公开(公告)号：US5770866A

公开(公告)日：1998-06-23

申请号：US736213

申请日：1996-10-25

Applicant: Gyung-Ock Kim ,  Dong-Wan Roh ,  Seung-Won Paek

Inventor： Gyung-Ock Kim ,  Dong-Wan Roh ,  Seung-Won Paek

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/772 ,  H01L29/88 ,  H01L29/15

CPC classification number: B82Y10/00 ,  H01L29/882

Abstract: The present invention provides a resonant tunneling electronic device having a plurality of nearly decoupled quantum barrier layers and quantum-well layers alternatively formed between an emitter layer and a collector layer, and has a stacked structure in such a manner that in the order of their stack the heights of the quantum barriers are gradually increased, and the widths of the quantum-wells interposed between the quantum barrier layers are gradually decreased, so that electron resonant tunneling through the aligned quantum with confined states under the application of external bias can occur.

Abstract translation: 本发明提供了一种谐振隧道电子器件，其具有多个几乎去耦的量子势垒层和交替地形成在发射极层和集电极层之间的量子阱层，并且具有堆叠结构，使得它们的堆叠 量子势垒的高度逐渐增加，量子势垒层之间插入的量子阱的宽度逐渐减小，从而在外部偏置的应用下，可能发生通过对准量子与限制状态的电子共振隧穿。

公开(公告)号：US5770869A

公开(公告)日：1998-06-23

申请号：US717905

申请日：1996-09-23

Applicant: Gyung-Ock Kim ,  Dong-Wan Roh

Inventor： Gyung-Ock Kim ,  Dong-Wan Roh

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/772 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC classification number: B82Y10/00 ,  H01L29/7376

Abstract: A resonant tunneling hot electron device uses an interband tunneling double barrier structure as an electron injection layer and is capable of increasing PVR and peak current using an enhanced resonant interband tunneling effect through alignment of a hole confined state and an electron confined state by a Stark shift effect. It includes a conductive collector layer formed on a substrate; a conductive base layer having a conduction band minimum lower than that of the emitter barrier layer and the collector barrier layer and having high electron mobility; a collector barrier layer formed between the base layer and the collector layer; and an electron injection electron barrier layer of an enhanced interband resonant tunneling quantum well broken band gap heterostructure formed between the emitter layer and the base layer. This structure exploits an enhanced resonant tunneling effect due to alignments of quantum confined states by Stark shifts.

Abstract translation: 谐振隧道热电子器件使用带间隧穿双阻挡结构作为电子注入层，并且能够通过利用斯塔克位移对空穴限制状态和电子约束状态的增强的谐振带间隧穿效应来增加PVR和峰值电流 影响。 它包括形成在基底上的导电收集层; 导电基层，其导带的最小值低于发射极阻挡层和集电极阻挡层的导带，并具有高的电子迁移率; 形成在所述基底层和所述集电体层之间的集电极阻挡层; 以及在发射极层和基极层之间形成的增强的带间谐振隧穿量子阱断裂带隙异质结构的电子注入电子势垒层。 该结构利用由Stark偏移量化限制状态的对齐而增强的谐振隧穿效应。