公开(公告)号：US5770866A

公开(公告)日：1998-06-23

申请号：US736213

申请日：1996-10-25

Applicant: Gyung-Ock Kim ,  Dong-Wan Roh ,  Seung-Won Paek

Inventor： Gyung-Ock Kim ,  Dong-Wan Roh ,  Seung-Won Paek

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/772 ,  H01L29/88 ,  H01L29/15

CPC classification number: B82Y10/00 ,  H01L29/882

Abstract: The present invention provides a resonant tunneling electronic device having a plurality of nearly decoupled quantum barrier layers and quantum-well layers alternatively formed between an emitter layer and a collector layer, and has a stacked structure in such a manner that in the order of their stack the heights of the quantum barriers are gradually increased, and the widths of the quantum-wells interposed between the quantum barrier layers are gradually decreased, so that electron resonant tunneling through the aligned quantum with confined states under the application of external bias can occur.

Abstract translation: 本发明提供了一种谐振隧道电子器件，其具有多个几乎去耦的量子势垒层和交替地形成在发射极层和集电极层之间的量子阱层，并且具有堆叠结构，使得它们的堆叠 量子势垒的高度逐渐增加，量子势垒层之间插入的量子阱的宽度逐渐减小，从而在外部偏置的应用下，可能发生通过对准量子与限制状态的电子共振隧穿。