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公开(公告)号：US20200212098A1
公开(公告)日：2020-07-02
申请号：US16643110
申请日：2018-07-19
IPC分类号： H01L27/148
摘要： The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.
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公开(公告)号：US20210057477A1
公开(公告)日：2021-02-25
申请号：US16963291
申请日：2018-11-27
发明人： Shin-ichiro TAKAGI , Yasuhito YONETA , Masaharu MURAMATSU , Nao INOUE , Hirokazu YAMAMOTO , Shinichi NAKATA , Takuo KOYAMA
IPC分类号： H01L27/146 , H01L23/00 , H01L23/31 , H01L21/56
摘要： A semiconductor device includes a support body including a mount region, a semiconductor chip disposed on the mount region with a predetermined distance therebetween, a bump disposed between the support body and the semiconductor chip, a wall portion disposed between the support body and the semiconductor chip along a part of an outer edge of the semiconductor chip, and an underfill resin layer disposed between the support body and the semiconductor chip. The underfill resin layer covers an outer side surface of the wall portion.
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公开(公告)号：US20170301722A1
公开(公告)日：2017-10-19
申请号：US15505993
申请日：2015-08-04
IPC分类号： H01L27/148 , H01L27/146
摘要： A back-illuminated solid-state imaging device includes a semiconductor substrate, a shift register, and a light-shielding film. The semiconductor substrate includes a light incident surface on the back side and a light receiving portion generating a charge in accordance with light incidence. The shift register is disposed on the side of a light-detective surface opposite to the light incident surface of the semiconductor substrate. The light-shielding film is disposed on the side of the light-detective surface of the semiconductor substrate. The light-shielding film includes an uneven surface opposing the light-detective surface.
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公开(公告)号：US20210305312A1
公开(公告)日：2021-09-30
申请号：US17344228
申请日：2021-06-10
IPC分类号： H01L27/148 , H04N5/372
摘要： A first region includes a plurality of first transfer column regions distributed in a first direction. A second region includes a plurality of second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction in the second transfer section. Lengths in a second direction of the plurality of first transfer column regions are equal. Lengths in the second direction of the plurality of second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region in the second direction increases in the charge transfer direction in response to a change in the lengths of the plurality of second transfer column regions.
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公开(公告)号：US20200212097A1
公开(公告)日：2020-07-02
申请号：US16643102
申请日：2018-07-19
IPC分类号： H01L27/148 , H04N5/372
摘要： A first region includes first transfer column regions distributed in a first direction. A second region includes second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction. Lengths in a second direction of the first transfer column regions are equal. Lengths in the second direction of the second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region increases in response to a change in the lengths of the second transfer column regions.
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公开(公告)号：US20220208809A1
公开(公告)日：2022-06-30
申请号：US17608212
申请日：2020-07-03
IPC分类号： H01L27/146 , H04N5/3745
摘要： A backside incident-type imaging element includes a semiconductor substrate having a front surface and a back surface on an opposite side from the front surface, a ground potential being applied to the semiconductor substrate, and a semiconductor layer formed on the front surface, in which the semiconductor layer has a first element part that includes a light receiving portion generating a signal charge according to incident light from a side of the back surface and outputs a signal voltage corresponding to the signal charge, and a second element part that includes an analog-digital converter converting the signal voltage output from the first element part into a digital signal.
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公开(公告)号：US20170229501A1
公开(公告)日：2017-08-10
申请号：US15502003
申请日：2015-08-03
IPC分类号： H01L27/146 , H01L31/02 , H01L27/148
CPC分类号： H01L27/14607 , H01L27/14609 , H01L27/14638 , H01L27/1464 , H01L27/14643 , H01L27/14665 , H01L27/14812 , H01L27/14831 , H01L27/14893 , H01L31/02002 , H04N5/372
摘要： A solid-state imaging device includes a plurality of photoelectric converting units and a plurality of charge-accumulating units each accumulating a charge generated in the corresponding photoelectric converting unit. The photoelectric converting unit includes a photosensitive region that generates the charge in accordance with light incidence, and an electric potential gradient forming unit that accelerates migration of charge in a second direction in the photosensitive region. The charge-accumulating unit includes: a plurality of regions (semiconductor layers) having an impurity concentration gradually changed in one way in the second direction, and electrodes adapted to apply electric fields to the plurality of regions. Each of the electrodes is disposed over the plurality of regions having the impurity concentration gradually varied.
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8.发明申请CHARGE-COUPLED DEVICE, MANUFACTURING METHOD THEREOF, AND SOLID-STATE IMAGING ELEMENT 有权充电耦合器件，其制造方法和固态成像元件公开(公告)号：US20160286147A1
公开(公告)日：2016-09-29
申请号：US15033408
申请日：2014-10-31
IPC分类号： H04N5/378 , H01L27/146 , H04N5/225 , H01L27/148
CPC分类号： H04N5/378 , H01L27/14685 , H01L27/14812 , H01L27/14825 , H01L27/14837 , H04N5/2253
摘要： Each pixel region PX includes a photoelectric conversion region S1, a resistive gate electrode R, a first transfer electrode T1, a second transfer electrode T2, a barrier region B positioned directly beneath the first transfer electrode T1 in a semiconductor substrate 10, and a charge accumulation region S2 positioned directly beneath the second transfer electrode T2 in the semiconductor substrate 10. An impurity concentration of the barrier region B is lower than an impurity concentration of the charge accumulation region S2, and the first transfer electrode T1 and the second transfer electrode T2 are electrically connected to each other.
摘要翻译： 每个像素区域PX包括光电转换区域S1，电阻栅电极R，第一转移电极T1，第二转移电极T2，位于半导体衬底10中的第一转移电极T1正下方的势垒区域B，以及电荷 存储区域S2位于半导体衬底10中的第二传输电极T2正下方。势垒区域B的杂质浓度低于电荷累积区域S2的杂质浓度，第一传输电极T1和第二传输电极T2 彼此电连接。
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公开(公告)号：US20160268334A1
公开(公告)日：2016-09-15
申请号：US15032130
申请日：2014-10-31
IPC分类号： H01L27/148
CPC分类号： H01L27/14825 , H01L27/14812 , H01L27/14843 , H04N5/3692 , H04N5/37213
摘要： An optical detection unit AR is divided so as to have a plurality of pixel regions PX aligned in a column direction. Signals from the plurality of pixel regions PX are integrated for each optical detection unit AR, and output the signal as an electrical signal corresponding to a one-dimensional optical image in time series. Each of the pixel regions PX includes a resistive gate electrode R which promotes transfer of charges in the photoelectric conversion region and a charge accumulation region S2. A drain region ARD is adjacent to the charge accumulation region S2 through a channel region.
摘要翻译： 光学检测单元AR被分割成具有在列方向上对齐的多个像素区域PX。 针对每个光学检测单元AR集成来自多个像素区域PX的信号，并且以时间序列将该信号作为与一维光学图像对应的电信号输出。 每个像素区域PX包括促进光电转换区域中的电荷转移的电阻栅电极R和电荷累积区域S2。 漏极区域ARD通过沟道区域与电荷累积区域S2相邻。
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公开(公告)号：US20240170528A1
公开(公告)日：2024-05-23
申请号：US18428396
申请日：2024-01-31
IPC分类号： H01L27/148 , H01L27/146 , H04N25/71 , H04N25/73
CPC分类号： H01L27/14843 , H01L27/14603 , H01L27/14607 , H01L27/14812 , H04N25/71 , H01L27/14831 , H04N25/73
摘要： The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.
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