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公开(公告)号:US20210167118A1
公开(公告)日:2021-06-03
申请号:US17047300
申请日:2018-08-21
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: Ning Ge , Robert Ionescu , Helen A Holder , Jarrid Wittkopf
IPC: H01L27/15 , H01L27/144 , H01L25/065 , H01L25/18
Abstract: A device includes a P-N junction comprising a monolithic N-type semiconductor layer coupled to a monolithic P-type semiconductor layer. The monolithic N-type semiconductor layer includes a first portion and a second portion. The first portion has a first surface and the second portion has a second surface facing away from the first surface. The monolithic P-type semiconductor layer includes a third portion and a fourth portion. The third portion has a third surface and the fourth portion has a fourth surface facing away from the third surface.
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公开(公告)号:US10724959B2
公开(公告)日:2020-07-28
申请号:US15764322
申请日:2015-11-13
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: Ning Ge , Steven Barcelo , Anita Rogacs , Helen A Holder
Abstract: In an example implementation, a substance detection method includes sensing for fluid in a chamber of a substance detection device. When fluid is sensed in the chamber, the method includes sensing again for fluid in the chamber. When no fluid is sensed in the chamber, the method includes initiating a substance detection process.
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公开(公告)号:US11307683B2
公开(公告)日:2022-04-19
申请号:US16075637
申请日:2017-01-31
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor: Jarrid Wittkopf , Robert Ionescu , Ning Ge , Helen A Holder
Abstract: In an example implementation, a touch-sensitive illuminating display includes a transparent flexible touch layer, a transparent top conductive layer adjacent the flexible touch layer, a bottom conductive layer, and an electroluminescent layer and variable-thickness dielectric layer sandwiched between the top and bottom conductive layers. Pressure against the flexible touch layer is to reduce the dielectric layer thickness and bring the top and bottom conductive layers closer together, causing the electroluminescent layer to emit light where the pressure is applied.
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公开(公告)号:US11231687B2
公开(公告)日:2022-01-25
申请号:US16332817
申请日:2016-10-31
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor: Paul Howard Mazurkiewicz , Ning Ge , Helen A Holder
Abstract: A device for detecting isotopes includes an isotope portion including a material including an isotope of an element, a reaction control portion to cause a chemical reaction of the material, and an electrical parameter portion to measure a change in an electrical parameter of the material, where the change in the electrical parameter is caused by the chemical reaction, and where the change in the electrical parameter is dependent on the isotope in the material, to detect the isotope by comparing the change in the electrical parameter of the material with a known electrical parameter associated with a known isotope.
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公开(公告)号:US20180284027A1
公开(公告)日:2018-10-04
申请号:US15764324
申请日:2015-11-13
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: Ning GE , Steven Barcelo , Charles M Santori , Helen A Holder
CPC classification number: G01N21/658 , G01N21/03
Abstract: In an example implementation, a substance detection device includes a substrate having nanoimprinted chamber walls and nanostructures. The chamber walls define a chamber and the nanostructures are positioned within the chamber to react to a substance introduced into the chamber. A two-dimensional (2D) orifice plate is affixed to the chamber walls and forms a top side of the chamber.
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公开(公告)号:US11834739B2
公开(公告)日:2023-12-05
申请号:US17047015
申请日:2018-06-13
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: Robert Ionescu , Helen A Holder , Ning Ge , Jarrid Wittkopf
IPC: C23C16/04 , C01B32/186 , C23C16/26 , C23C16/30 , C23C16/48
CPC classification number: C23C16/047 , C01B32/186 , C23C16/26 , C23C16/305 , C23C16/483 , C23C16/487
Abstract: Graphene printing is disclosed. A disclosed example graphene printing apparatus includes a gas source to cause a graphene precursor gas to flow across a surface of a substrate, and a localized heat source to locally heat portions of the surface to cause graphene to grow at the portions of the surface based on a printing pattern.
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公开(公告)号:US10713548B2
公开(公告)日:2020-07-14
申请号:US16332813
申请日:2016-10-31
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor: Paul Howard Mazurkiewicz , Ning Ge , Helen A Holder
Abstract: An electronic device includes a marker with a pattern of marks encoding product information of the electronic device. The pattern includes first marks having a first material with a first isotopic ratio of an element, and second marks having a second material with a second isotopic ratio of the element different than the first isotopic ratio.
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公开(公告)号:US10648915B2
公开(公告)日:2020-05-12
申请号:US15764327
申请日:2015-11-30
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: Ning Ge , Steven Barcelo , Anita Rogacs , Helen A Holder
Abstract: In an example implementation, a substance detection device includes a chamber with chamber walls, a chamber top, and a chamber bottom. A substrate comprises imprinted nanostructures positioned within the chamber, and the substrate is coupled to the chamber walls to form the chamber bottom. An inert gas is sealed within the chamber.
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公开(公告)号:US10458918B2
公开(公告)日:2019-10-29
申请号:US15764324
申请日:2015-11-13
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: Ning Ge , Steven Barcelo , Charles M Santori , Helen A Holder
Abstract: In an example implementation, a substance detection device includes a substrate having nanoimprinted chamber walls and nanostructures. The chamber walls define a chamber and the nanostructures are positioned within the chamber to react to a substance introduced into the chamber. A two-dimensional (2D) orifice plate is affixed to the chamber walls and forms a top side of the chamber.
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公开(公告)号:US11309349B2
公开(公告)日:2022-04-19
申请号:US17047300
申请日:2018-08-21
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: Ning Ge , Robert Ionescu , Helen A Holder , Jarrid Wittkopf
IPC: H01L27/15 , H01L27/144 , H01L25/065 , H01L25/18
Abstract: A device includes a P-N junction comprising a monolithic N-type semiconductor layer coupled to a monolithic P-type semiconductor layer. The monolithic N-type semiconductor layer includes a first portion and a second portion. The first portion has a first surface and the second portion has a second surface facing away from the first surface. The monolithic P-type semiconductor layer includes a third portion and a fourth portion. The third portion has a third surface and the fourth portion has a fourth surface facing away from the third surface.
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