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    MULTI-BLOCK SPUTTERING TARGET AND ASSOCIATED METHODS AND ARTICLES
    1.
    发明申请
    MULTI-BLOCK SPUTTERING TARGET AND ASSOCIATED METHODS AND ARTICLES 审中-公开

    公开(公告)号：US20200381225A1

    公开(公告)日：2020-12-03

    申请号：US16902830

    申请日：2020-06-16

    申请人： H.C. STARCK INC.

    发明人： Gary Alan Rozak ,  Mark E. Gaydos

    IPC分类号： H01J37/34 ,  C23C14/34 ,  B22F1/00 ,  B22F3/15 ,  B22F3/24 ,  C22C27/04

    摘要： A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 μm width (e.g., less than about 50 μm width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.

    MOLYBDENUM CONTAINING TARGETS
    3.
    发明申请
    MOLYBDENUM CONTAINING TARGETS 审中-公开

    公开(公告)号：US20180187297A1

    公开(公告)日：2018-07-05

    申请号：US15908896

    申请日：2018-03-01

    申请人： H.C. STARCK, INC.

    发明人： Gary Alan Rozak ,  Mark E. Gaydos ,  Patrick Alan Hogan ,  Shuwei Sun

    IPC分类号： C23C14/18 ,  C22C27/04 ,  C22C1/04 ,  G06F3/041 ,  C23C14/58 ,  C23C14/34

    摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.

    Multi-block sputtering target and associated methods and articles
    5.
    发明授权
    Multi-block sputtering target and associated methods and articles 有权

    公开(公告)号：US10727032B2

    公开(公告)日：2020-07-28

    申请号：US16238844

    申请日：2019-01-03

    申请人： H.C. Starck Inc.

    发明人： Gary Alan Rozak ,  Mark E. Gaydos

    IPC分类号： C23C14/34 ,  H01J37/34 ,  B22F1/00 ,  B22F3/15 ,  B22F3/24 ,  C22C27/04

    摘要： A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 μm width (e.g., less than about 50 μm width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.

    MOLYBDENUM-CONTAINING TARGETS COMPRISING THREE METAL ELEMENTS
    7.
    发明申请
    MOLYBDENUM-CONTAINING TARGETS COMPRISING THREE METAL ELEMENTS 有权
    包含三元金属元素的包含目标

    公开(公告)号：US20140102880A1

    公开(公告)日：2014-04-17

    申请号：US13856617

    申请日：2013-04-04

    申请人： H.C. STARCK, INC.

    发明人： Gary Alan Rozak ,  Mark E. Gaydos ,  Patrick Alan Hogan ,  Shuwei Sun

    IPC分类号： C23C14/34

    CPC分类号： C23C14/185 ,  B22F2998/10 ,  C22C1/045 ,  C22C27/04 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/5873 ,  G06F3/041 ,  G06F2203/04103 ,  Y10T428/12743 ,  Y10T428/12826 ,  Y10T428/265 ,  Y10T428/31678 ,  B22F1/0003 ,  B22F3/15

    摘要： The invention relates to sputter targets and methods for depositing a layer from a sputter target. The method preferably includes the steps of: placing a sputter target in a vacuum chamber; placing a substrate having a substrate surface in the vacuum chamber; reducing the pressure in the vacuum chamber to about 100 Torr or less; removing atoms from the surface of the sputter target while the sputter target is in the vacuum chamber (e.g., using a magnetic field and/or an electric field). The deposited layer preferably is a molybdenum containing alloy including about 50 atomic percent or more molybdenum, 0.5 to 45 atomic percent of a second metal element selected from the group consisting of niobium and vanadium; and 0.5 to 45 atomic percent of a third metal element selected from the group consisting of tantalum, chromium, vanadium, niobium, and titanium.

    摘要翻译： 本发明涉及用于从溅射靶沉积层的溅射靶和方法。 该方法优选包括以下步骤：将溅射靶放置在真空室中; 将具有基板表面的基板放置在所述真空室中; 将真空室中的压力降低至约100托或更低; 当溅射靶位于真空室（例如，使用磁场和/或电场）时，从溅射靶的表面去除原子。 沉积层优选是包含约50原子％或更多的钼，0.5至45原子％的选自铌和钒的第二金属元素的含钼合金; 和0.5〜45原子％的选自钽，铬，钒，铌和钛的第三金属元素。

    MOLYBDENUM CONTAINING TARGETS
    9.
    发明申请
    MOLYBDENUM CONTAINING TARGETS 有权

    公开(公告)号：US20210079512A1

    公开(公告)日：2021-03-18

    申请号：US17038325

    申请日：2020-09-30

    申请人： H.C. STARCK, INC.

    发明人： Gary Alan Rozak ,  Mark E. Gaydos ,  Patrick Alan Hogan ,  Shuwei Sun

    IPC分类号： C23C14/18 ,  C22C1/04 ,  C22C27/04 ,  C23C14/34 ,  C23C14/58 ,  G06F3/041

    摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.