公开(公告)号：US10605824B2

公开(公告)日：2020-03-31

申请号：US15763240

申请日：2016-03-18

Applicant: Hitachi, Ltd.

Inventor： Shuntaro Machida ,  Nobuyuki Sugii ,  Keiji Watanabe ,  Daisuke Ryuzaki ,  Tetsufumi Kawamura ,  Kazuki Watanabe

IPC: G01P15/08 ,  B81C99/00 ,  G01P15/125

Abstract: For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.

公开(公告)号：US10410826B2

公开(公告)日：2019-09-10

申请号：US16069796

申请日：2016-03-18

Applicant: HITACHI, LTD.

Inventor： Tetsufumi Kawamura ,  Misuzu Sagawa ,  Kazuki Watanabe ,  Keiji Watanabe ,  Shuntaro Machida ,  Nobuyuki Sugii ,  Daisuke Ryuzaki

IPC: H01J37/28 ,  H01J37/302 ,  H01J37/305 ,  H01L21/3065 ,  H01L21/66 ,  B81C1/00

Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.