公开(公告)号：US20190128758A1

公开(公告)日：2019-05-02

申请号：US16094001

申请日：2017-04-13

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Takuya AOYAGI ,  Takashi NAITOU ,  Tatsuya MIYAKE ,  Mizuki SHIBATA ,  Hiroshi ONUKI ,  Daisuke TERADA ,  Shigenobu KOMATSU

IPC: G01L9/00 ,  H01L23/00

CPC classification number: G01L9/0048 ,  G01D21/00 ,  G01L9/00 ,  H01L24/29 ,  H01L24/30 ,  H01L24/33 ,  H01L24/83 ,  H01L29/84 ,  H01L2224/29188 ,  H01L2224/30505 ,  H01L2224/8389

Abstract: Provided is a physical quantity measurement device in which a bonding temperature of a bonding layer is lowered to a temperature not affecting an operation of a semiconductor chip and an insulating property of the semiconductor chip and a base is secured. The physical quantity measurement device includes a base (diaphragm), a semiconductor chip (strain detection element) to measure a physical quantity on the basis of stress acting on the base, and a bonding layer to bond the semiconductor chip to the base. The bonding layer has a first bonding layer bonded to the semiconductor chip, a second bonding layer bonded to the base, and an insulating base material disposed between the first bonding layer and the second bonding layer. The first and second bonding layers and contain glass. A thermal expansion coefficient of the first bonding layer is equal to or lower than a thermal expansion coefficient of the second bonding layer, a softening point of the second bonding layer is equal to or lower than a heat resistant temperature of the semiconductor chip, and a softening point of the first bonding layer is equal to or lower than the softening point of the second bonding layer.

公开(公告)号：US20170038269A1

公开(公告)日：2017-02-09

申请号：US15106898

申请日：2014-11-12

Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.

Inventor： Masayuki HIO ,  Mizuki SHIBATA

IPC: G01L9/00

CPC classification number: G01L9/0048 ,  G01L9/0051

Abstract: Provided is a pressure measuring device that can stably bond a strain detection element even to a diaphragm made of metal having a large coefficient of thermal expansion. In order to achieve the above object, the pressure measuring device of the present invention includes: a metal housing including a pressure introduction unit and a diaphragm deformed by a pressure introduced via the pressure introduction unit; and a strain detection element for detecting strain generated in the diaphragm, wherein a base made of a first brittle material is provided on the metal housing, and the strain detection element is bonded to the base via a second brittle material having a melting point lower than a melting point of the base.

Abstract translation: 提供一种压力测量装置，其可以将应变检测元件甚至稳定地结合到具有大的热膨胀系数的金属制隔膜。 为了实现上述目的，本发明的压力测量装置包括：金属壳体，包括压力引入单元和通过压力引入单元引入的压力而变形的隔膜; 以及用于检测在所述隔膜中产生的应变的应变检测元件，其中，在所述金属壳体上设置由第一脆性材料制成的基底，并且所述应变检测元件经由熔点低于第二脆性材料的第二脆性材料接合到所述基底 碱的熔点。

公开(公告)号：US20180202883A1

公开(公告)日：2018-07-19

申请号：US15742809

申请日：2016-06-30

Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.

Inventor： Hanae SHIMOKAWA ,  Shosaku ISHIHARA ,  Atsuo SOMA ,  Junji ONOZUKA ,  Hiroshi ONUKI ,  Daisuke TERADA ,  Mizuki SHIBATA

IPC: G01L9/00 ,  G01B7/16 ,  H01L23/00

CPC classification number: G01L9/0055 ,  G01B7/16 ,  G01B7/18 ,  G01L9/00 ,  H01L24/29 ,  H01L24/83 ,  H01L29/84 ,  H01L2224/29019 ,  H01L2224/29288 ,  H01L2224/29387 ,  H01L2224/29552 ,  H01L2224/2957 ,  H01L2224/29575 ,  H01L2224/29688 ,  H01L2224/83192 ,  H01L2224/8389

Abstract: A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.