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    PROCESS FOR PRODUCING A SHINY LAMINATE STRUCTURE AT LOW TEMPERATURES
    1.
    发明申请
    PROCESS FOR PRODUCING A SHINY LAMINATE STRUCTURE AT LOW TEMPERATURES 审中-公开
    在低温下生产新颖的层压结构的方法

    公开(公告)号：US20160236280A1

    公开(公告)日：2016-08-18

    申请号：US15023961

    申请日：2014-09-24

    申请人： HERAEUS DEUTSCHLAND GMBH & CO. KG

    发明人： Susanne BEHL ,  Kai-Ulrich BOLDT

    IPC分类号： B22F7/04 ,  B22F9/24 ,  B22F1/00

    CPC分类号： B22F7/04 ,  B22F1/0018 ,  B22F1/0022 ,  B22F1/0074 ,  B22F9/24 ,  B22F2007/042 ,  B22F2007/047 ,  B22F2009/245 ,  B22F2301/255 ,  B22F2304/054 ,  B22F2998/10

    摘要： Process for producing a layer structure (2), which comprises the steps: E1. provision of a composition (6) comprising i. gold (Au) particles in an amount in the range from 0.1 to 50% by weight; ii. a balance to 100% by weight of a polar, protic organic solvent; iii. less than 5% by weight of water, where the % by weight, in each case based on the total mass of the composition (6), add up to 100% by weight; E2. application of the composition (6) to a substrate (4) to give a precursor (12); E3. heating of the precursor (12) to a temperature in the range from 25 to 200° C. to give the layer structure (2).

    摘要翻译： 用于制造层结构（2）的方法，包括以下步骤：E1。 提供组合物（6），包括i。 金（Au）颗粒的量为0.1至50重量％; ii。 余量为100重量％的极性质子有机溶剂; iii。 小于5重量％的水，其中基于组合物（6）的总质量的每种情况下的重量％加起来为100重量％ E2。 将组合物（6）施用于基材（4）以得到前体（12）; E3。 将前体（12）加热至25〜200℃的温度，得到层结构（2）。

    FORMULATION FOR APPLICATION ONTO GLASS, PORCELAIN, TILES, METALS AND PLASTIC FOIL
    2.
    发明申请
    FORMULATION FOR APPLICATION ONTO GLASS, PORCELAIN, TILES, METALS AND PLASTIC FOIL 有权

    公开(公告)号：US20210222024A1

    公开(公告)日：2021-07-22

    申请号：US16748314

    申请日：2020-01-21

    申请人： Heraeus Deutschland GmbH & Co. KG

    发明人： Kai-Ulrich BOLDT ,  Peter KRAEMER ,  Susanne BEHL

    IPC分类号： C09D11/52 ,  C09D5/24 ,  C09D11/38 ,  C09D11/03 ,  B41M5/00

    摘要： The invention relates to a composition containing at least the two following components: a) a silver carboxylate, and b) a terpene, an ink for ink jet printing and a paste for printing with a screen printing method, wherein the ink or the paste, respectively, each contains the composition according to the invention. The invention also relates to a method for producing a pattern on a substrate, at least comprising the following steps: A) providing a substrate and a composition containing at least one silver carboxylate and one terpene; B) applying the composition to the substrate while preserving a precursor with the pattern; C) treating the precursor with the pattern according to a treatment step that is selected from the group consisting of: a) at a temperature of more than 200° C. for at least 10 minutes, wherein the treatment is preferably carried out in an atmosphere of air; b) a photonic sintering process; c) a combination of a) and b), wherein the substrate to which the pattern is applied is preserved. The invention further relates to a printer, an item that is coated at least in part, and a use of the composition according to the invention for applying a pattern.

    METALLIZATION OF SEMICONDUCTOR WAFER
    3.
    发明公开
    METALLIZATION OF SEMICONDUCTOR WAFER 审中-公开

    公开(公告)号：US20240030039A1

    公开(公告)日：2024-01-25

    申请号：US18255516

    申请日：2021-12-01

    申请人： Heraeus Deutschland GmbH & Co. KG

    发明人： Erwei LIU ,  Lan WANG ,  Kai-Ulrich BOLDT ,  Fangzhong SHEN

    IPC分类号： H01L21/3205 ,  H01L21/321 ,  H01L21/288

    CPC分类号： H01L21/32051 ,  H01L21/321 ,  H01L21/288

    摘要： The present invention relates to a method for manufacturing a semiconductor wafer comprising: i) applying a MOD ink composition to a semiconductor wafer, thereby forming a precursor layer; and ii) curing the precursor layer. In an embodiment, the application in step i) is carried out by inkjet printing. The method for inkjet printing MOD ink has low equipment cost and low power consumption; no material waste; on-demand printing and easy selective deposition/design flexibility (no etching required). In addition, the method of the present invention improves the adhesion and electric conductivity of the metallization layer on backside of the wafer.