang Schmidt

    IPC分类号： A61B6/02

    CPC分类号： G01N21/67 ,  G01N21/94 ,  G03F7/7085 ,  G03F7/70916 ,  G03F7/70925

    摘要： Components (30) in the interior of an EUV lithography device for extreme ultraviolet and soft X-ray wavelength range are cleaned by igniting a plasma, adjacent to the component (30) to be cleaned, using electrodes (29), wherein the electrodes (29) are adapted to the form of the component (30) to be cleaned. The residual gas atmosphere is measured spectroscopically on the basis of the plasma. An emission spectrum is preferably recorded in order to monitor the degree of cleaning. An optical fiber cable (31) with a coupling-in optical unit (32) is advantageously used for this purpose. Moreover, in order to monitor the contamination in the gas phase within the vacuum chambers during the operation of an EUV lithography device, it is proposed to provide modules configured to initiate a gas discharge and to detect radiation emitted on account of the gas discharge. The contamination in the gas phase can be deduced from the analysis of the measured spectrum.

    摘要翻译： 用于极紫外和软X射线波长范围的EUV光刻设备内部的部件（30）通过使用电极（29）点燃邻近被清洁部件（30）的等离子体来清洁，其中电极 29）适于被清洁的部件（30）的形式。 在等离子体的基础上光谱测量残留气体气氛。 优选记录发射光谱以监测清洁程度。 具有耦合入光学单元（32）的光纤电缆（31）有利地用于此目的。 此外，为了在EUV光刻设备的操作期间监测真空室内的气相中的污染，建议提供被配置为启动气体放电并且检测由于气体放电而发射的辐射的模块。 气相中的污染可以从测量光谱的分析推导出来。

    Method for cleaning an EUV lithography device, method for measuring the residual gas atmosphere and the contamination and EUV lithography device
    6.
    发明授权
    Method for cleaning an EUV lithography device, method for measuring the residual gas atmosphere and the contamination and EUV lithography device 有权
    用于清洁EUV光刻设备的方法，用于测量残余气体气氛的方法以及污染物和EUV光刻设备

    公开(公告)号：US07911598B2

    公开(公告)日：2011-03-22

    申请号：US12555620

    申请日：2009-09-08

    申请人： Dieter Kraus ,  Dirk Heinrich Ehm ,  Thomas Stein ,  Harald Woelfle ,  Stefan-Wolfgang Schmidt

    发明人： Dieter Kraus ,  Dirk Heinrich Ehm ,  Thomas Stein ,  Harald Woelfle ,  Stefan-Wolfgang Schmidt

    IPC分类号： G01N21/73

    CPC分类号： G01N21/67 ,  G01N21/94 ,  G03F7/7085 ,  G03F7/70916 ,  G03F7/70925

    摘要： Components (30) in the interior of an EUV lithography device for extreme ultraviolet and soft X-ray wavelength range are cleaned by igniting a plasma, adjacent to the component (30) to be cleaned, using electrodes (29), wherein the electrodes (29) are adapted to the form of the component (30) to be cleaned. The residual gas atmosphere is measured spectroscopically on the basis of the plasma. An emission spectrum is preferably recorded in order to monitor the degree of cleaning. An optical fiber cable (31) with a coupling-in optical unit (32) is advantageously used for this purpose. Moreover, in order to monitor the contamination in the gas phase within the vacuum chambers during the operation of an EUV lithography device, it is proposed to provide modules configured to initiate a gas discharge and to detect radiation emitted on account of the gas discharge. The contamination in the gas phase can be deduced from the analysis of the measured spectrum.

    摘要翻译： 用于极紫外和软X射线波长范围的EUV光刻设备内部的部件（30）通过使用电极（29）点燃邻近被清洁部件（30）的等离子体来清洁，其中电极 29）适于被清洁的部件（30）的形式。 在等离子体的基础上光谱测量残留气体气氛。 优选记录发射光谱以监测清洁程度。 具有耦合入光学单元（32）的光纤电缆（31）有利地用于此目的。 此外，为了在EUV光刻设备的操作期间监测真空室内的气相中的污染，建议提供被配置为启动气体放电并且检测由于气体放电而发射的辐射的模块。 气相中的污染可以从测量光谱的分析推导出来。