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    METHOD FOR CLEANING AN EUV LITHOGRAPHY DEVICE, METHOD FOR MEASURING THE RESIDUAL GAS ATMOSPHERE AND THE CONTAMINATION AND EUV LITHOGRAPHY DEVICE
    1.
    发明申请
    METHOD FOR CLEANING AN EUV LITHOGRAPHY DEVICE, METHOD FOR MEASURING THE RESIDUAL GAS ATMOSPHERE AND THE CONTAMINATION AND EUV LITHOGRAPHY DEVICE 有权
    用于清洁EUV光刻设备的方法，用于测量残余气体大气和污染物和EUV光刻设备的方法

    公开(公告)号：US20100034349A1

    公开(公告)日：2010-02-11

    申请号：US12555620

    申请日：2009-09-08

    申请人： Dieter KRAUS ,  Dirk Heinrich Ehm ,  Thomas Stein ,  Harald Woelfle ,  Stefan-Wolfgang Schmidt

    发明人： Dieter KRAUS ,  Dirk Heinrich Ehm ,  Thomas Stein ,  Harald Woelfle ,  Stefan-Wolfgang Schmidt

    IPC分类号： A61B6/02

    CPC分类号： G01N21/67 ,  G01N21/94 ,  G03F7/7085 ,  G03F7/70916 ,  G03F7/70925

    摘要： Components (30) in the interior of an EUV lithography device for extreme ultraviolet and soft X-ray wavelength range are cleaned by igniting a plasma, adjacent to the component (30) to be cleaned, using electrodes (29), wherein the electrodes (29) are adapted to the form of the component (30) to be cleaned. The residual gas atmosphere is measured spectroscopically on the basis of the plasma. An emission spectrum is preferably recorded in order to monitor the degree of cleaning. An optical fiber cable (31) with a coupling-in optical unit (32) is advantageously used for this purpose. Moreover, in order to monitor the contamination in the gas phase within the vacuum chambers during the operation of an EUV lithography device, it is proposed to provide modules configured to initiate a gas discharge and to detect radiation emitted on account of the gas discharge. The contamination in the gas phase can be deduced from the analysis of the measured spectrum.

    摘要翻译： 用于极紫外和软X射线波长范围的EUV光刻设备内部的部件（30）通过使用电极（29）点燃邻近被清洁部件（30）的等离子体来清洁，其中电极 29）适于被清洁的部件（30）的形式。 在等离子体的基础上光谱测量残留气体气氛。 优选记录发射光谱以监测清洁程度。 具有耦合入光学单元（32）的光纤电缆（31）有利地用于此目的。 此外，为了在EUV光刻设备的操作期间监测真空室内的气相中的污染，建议提供被配置为启动气体放电并且检测由于气体放电而发射的辐射的模块。 气相中的污染可以从测量光谱的分析推导出来。

    DETECTION OF CONTAMINATING SUBSTANCES IN AN EUV LITHOGRAPHY APPARATUS
    2.
    发明申请
    DETECTION OF CONTAMINATING SUBSTANCES IN AN EUV LITHOGRAPHY APPARATUS 有权
    在EUV光刻设备中检测污染物质

    公开(公告)号：US20110211179A1

    公开(公告)日：2011-09-01

    申请号：US13035056

    申请日：2011-02-25

    申请人： Dieter KRAUS ,  Dirk Heinrich EHM ,  Stefan-Wolfgang SCHMIDT

    发明人： Dieter KRAUS ,  Dirk Heinrich EHM ,  Stefan-Wolfgang SCHMIDT

    IPC分类号： G03B27/52

    CPC分类号： G03F7/70916 ,  G03F7/7085 ,  G03F7/70983

    摘要： An EUV (extreme ultraviolet) lithography apparatus (1) including: a housing (1a) enclosing an interior (15), at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6) arranged in the interior (15), a vacuum generating unit (1b) generating a residual gas atmosphere in the interior (15), and a residual gas analyzer (18a, 18b) detecting at least one contaminating substance (17a) in the residual gas atmosphere. The residual gas analyzer (18a) has a storage device (21) having an ion trap for storing the contaminating substance (17a). Additionally, a method for detecting at least one contaminating substance by residual gas analysis of a residual gas atmosphere of an EUV lithography apparatus (1) having a housing (1a) having an interior (15), in which at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6), is arranged, wherein the contaminating substance (17a) is stored in a storage device (21) in order to carry out the residual gas analysis.

    摘要翻译： 一种EUV（极紫外）光刻设备（1），包括：包围内部的壳体（1a），布置在内部的至少一个反射光学元件（5,6,8,9,10,11.1至14.6） （15），在内部（15）中产生残留气体气氛的真空发生单元（1b）和在残留气体气氛中检测至少一种污染物质（17a）的残留气体分析器（18a，18b）。 残留气体分析器（18a）具有具有用于存储污染物质（17a）的离子阱的存储装置（21）。 另外，通过对具有内部（15）的壳体（1a）的EUV光刻设备（1）的残留气体气体的残留气体分析来检测至少一种污染物质的方法，其中至少一个反射光学元件 5，6，8，9，10，14.1至14.6），其中污染物质（17a）储存在存储装置（21）中以便进行残留气体分析。

    EUV LITHOGRAPHY APPARATUS AND METHOD FOR DETERMINING THE CONTAMINATION STATUS OF AN EUV-REFLECTIVE OPTICAL SURFACE
    3.
    发明申请
    EUV LITHOGRAPHY APPARATUS AND METHOD FOR DETERMINING THE CONTAMINATION STATUS OF AN EUV-REFLECTIVE OPTICAL SURFACE 有权
    EUV光刻设备和确定反射光学表面污染状态的方法

    公开(公告)号：US20100045948A1

    公开(公告)日：2010-02-25

    申请号：US12196075

    申请日：2008-08-21

    申请人： Dieter KRAUS ,  Dirk Heinrich Ehm ,  Stefan-Wolfgang Schmidt

    发明人： Dieter KRAUS ,  Dirk Heinrich Ehm ,  Stefan-Wolfgang Schmidt

    IPC分类号： G03B27/70 ,  G01N21/94

    CPC分类号： G01N21/94 ,  G01N21/55 ,  G01N2021/945 ,  G03B27/70 ,  G03F7/7085 ,  G03F7/70883 ,  G03F7/70916

    摘要： The invention relates to an EUV lithography apparatus with at least one EUV-reflective optical surface and a cavity ringdown reflectometer adapted to determine the contamination status of the EUV-reflective optical surface for at least one contaminating substance by determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm). The invention further relates to a method for determining the contamination status of at least one EUV-reflective optical surface arranged in an EUV lithography apparatus for at least one contaminating substance comprising determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm) using a cavity ringdown reflectometer.

    摘要翻译： 本发明涉及一种EUV光刻设备，其具有至少一个EUV反射光学表面和空腔响铃反射计，其适于通过确定EUV反射的反射率来确定至少一种污染物质的EUV反射光学表面的污染状态 用于测量波长（λm）的辐射的光学表面。 本发明还涉及一种用于确定在至少一种污染物质的EUV光刻设备中布置的至少一个EUV反射光学表面的污染状态的方法，包括确定EUV反射光学表面在测量波长处的辐射的反射率 （λm）使用空腔振铃反射计。

    METHOD FOR AVOIDING CONTAMINATION AND EUV-LITHOGRAPHY-SYSTEM
    4.
    发明申请
    METHOD FOR AVOIDING CONTAMINATION AND EUV-LITHOGRAPHY-SYSTEM 审中-公开
    避免污染和非线性系统的方法

    公开(公告)号：US20120086925A1

    公开(公告)日：2012-04-12

    申请号：US13267663

    申请日：2011-10-06

    申请人： Dieter KRAUS ,  Dirk Heinrich EHM ,  Stefan-Wolfgang SCHMIDT ,  Stefan WIESNER ,  Almut CZAP ,  Stefan KOEHLER ,  Hin Yiu Anthony CHUNG

    发明人： Dieter KRAUS ,  Dirk Heinrich EHM ,  Stefan-Wolfgang SCHMIDT ,  Stefan WIESNER ,  Almut CZAP ,  Stefan KOEHLER ,  Hin Yiu Anthony CHUNG

    IPC分类号： G03B27/52

    CPC分类号： G03F7/70933 ,  G03F7/70041 ,  G03F7/70916

    摘要： A method for preventing contaminating gaseous substances (18) from passing through an opening (17b) in a housing (4a) of an EUV lithography apparatus (1), wherein at least one optical element for guiding EUV radiation (6) is arranged in the housing (4a). The method involves: generating at least one gas flow (21a, 21b) which deflects the contaminating substances (18, 18′), and in particular is directed counter to the flow direction (Z) thereof, in the region of the opening (17b). The gas flow (21a, 21b) and the EUV radiation (6) are generated in pulsed fashion and the pulse rate of the gas flow (21a, 21b) is defined in a manner dependent on the pulse rate of the contaminating substances (18, 18′) released under the action of the pulsed EUV radiation (6), wherein both pulse rates are preferably equal in magnitude, and wherein, in the region of the opening (17b), the gas pulses temporally overlap the pulses of the contaminating substances (18, 18′). An associated EUV lithography apparatus at which the method can be carried out is also disclosed.

    摘要翻译： 一种用于防止污染气体物质（18）穿过EUV光刻设备（1）的壳体（4a）中的开口（17b）的方法，其中至少一个用于引导EUV辐射（6）的光学元件布置在 住房（4a）。 该方法包括：产生使污染物质（18,18'）偏转的至少一个气流（21a，21b），特别是在开口（17b）的区域中相对于其流动方向（Z）反向 ）。 以脉冲方式产生气流（21a，21b）和EUV辐射（6），气流（21a，21b）的脉率以取决于污染物质（18， 18'）在脉冲EUV辐射（6）的作用下释放，其中两个脉冲速率优选地相等，并且其中在开口区域（17b）中，气体脉冲在时间上与污染物质的脉冲重叠 （18,18'）。 还公开了可以执行该方法的相关EUV光刻设备。