SLURRY AND POLISHING METHOD
    1.
    发明申请

    公开(公告)号:US20200299545A1

    公开(公告)日:2020-09-24

    申请号:US16642120

    申请日:2018-08-30

    IPC分类号: C09G1/02 C09K3/14 H01L21/3105

    摘要: A slurry containing abrasive grains, a liquid medium, and a salt of a compound represented by formula (1) below, in which the abrasive grains include first particles and second particles in contact with the first particles, the first particles contain cerium oxide, and the second particles contain a hydroxide of a tetravalent metal element. [In formula (1), R represents a hydroxyl group or a monovalent organic group.]

    SLURRY, SLURRY SET AND POLISHING METHOD

    公开(公告)号:US20210071037A1

    公开(公告)日:2021-03-11

    申请号:US16981573

    申请日:2019-03-20

    IPC分类号: C09G1/02 H01L21/3105

    摘要: According to an aspect of the present invention, there is provided a polishing liquid containing abrasive grains, a hydroxy acid, a polyol, at least one zwitterionic compound selected from the group consisting of an aminocarboxylic acid and an aminosulfonic acid, and a liquid medium, in which a zeta potential of the abrasive grains is positive, an isoelectric point of the aminocarboxylic acid is smaller than 7.0, and pKa of the aminosulfonic acid is larger than 0.