公开(公告)号：US5905203A

公开(公告)日：1999-05-18

申请号：US723545

申请日：1996-09-30

Applicant: Georg Flach ,  Udo Nothelfer ,  Gunther Schuster ,  Heribert Weber

Inventor： Georg Flach ,  Udo Nothelfer ,  Gunther Schuster ,  Heribert Weber

IPC: G01P15/08 ,  G01P15/125 ,  H01L29/84

CPC classification number: G01P15/0802 ,  G01P15/125 ,  G01P2015/0831

Abstract: A micromechanical acceleration sensor consists of a first semiconductor wafer and a second semiconductor wafer, where on the first semiconductor wafer first and second electrodes, are provided to create a variable capacitance and the second semiconductor wafer has a movable third electrode, and where on the first semiconductor wafer there is a microelectronic evaluation unit. The moveable electrode is a rocker suspended asymmetrically with regard to an axis of rotation such that each respective portion is of a different length and is opposite one of the first and second electrodes. A closed ring structure is disposed on the surface of the first semiconductor wafer.

Abstract translation: 微机械加速度传感器由第一半导体晶片和第二半导体晶片构成，其中在第一半导体晶片第一和第二电极上设置第一和第二电极以产生可变电容，并且第二半导体晶片具有可移动的第三电极， 半导体晶片有一个微电子评估单元。 可移动电极是相对于旋转轴线不对称地悬挂的摇臂，使得每个相应部分具有不同的长度并与第一和第二电极之一相对。 封闭的环形结构设置在第一半导体晶片的表面上。

公开(公告)号：US5623099A

公开(公告)日：1997-04-22

申请号：US517436

申请日：1995-08-21

Applicant: Gunther Schuster ,  Udo Nothelfer

Inventor： Gunther Schuster ,  Udo Nothelfer

IPC: G01P15/08 ,  G01P15/125 ,  H01L29/84

CPC classification number: G01P15/0802 ,  G01P15/125 ,  G01P2015/0828

Abstract: This invention concerns a capacitive acceleration sensor complete with planar build-up, in particular for use as a component part of a vehicle occupant protection system within a motor vehicle. A self-supporting structure will be movably located within a hollow space between two semiconductor elements which are electrically insulated from each other but mechanically bonded, where an acceleration force acting on the inert mass of the self-supporting structure will cause a change in the distance between this self-supporting structure and the semiconductor element. This produces a change in capacity which can be evaluated by means of suitable circuitry.

Abstract translation: 本发明涉及一种具有平面建立的电容式加速度传感器，特别是用作机动车辆内的车辆乘员保护系统的组成部分。 自支撑结构将可移动地位于彼此电绝缘但机械结合的两个半导体元件之间的中空空间中，其中作用在自支撑结构的惰性质量上的加速力将导致距离的变化 在该自支撑结构和半导体元件之间。 这产生容量的变化，其可以通过合适的电路来评估。

公开(公告)号：US5693574A

公开(公告)日：1997-12-02

申请号：US192329

申请日：1994-02-04

Applicant: Gunther Schuster ,  Klaus Panitsch

Inventor： Gunther Schuster ,  Klaus Panitsch

IPC: H01L21/98 ,  H01L21/603

CPC classification number: H01L25/50 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/83805 ,  H01L2924/0002 ,  Y10S148/012 ,  Y10S148/058

Abstract: A process for the laminar joining of two or more silicon semiconductor slices (wafers) under the effect of pressure and heat, in which a thin layer of a semiconductor-compatible material is applied to at least one of the surfaces to be joined.

Abstract translation: 一种用于在压力和热力的作用下将两个或多个硅半导体薄片（晶片）层状连接的方法，其中半导体兼容材料的薄层被施加到待接合的表面中的至少一个。