公开(公告)号：US09864524B2

公开(公告)日：2018-01-09

申请号：US15416813

申请日：2017-01-26

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Paul I. Mikulan ,  Bee Ling Peh

IPC: G11C16/04 ,  G06F3/06 ,  B41J2/045

CPC classification number: G06F3/061 ,  B41J2/04541 ,  B41J2/04581 ,  B41J2/04586 ,  G06F3/0655 ,  G06F3/0688 ,  G11C11/5621 ,  G11C16/0433 ,  G11C16/0458 ,  H01L27/11521 ,  H01L29/7881 ,  H01L29/7887

Abstract: An integrated circuit including a first EPROM, a second EPROM, and a circuit. The first EPROM is configured to provide a first state and a second state. The second EPROM is configured to provide a third state and a fourth state. The circuit is configured to select the first EPROM and the second EPROM individually and in parallel with each other.

公开(公告)号：US20170062449A1

公开(公告)日：2017-03-02

申请号：US15352449

申请日：2016-11-15

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Reynaldo V. Villavelez ,  Paul I. Mikulan

IPC: H01L27/115 ,  H01L29/08 ,  B41J2/045 ,  H01L29/10 ,  H01L29/788 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L27/11524 ,  B41J2/04541 ,  B41J2/04586 ,  G11C16/10 ,  H01L27/11519 ,  H01L27/11521 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/40114 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/7884

Abstract: A memory cell for a printhead includes a substrate with a source and a drain. The substrate further includes a channel located between the source and the drain and surrounding the drain. The drain can include a first rounded closed curved structure. The memory cell can include a floating gate and a control gate. The floating gate can include a second rounded closed curve structure located above the channel and below the control gate. The control gate is capacitively coupled to the floating gate.

Abstract translation: 用于打印头的存储单元包括具有源极和漏极的衬底。 衬底还包括位于源极和漏极之间并且围绕漏极的沟道。 排水管可以包括第一圆形闭合弯曲结构。 存储单元可以包括浮动栅极和控制栅极。 浮动门可以包括位于通道上方和控制门下方的第二圆形闭合曲线结构。 控制栅极电容耦合到浮动栅极。