公开(公告)号：US20220406964A1

公开(公告)日：2022-12-22

申请号：US17441123

申请日：2020-06-10

申请人： HCP TECHNOLOGY CO., LTD.

发明人： Wenrong Zhuang ,  Ming Sun ,  Xiaochao Fu ,  Jingquan Lu

IPC分类号： H01L33/06 ,  H01L33/00 ,  H01L33/58

摘要： Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride or an indium tin oxide; and the electrode layer is located on the second-type layer.

公开(公告)号：US20220399397A1

公开(公告)日：2022-12-15

申请号：US17442278

申请日：2020-03-03

申请人： HCP TECHNOLOGY CO., LTD.

发明人： Wenrong Zhuang ,  Ming Sun ,  Xiaochao Fu ,  Jingquan Lu

IPC分类号： H01L27/15

摘要： Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride; and the electrode layer is located on the second-type layer.

公开(公告)号：US12068357B2

公开(公告)日：2024-08-20

申请号：US17442278

申请日：2020-03-03

申请人： HCP TECHNOLOGY CO., LTD.

发明人： Wenrong Zhuang ,  Ming Sun ,  Xiaochao Fu ,  Jingquan Lu

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/58 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L27/156 ,  H01L33/0075 ,  H01L33/0093 ,  H01L33/06 ,  H01L33/58 ,  H01L33/32 ,  H01L33/42

摘要： Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride; and the electrode layer is located on the second-type layer.