LASER PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND INSPECTING DEVICE

    公开(公告)号:US20220005737A1

    公开(公告)日:2022-01-06

    申请号:US17281458

    申请日:2019-10-02

    Abstract: An inspecting device includes a stage configured to support a wafer in which a plurality of rows of modified regions are formed in a semiconductor substrate, a light source configured to output light, an objective lens configured to pass light propagated through the semiconductor substrate, a light detection part configured to detect light passing through the objective lens, and an inspection part configured to inspect whether or not there is a tip of a fracture in an inspection region between a front surface and the modified region closest to the front surface of the semiconductor substrate. The objective lens positions a virtual focus symmetrical with a focus with respect to the front surface in the inspection region. The light detection part detects light propagating from the back surface side of the semiconductor substrate to the back surface side via the front surface.

    LASER PROCESSING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND EXAMINATION DEVICE

    公开(公告)号:US20210398855A1

    公开(公告)日:2021-12-23

    申请号:US17281505

    申请日:2019-10-02

    Abstract: An inspecting device includes a stage configured to support a wafer in which a plurality of rows of modified regions are formed in a semiconductor substrate, a light source configured to output, an objective lens configured to pass light propagated through the semiconductor substrate, a light detection part configured to detect light passing through the objective lens, and an inspection part configured to inspect a tip position of a fracture in an inspection region between a back surface and the modified region closest to the back surface of the semiconductor substrate. The objective lens aligns a focus from the back surface side in an inspection region. The light detection part detects light propagating from the front surface side of the semiconductor substrate to the back surface side.

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